| Mfr. #: | ULN2003AIN |
|---|---|
| 製造商: | Texas Instruments |
| 描述: | Darlington Transistors HiVltg Hi-Current Darl Trans Array |
| 生命週期: | 製造商新產品 |
| 數據表: | ULN2003AIN 數據表 |
Product belongs to the ULN2003AI series. Tube Alternate Packaging is the packaging method for this product Weight of 0.033570 oz Through Hole Mounting-Style 16-DIP (0.300", 7.62mm) Through Hole mounting type Supplier device package: 16-PDIP Configuration Array 7 Transistor type: 7 NPN Darlington Maximum current collector Ic is 500mA . Maximum collector-emitter breakdown voltage of 50V DC current gain minimum (hFE) of Ic/Vce at -. Product Attribute: Vce-Saturation-Max-Ib-Ic: 1.6V @ 500μA, 350mA Maximum operating temperature of + 105 C Minimum operating temperature: - 40 C Rated VCEO up to 50 V The transistor polarity is NPN. Max DC collector current: 0.5 A
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
ULN2003AIN Specifications
A: At what frequency does the Series?
Q: The product Series is ULN2003AI.
A: At what frequency does the Packaging?
Q: The product Packaging is Tube Alternate Packaging.
A: Is the cutoff frequency of the product Unit-Weight?
Q: Yes, the product's Unit-Weight is indeed 0.033570 oz
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is Through Hole.
A: What is the Package-Case of the product?
Q: The Package-Case of the product is 16-DIP (0.300", 7.62mm).
A: Is the cutoff frequency of the product Mounting-Type?
Q: Yes, the product's Mounting-Type is indeed Through Hole
A: What is the Supplier-Device-Package of the product?
Q: The Supplier-Device-Package of the product is 16-PDIP.
A: What is the Configuration of the product?
Q: The Configuration of the product is Array 7.
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is 7 NPN Darlington.
A: Is the cutoff frequency of the product Current-Collector-Ic-Max?
Q: Yes, the product's Current-Collector-Ic-Max is indeed 500mA
A: Is the cutoff frequency of the product Voltage-Collector-Emitter-Breakdown-Max?
Q: Yes, the product's Voltage-Collector-Emitter-Breakdown-Max is indeed 50V
A: What is the DC-Current-Gain-hFE-Min-Ic-Vce of the product?
Q: The DC-Current-Gain-hFE-Min-Ic-Vce of the product is -.
A: What is the Vce-Saturation-Max-Ib-Ic of the product?
Q: The Vce-Saturation-Max-Ib-Ic of the product is 1.6V @ 500μA, 350mA.
A: Is the cutoff frequency of the product Maximum-Operating-Temperature?
Q: Yes, the product's Maximum-Operating-Temperature is indeed + 105 C
A: What is the Minimum-Operating-Temperature of the product?
Q: The Minimum-Operating-Temperature of the product is - 40 C.
A: At what frequency does the Collector-Emitter-Voltage-VCEO-Max?
Q: The product Collector-Emitter-Voltage-VCEO-Max is 50 V.
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed NPN
A: What is the Maximum-DC-Collector-Current of the product?
Q: The Maximum-DC-Collector-Current of the product is 0.5 A.