IPW60R070P6XKSA1

IPW60R070P6XKSA1
Mfr. #:
IPW60R070P6XKSA1
製造商:
Infineon Technologies
描述:
MOSFET HIGH POWER PRICE/PERFORM
生命週期:
製造商新產品
數據表:
IPW60R070P6XKSA1 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
IPW60R070P6XKSA1 更多信息
產品屬性
屬性值
製造商:
英飛凌
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
通孔
包裝/案例:
TO-247-3
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
600 V
Id - 連續漏極電流:
53.5 A
Rds On - 漏源電阻:
63 mOhms
Vgs th - 柵源閾值電壓:
3.5 V
Vgs - 柵源電壓:
20 V
Qg - 門電荷:
100 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
Pd - 功耗:
391 W
配置:
單身的
頻道模式:
增強
商品名:
酷摩
打包:
管子
高度:
21.1 mm
長度:
16.13 mm
系列:
CoolMOS P6
晶體管類型:
1 N-Channel
寬度:
5.21 mm
品牌:
英飛凌科技
秋季時間:
4 ns
產品類別:
MOSFET
上升時間:
15 ns
出廠包裝數量:
240
子類別:
MOSFET
典型關斷延遲時間:
64 ns
典型的開啟延遲時間:
23 ns
第 # 部分別名:
IPW60R070P6 SP001114660
單位重量:
1.340411 oz
Tags
IPW60R070P, IPW60R070, IPW60R07, IPW60R0, IPW60, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 600 V 53.5 A 70 mO 100 nC CoolMOS P6 Power Transistor - TO-247
***ark
Mosfet, N-Ch, 600V, 53.5A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:53.5A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.063Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ineon
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
型號 製造商 描述 庫存 價格
IPW60R070P6XKSA1
DISTI # V99:2348_06376914
Infineon Technologies AGTrans MOSFET N-CH 600V 53.5A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
94
  • 500:$4.0610
  • 250:$4.5030
  • 100:$4.7620
  • 25:$5.6360
  • 10:$5.9120
  • 1:$7.1863
IPW60R070P6XKSA1
DISTI # V36:1790_06376914
Infineon Technologies AGTrans MOSFET N-CH 600V 53.5A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
0
    IPW60R070P6XKSA1
    DISTI # IPW60R070P6XKSA1-ND
    Infineon Technologies AGMOSFET N-CH 600V 53.5A TO247-3
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    327In Stock
    • 720:$4.7143
    • 240:$5.4139
    • 25:$6.2352
    • 10:$6.5390
    • 1:$7.2400
    IPW60R070P6XKSA1
    DISTI # 30309769
    Infineon Technologies AGTrans MOSFET N-CH 600V 53.5A 3-Pin(3+Tab) TO-247 Tube
    RoHS: Compliant
    489
    • 500:$4.2372
    • 250:$4.6530
    • 100:$4.8708
    • 25:$5.6034
    • 10:$5.8806
    • 3:$6.5043
    IPW60R070P6XKSA1
    DISTI # 29518171
    Infineon Technologies AGTrans MOSFET N-CH 600V 53.5A 3-Pin(3+Tab) TO-247 Tube
    RoHS: Compliant
    94
    • 500:$4.0610
    • 250:$4.5030
    • 100:$4.7620
    • 25:$5.6360
    • 10:$5.9120
    • 2:$6.5330
    IPW60R070P6XKSA1
    DISTI # SP001114660
    Infineon Technologies AGTrans MOSFET N-CH 650V 53.5A 3-Pin TO-247 Tube (Alt: SP001114660)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    Europe - 240
    • 1000:€2.9900
    • 500:€3.1900
    • 100:€3.3900
    • 50:€3.4900
    • 25:€3.5900
    • 10:€3.7900
    • 1:€4.0900
    IPW60R070P6XKSA1
    DISTI # IPW60R070P6XKSA1
    Infineon Technologies AGTrans MOSFET N-CH 650V 53.5A 3-Pin TO-247 Tube - Rail/Tube (Alt: IPW60R070P6XKSA1)
    RoHS: Compliant
    Min Qty: 240
    Container: Tube
    Americas - 0
    • 1440:$3.4900
    • 2400:$3.4900
    • 960:$3.6900
    • 480:$3.7900
    • 240:$3.8900
    IPW60R070P6XKSA1
    DISTI # IPW60R070P6
    Infineon Technologies AGTrans MOSFET N-CH 650V 53.5A 3-Pin TO-247 Tube (Alt: IPW60R070P6)
    RoHS: Compliant
    Min Qty: 240
    Container: Tube
    Asia - 0
      IPW60R070P6XKSA1
      DISTI # 12AC9734
      Infineon Technologies AGMOSFET, N-CH, 600V, 53.5A, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:53.5A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.063ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes163
      • 100:$5.7400
      • 50:$6.1300
      • 25:$6.5100
      • 10:$6.8000
      • 1:$7.4600
      IPW60R070P6XKSA1
      DISTI # 726-IPW60R070P6XKSA1
      Infineon Technologies AGMOSFET HIGH POWER PRICE/PERFORM
      RoHS: Compliant
      1599
      • 1:$6.5700
      • 10:$5.9400
      • 25:$5.6600
      • 100:$4.9200
      • 250:$4.7000
      • 500:$4.2800
      IPW60R070P6
      DISTI # 726-IPW60R070P6
      Infineon Technologies AGMOSFET HIGH POWER PRICE/PERFORM
      RoHS: Compliant
      1694
      • 1:$6.5700
      • 10:$5.9400
      • 25:$5.6600
      • 100:$4.9200
      • 250:$4.7000
      • 500:$4.2800
      IPW60R070P6XKSA1
      DISTI # IPW60R070P6XKSA1
      Infineon Technologies AGTransistor: N-MOSFET,unipolar,600V,53.5A,391W,PG-TO247-3224
      • 1:$6.1000
      • 3:$5.3900
      • 10:$4.8400
      • 30:$4.5100
      IPW60R070P6XKSA1
      DISTI # 2709900
      Infineon Technologies AGMOSFET, N-CH, 600V, 53.5A, TO-247
      RoHS: Compliant
      163
      • 1200:$6.2300
      • 720:$7.1600
      • 240:$8.5300
      • 10:$10.3800
      • 1:$11.5200
      IPW60R070P6XKSA1
      DISTI # 2709900
      Infineon Technologies AGMOSFET, N-CH, 600V, 53.5A, TO-247165
      • 500:£3.3800
      • 250:£3.7100
      • 100:£3.8900
      • 10:£4.4700
      • 1:£5.7200
      IPW60R070P6XKSA1
      DISTI # XSKDRABV0021280
      Infineon Technologies AG 
      RoHS: Compliant
      720 in Stock0 on Order
      • 720:$5.8320
      • 240:$6.2520
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      MOSFET N-channel 600 V, 0.085 Ohm typ., 30 A MDmesh M6 Power MOSFET in a TO-220 package
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      Gate Drivers Hi&Lw Sd Drvr All HiVlt Pins 1 Sd
      ALA7DA681DF450

      Mfr.#: ALA7DA681DF450

      OMO.#: OMO-ALA7DA681DF450-KEMET

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      IPW60R060C7XKSA1

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      OMO.#: OMO-IPW60R060C7XKSA1-INFINEON-TECHNOLOGIES

      MOSFET N-CH 600V 35A TO247
      可用性
      庫存:
      Available
      訂購:
      1984
      輸入數量:
      IPW60R070P6XKSA1的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
      參考價格(美元)
      數量
      單價
      小計金額
      1
      US$6.57
      US$6.57
      10
      US$5.94
      US$59.40
      25
      US$5.66
      US$141.50
      100
      US$4.92
      US$492.00
      250
      US$4.70
      US$1 175.00
      500
      US$4.28
      US$2 140.00
      由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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