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SI4834CDY-T1-E3

SI4834CDY-T1-E3
Mfr. #:
SI4834CDY-T1-E3
製造商:
Vishay
描述:
RF Bipolar Transistors MOSFET 30V 8.0A 2.9W 20mohm @ 10V
生命週期:
製造商新產品
數據表:
SI4834CDY-T1-E3 數據表
交貨:
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支付:
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HTML Datasheet:
SI4834CDY-T1-E3 DatasheetSI4834CDY-T1-E3 Datasheet (P4-P6)SI4834CDY-T1-E3 Datasheet (P7-P9)SI4834CDY-T1-E3 Datasheet (P10-P12)SI4834CDY-T1-E3 Datasheet (P13-P15)
ECAD Model:
產品屬性
屬性值
製造商
威世矽
產品分類
FET - 陣列
系列
溝槽FETR
打包
捲帶 (TR)
部分別名
SI4834CDY-E3
單位重量
0.006596 oz
安裝方式
貼片/貼片
包裝盒
8-SOIC (0.154", 3.90mm Width)
技術
矽
工作溫度
-55°C ~ 150°C (TJ)
安裝型
表面貼裝
通道數
2 Channel
供應商-設備-包
8-SO
配置
雙路肖特基二極管
FET型
2 N-Channel (Dual)
最大功率
2.9W
晶體管型
2 N-Channel
漏源電壓 Vdss
30V
輸入電容-Ciss-Vds
950pF @ 15V
FET-Feature
標準
Current-Continuous-Drain-Id-25°C
8A
Rds-On-Max-Id-Vgs
20 mOhm @ 8A, 10V
Vgs-th-Max-Id
3V @ 1mA
柵極電荷-Qg-Vgs
25nC @ 10V
鈀功耗
2 W
最高工作溫度
+ 150 C
最低工作溫度
- 55 C
秋季時間
10 ns
上升時間
12 ns
VGS-柵極-源極-電壓
20 V
Id 連續漏極電流
7.5 A
Vds-漏-源-擊穿電壓
30 V
Rds-On-Drain-Source-Resistance
20 mOhms
晶體管極性
N通道
典型關斷延遲時間
19 ns 18 ns
典型開啟延遲時間
17 ns
通道模式
增強
Tags
SI4834C, SI4834, SI483, SI48, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 30V 7.5A 8-Pin SOIC N T/R
***ark
Transistor; Continuous Drain Current, Id:8000mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.025ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:3V; Power Dissipation, Pd:2W ;RoHS Compliant: Yes
***nell
MOSFET, N, SO-8; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:7.5A; On State Resistance:0.022ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:SOIC; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C; Max Junction Temperature, Tj:150°C; Power Dissipation Pd:1.1W; Rise Time:10ns; Voltage, Vgs th Max:3V; Voltage, Vgs th Min:0.8V
型號 製造商 描述 庫存 價格
SI4834CDY-T1-E3
DISTI # SI4834CDY-T1-E3-ND		Vishay SiliconixMOSFET 2N-CH 30V 8A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
  • 2500:$0.5390
SI4834CDY-T1-E3
DISTI # 781-SI4834CDY-E3		Vishay IntertechnologiesMOSFET 30V 8.0A 2.9W 20mohm @ 10V
RoHS: Compliant		0
  • 1:$1.2300
  • 10:$1.0100
  • 100:$0.7740
  • 500:$0.6660
  • 1000:$0.5840
SI4834CDY-T1-E3Vishay IntertechnologiesMOSFET 30V 8.0A 2.9W 20mohm @ 10V
RoHS: Compliant		Americas -
    圖片 型號 描述
    SI4834CDY-T1-GE3

    Mfr.#: SI4834CDY-T1-GE3

    OMO.#: OMO-SI4834CDY-T1-GE3

    		 MOSFET RECOMMENDED ALT 781-SI4816BDY-T1-GE3
    SI4834CDY-T1-GE3

    Mfr.#: SI4834CDY-T1-GE3

    OMO.#: OMO-SI4834CDY-T1-GE3-VISHAY

    		 IGBT Transistors MOSFET 30V 8A / 8A DUAL NCH MOSFET w/Shottky
    SI4834CDY-T1-E3

    Mfr.#: SI4834CDY-T1-E3

    OMO.#: OMO-SI4834CDY-T1-E3-VISHAY

    		 RF Bipolar Transistors MOSFET 30V 8.0A 2.9W 20mohm @ 10V
    SI4834CDY

    Mfr.#: SI4834CDY

    OMO.#: OMO-SI4834CDY-1190

    		 全新原裝
    可用性
    庫存:
    Available
    訂購:
    3500
    輸入數量:
    SI4834CDY-T1-E3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$0.81
    US$0.81
    10
    US$0.77
    US$7.68
    100
    US$0.73
    US$72.77
    500
    US$0.69
    US$343.60
    1000
    US$0.65
    US$646.80
    從...開始
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