IS66WVC4M16EALL-7010BLI

Mfr. #:: IS66WVC4M16EALL-7010BLI
製造商:: ISSI
描述:: DRAM Pseudo SRAM 64Mb
生命週期:: 製造商新產品
數據表:: IS66WVC4M16EALL-7010BLI 數據表
交貨:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:: IS66WVC4M16EALL-7010BLI 更多信息

產品屬性
屬性值

製造商：: 國際空間站

產品分類：: 動態隨機存取存儲器

RoHS：: Y

類型：: PSRAM（偽SRAM）

數據總線寬度：: 16 bit

組織：: 4 M x 16

包裝/案例：: VFBGA-54

內存大小：: 64 Mbit

最大時鐘頻率：: 104 MHz

訪問時間：: 70 ns

電源電壓 - 最大值：: 1.95 V

電源電壓 - 最小值：: 1.7 V

電源電流 - 最大值：: 30 mA

最低工作溫度：: - 40 C

最高工作溫度：: + 85 C

系列：: IS66WVC4M16EALL

品牌：: 國際空間站

安裝方式：: 貼片/貼片

濕氣敏感：: 是的

產品類別：: 動態隨機存取存儲器

出廠包裝數量：: 480

子類別：: 內存和數據存儲

單位重量：: 0.003034 oz

Tags: IS66WVC4M16EA, IS66WVC4M16E, IS66WVC4, IS66WVC, IS66WV, IS66W, IS66, IS6

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IS66WVC4M16EALL-7010BLI 評級和評論

N***V

All ok.

2019-07-11

I***v

The goods are received on time and in good quality.Long live the communist party of china!Goods received on time and in good quality.Long live the chinese communist party!

2019-05-29

IS66WVC4M16EALL-7010BLI 描述

***: PSRAM (Pseudo SRAM) Memory IC 64Mb (4M x 16) Parallel 7 ns 54-VFBGA (6x8)

***I SCT: Cellular RAM Pseudo SRAM, 4Mx16, 1.7 to 1.95V, 70ns, VFBGA-54

***ical: PSRAM Async Single Port 64M-bit 4M x 16 70ns 54-Pin VFBGA

***ark: 64Mb,Pseudo SRAM,Asynch/Page/Burst CRAM 1.5,4M x 16,70ns,1.7v

***i-Key: IC PSRAM 64MBIT PARALLEL 54VFBGA

IS66WVC4M16EALL-7010BLI 更多信息

Pseudo SRAM/CellularRAM: ISSI Pseudo SRAM/CellularRAM Devices offer the best of both DRAM and SRAM features. ISSI PSRAM/CellularRAM has a SRAM-like architecture. Unlike DRAM, there is a hidden re-fresh feature which does not require physical refresh. These CellularRAM devics are designed in accordance to the CellularRAM standards and are available in CRAM 1.5 and CRAM 2.0.

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