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FDD3N50NZTM

FDD3N50NZTM
Mfr. #:
FDD3N50NZTM
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET UNIFET2 500V
生命週期:
製造商新產品
數據表:
FDD3N50NZTM 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
TO-252-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
500 V
Id - 連續漏極電流：
2.5 A
Rds On - 漏源電阻：
2.1 Ohms
Vgs th - 柵源閾值電壓：
5 V
Vgs - 柵源電壓：
25 V
Qg - 門電荷：
6.2 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
40 W
配置：
單身的
打包：
捲軸
高度：
2.39 mm
長度：
6.73 mm
系列：
FDD3N50NZ
晶體管類型：
1 N-Channel
寬度：
6.22 mm
品牌：
安森美半導體/飛兆半導體
正向跨導 - 最小值：
1.9 S
秋季時間：
17 ns
產品類別：
MOSFET
上升時間：
15 ns
出廠包裝數量：
2500
子類別：
MOSFET
典型關斷延遲時間：
26 ns
典型的開啟延遲時間：
10 ns
單位重量：
0.009184 oz
Tags
FDD3N, FDD3, FDD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, UniFETTM II, 500 V, 3 A, 2.5 Ω, DPAK
***el Electronic
Transistor: N-MOSFET; unipolar; 500V; 2.5A; 40W; DPAK; UniFET™
*** Source Electronics
MOSFET N-CH 500V DPAK / Trans MOSFET N-CH 500V 2.5A 3-Pin(2+Tab) DPAK T/R
*** Stop Electro
Power Field-Effect Transistor, 2.5A I(D), 500V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***rchild Semiconductor
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts..
***emi
UniFETTM Ultra FRFETTM MOSFET, N-Channel, 500 V, 3 A, 2 Ω, DPAK
***r Electronics
Power Field-Effect Transistor, 3A I(D), 500V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. UniFET Ultra FRFETTM MOSFET has much superior body diode reverse recovery performance. Its trr is less than 50nsec and the reverse dv/dt immunity is 20V/nsec while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore UniFET Ultra FRFET MOSFET can remove additional component and improve system reliability in certain applications that require performance improvement of the MOSFET’s body diode. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***roFlash
Mosfet Transistor, N Channel, 3 A, 500 V, 2.3 Ohm, 10 V, 3.75 V Rohs Compliant: Yes
***icroelectronics
N-CHANNEL 500V - 2.4 Ohm - 3A DPAK Zener-Protected SuperMESH(TM) PowerMOSFET
*** Source Electronics
MOSFET N-CH 500V 3A DPAK / Trans MOSFET N-CH 500V 3A 3-Pin(2+Tab) DPAK T/R
***ure Electronics
N-Channel 500 V 2.7 Ohm Surface Mount SuperMESH™ Power MosFet - TO-252-3
***r Electronics
Power Field-Effect Transistor, 3A I(D), 500V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ment14 APAC
MOSFET, N-CH, 500V, 3A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Source Voltage Vds:500V; On Resistance
***nell
MOSFET, N-CH, 500V, 3A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 3A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 2.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 45W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C
***(Formerly Allied Electronics)
IRFR320TRPBF N-channel MOSFET Transistor; 3.1 A; 400 V; 3-Pin TO-252
***ure Electronics
Single N-Channel 400 V 1.8 Ohms Surface Mount Power Mosfet - TO-252
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ure Electronics
Single N-Channel 400 V 1.8 Ohms Surface Mount Power Mosfet - TO-252
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:3.1A; On Resistance Rds(On):1.8Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Product Range:- Rohs Compliant: No
***ment14 APAC
MOSFET, N, 400V, 3.1A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:3.1A; Drain Source Voltage Vds:400V; On Resistance Rds(on):1.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:3.1A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3°C/W; Package / Case:DPAK; Power Dissipation Pd:42W; Power Dissipation Pd:42W; Pulse Current Idm:12A; SMD Marking:IRFR320; Termination Type:SMD; Voltage Vds:400V; Voltage Vds Typ:400V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ical
Trans MOSFET N-CH 500V 2.6A 3-Pin(2+Tab) DPAK T/R
***ser
MOSFETs 500V N-Channel QFET
***el Nordic
Contact for details
***rchild Semiconductor
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.
***ure Electronics
Single N-Channel 500 V 3 O 19 nC Surface Mount Power Mosfet - TO-252 (DPAK)
***ical
Trans MOSFET N-CH 500V 2.4A 3-Pin(2+Tab) DPAK T/R
***S
French Electronic Distributor since 1988
型號 製造商 描述 庫存 價格
FDD3N50NZTM
DISTI # V72:2272_06337837		ON SemiconductorUNIFET2 500V2097
  • 1000:$0.3350
  • 500:$0.3598
  • 250:$0.3997
  • 100:$0.4442
  • 25:$0.6162
  • 10:$0.7531
  • 1:$0.9021
FDD3N50NZTM
DISTI # V36:1790_06337837		ON SemiconductorUNIFET2 500V0
  • 2500000:$0.2705
  • 1250000:$0.2708
  • 250000:$0.2935
  • 25000:$0.3332
  • 2500:$0.3398
FDD3N50NZTM
DISTI # FDD3N50NZTMCT-ND		ON SemiconductorMOSFET N-CH 500V DPAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2279In Stock
  • 1000:$0.3862
  • 500:$0.4828
  • 100:$0.6107
  • 10:$0.7970
  • 1:$0.9100
FDD3N50NZTM
DISTI # FDD3N50NZTMDKR-ND		ON SemiconductorMOSFET N-CH 500V DPAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2279In Stock
  • 1000:$0.3862
  • 500:$0.4828
  • 100:$0.6107
  • 10:$0.7970
  • 1:$0.9100
FDD3N50NZTM
DISTI # FDD3N50NZTMTR-ND		ON SemiconductorMOSFET N-CH 500V DPAK
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 25000:$0.2969
  • 12500:$0.3047
  • 5000:$0.3164
  • 2500:$0.3398
FDD3N50NZTM
DISTI # 29437824		ON SemiconductorUNIFET2 500V5000
  • 2500:$0.2978
FDD3N50NZTM
DISTI # 27482689		ON SemiconductorUNIFET2 500V2097
  • 23:$0.9021
FDD3N50NZTM
DISTI # FDD3N50NZTM		ON SemiconductorTrans MOSFET N-CH 500V 2.5A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FDD3N50NZTM)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.2749
  • 15000:$0.2819
  • 10000:$0.2859
  • 5000:$0.2889
  • 2500:$0.2909
FDD3N50NZTM
DISTI # FDD3N50NZTM		ON SemiconductorTrans MOSFET N-CH 500V 2.5A 3-Pin(2+Tab) DPAK T/R - Bulk (Alt: FDD3N50NZTM)
Min Qty: 863
Container: Bulk		Americas - 0
  • 8630:$0.3579
  • 4315:$0.3669
  • 2589:$0.3709
  • 1726:$0.3759
  • 863:$0.3789
FDD3N50NZTM
DISTI # FDD3N50NZTM		ON SemiconductorTrans MOSFET N-CH 500V 2.5A 3-Pin(2+Tab) DPAK T/R (Alt: FDD3N50NZTM)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 25000:€0.2769
  • 15000:€0.2979
  • 10000:€0.3229
  • 5000:€0.3519
  • 2500:€0.4309
FDD3N50NZTM
DISTI # 92R5521		ON SemiconductorUF2 500V 2.5OHM DPAK / REEL0
  • 25000:$0.3350
  • 10000:$0.3450
  • 2500:$0.3570
  • 1:$0.3600
FDD3N50NZTM
DISTI # 512-FDD3N50NZTM		ON SemiconductorMOSFET UNIFET2 500V
RoHS: Compliant		4261
  • 1:$0.8300
  • 10:$0.6910
  • 100:$0.4460
  • 1000:$0.3570
  • 2500:$0.3190
FDD3N50NZTMFairchild Semiconductor CorporationPower Field-Effect Transistor, 2.5A I(D), 500V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
RoHS: Compliant		17500
  • 1000:$0.3300
  • 500:$0.3500
  • 100:$0.3600
  • 25:$0.3800
  • 1:$0.4100
FDD3N50NZTM
DISTI # 7396171P		ON SemiconductorMOSFET N CHANNEL 500V 2.5A DPAK, RL1055
  • 25:£0.2420
FDD3N50NZTM
DISTI # FDD3N50NZTM		ON SemiconductorTransistor: N-MOSFET,unipolar,500V,2.5A,40W,DPAK2414
  • 500:$0.4700
  • 100:$0.5100
  • 25:$0.5600
  • 5:$0.6400
  • 1:$0.7100
FDD3N50NZTMFairchild Semiconductor CorporationPower Field-Effect Transistor, 2.5A I(D), 500V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
RoHS: Compliant		2500
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    可用性
    庫存:
    Available
    訂購:
    1987
    輸入數量:
    FDD3N50NZTM的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$0.83
    US$0.83
    10
    US$0.69
    US$6.91
    100
    US$0.45
    US$44.60
    1000
    US$0.36
    US$357.00
    由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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