GS8161E36DD-250

GS8161E36DD-250
Mfr. #:
GS8161E36DD-250
製造商:
GSI Technology
描述:
SRAM 2.5 or 3.3V 512K x 36 18M
生命週期:
製造商新產品
數據表:
GS8161E36DD-250 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
GS8161E36DD-250 更多信息
產品屬性
屬性值
製造商:
GSI技術
產品分類:
靜態隨機存取存儲器
打包:
托盤
系列:
GS8161E36DD
品牌:
GSI技術
濕氣敏感:
是的
產品類別:
靜態隨機存取存儲器
出廠包裝數量:
36
子類別:
內存和數據存儲
商品名:
同步突發
Tags
GS8161E36DD-25, GS8161E36DD-2, GS8161E36DD, GS8161E36, GS8161E3, GS8161E, GS8161, GS816, GS81, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
SRAM Chip Sync Quad 2.5V/3.3V 18M-Bit 512K x 36 5.5ns/2.5ns 165-Pin FBGA
***et
SRAM Chip Sync Dual 1.8V 18M-Bit 2M x 9-Bit 0.45ns 165-Pin FBGA Tray
***-Wing Technology
e0 Surface Mount CY7C1911 Tray ic memory 250MHz 450ps 15mm 430mA
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***or
QDR SRAM, 2MX9, 0.45NS, CMOS, PB
***et
SRAM Chip Sync Single 1.8V 18M-Bit 512K x 36 0.45ns 165-Pin FBGA Tray
***-Wing Technology
e0 Surface Mount CY7C1321 Tray ic memory 250MHz 450ps 370mA 18Mb
***ress Semiconductor SCT
DDR-II CIO, 18 Mbit Density, BGA-165
*** Services
CoC and 2-years warranty / RFQ for pricing
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***or
DDR SRAM, 512KX36, 0.45NS, CMOS,
***et
SRAM Chip Sync Single 1.8V 18M-Bit 512K x 36 0.45ns 165-Pin FBGA Tray
***-Wing Technology
e1 Surface Mount CY7C1321 Tray ic memory 250MHz 450ps 370mA 18Mb
***ress Semiconductor SCT
DDR-II CIO, 18 Mbit Density, BGA-165, RoHS
***DA Technology Co., Ltd.
Product Description Demo for Development.
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
SyncBurst SRAMs
GSI Technology SyncBurst SRAMs are a broad portfolio of Synchronous Burst (SyncBurst™) SRAMs with fast clock rates and low power. SyncBurst SRAMs provide a "burst" of (typically) 2 to 4 words in response to a single clock signal. The devices' simplified interface is designed to use a data bus's maximum bandwidth. SyncBurst SRAMs are used in military, networking, industrial, automotive and medical imaging applications where a mid-range performance point is required.Learn More
圖片 型號 描述
GS8161E36DD-250

Mfr.#: GS8161E36DD-250

OMO.#: OMO-GS8161E36DD-250

SRAM 2.5 or 3.3V 512K x 36 18M
GS8161E18DGD-150

Mfr.#: GS8161E18DGD-150

OMO.#: OMO-GS8161E18DGD-150

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161E32DGT-150V

Mfr.#: GS8161E32DGT-150V

OMO.#: OMO-GS8161E32DGT-150V

SRAM 1.8/2.5V 512K x 32 16M
GS8161E32DGT-150

Mfr.#: GS8161E32DGT-150

OMO.#: OMO-GS8161E32DGT-150

SRAM 2.5 or 3.3V 512K x 32 16M
GS8161E32DGT-250

Mfr.#: GS8161E32DGT-250

OMO.#: OMO-GS8161E32DGT-250

SRAM 2.5 or 3.3V 512K x 32 16M
GS8161E18DGD-150I

Mfr.#: GS8161E18DGD-150I

OMO.#: OMO-GS8161E18DGD-150I

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161E36DGT-333

Mfr.#: GS8161E36DGT-333

OMO.#: OMO-GS8161E36DGT-333

SRAM 2.5 or 3.3V 512K x 36 18M
GS8161E18DGT-333

Mfr.#: GS8161E18DGT-333

OMO.#: OMO-GS8161E18DGT-333

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161E18DGD-150IV

Mfr.#: GS8161E18DGD-150IV

OMO.#: OMO-GS8161E18DGD-150IV

SRAM 1.8/2.5V 1M x 18 18M
GS8161E18DGT-375I

Mfr.#: GS8161E18DGT-375I

OMO.#: OMO-GS8161E18DGT-375I

SRAM 2.5 or 3.3V 1M x 18 18M
可用性
庫存:
Available
訂購:
5000
輸入數量:
GS8161E36DD-250的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$14.46
US$14.46
25
US$13.43
US$335.75
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