FDMD8680

Mfr. #:: FDMD8680
製造商:: ON Semiconductor / Fairchild
描述:: MOSFET 80V Dual N Chnl PowerTrench MOSFET
生命週期:: 製造商新產品
數據表:: FDMD8680 數據表
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ECAD Model:

產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: Power-33-8

商品名：: 動力戰壕

打包：: 捲軸

高度：: 0.8 mm

長度：: 3.3 mm

系列：: FDMD8680

寬度：: 3.3 mm

品牌：: 安森美半導體/飛兆半導體

產品類別：: MOSFET

出廠包裝數量：: 3000

子類別：: MOSFET

單位重量：: 0.003455 oz

Tags: FDMD86, FDMD, FDM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDMD8680 描述

***emi: Dual N-Channel PowerTrench® MOSFET 60V, 66A, 4.7mΩ

***ure Electronics: Dual N-Channel PowerTrench MOSFET, 80V, 66A. 8-PQFN PACK

***r Electronics: Power Field-Effect Transistor, 66A I(D), 80V, 0.0047ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***rchild Semiconductor: This package integrates two N-Channel devices connected internally in common-source configuration. This enables very low package parasitics and optimized thermal path to the common source pad on the bottom. Provides a very small footprint (5 x 6 mm) for higher power density.

***ark: MOSFET Transistor, N Channel, 80 A, 80 V, 0.0095 ohm, 10 V, 3 V

***ure Electronics: N-Channel 80 V 80 A 11 mOhm Surface Mount StripFET II Power Mosfet - D2PAK

***ical: Trans MOSFET N-CH 80V 80A 3-Pin(2+Tab) D2PAK T/R

***r Electronics: Power Field-Effect Transistor, 80A I(D), 80V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, N-CH, 80V, 80A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0095ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 300W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C

***ure Electronics: Single N-Channel 80 V 5.4 mOhm 52 nC OptiMOS Power Mosfet - D2PAK

***ow.cn: Trans MOSFET N-CH 80V 80A Automotive 3-Pin(2+Tab) D2PAK T/R

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 80A I(D), 80V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ment14 APAC: MOSFET, N CH, 80A, 80V, PG-TO263-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:80V; On Resistance Rds(on):4.6mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:150W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; Current Id Max:80A; Power Dissipation Pd:150W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon: OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). | Summary of Features: Optimized technology for DC-DC converters; Excellent gate charge x R DS(ON) product (FOM); Superior thermal resistance; Dual sided cooling; Low parasitic inductance; Low profile (<0,7mm); N-channel, normal level; 100% avalanche tested; Pb-free plating; RoHS compliant | Target Applications: Solar; Consumer; Telecom; Server; PC power; DC-DC; AC-DC; Adapter; SMPS; LED; Motor control

***ical: Trans MOSFET N-CH 80V 80A 3-Pin(2+Tab) D2PAK

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 1.6pF 100volts C0G +/-0.25pF

***ment14 APAC: MOSFET, N CH, 80A, 80V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:80V; On Resistance Rds(on):5.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:136W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:80A; Power Dissipation Pd:136W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon: OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). | Summary of Features: Optimized technology for DC-DC converters; Excellent gate charge x R DS(ON) product (FOM); Superior thermal resistance; Dual sided cooling; Low parasitic inductance; Low profile (<0,7mm); N-channel, normal level; 100% avalanche tested; Pb-free plating; RoHS compliant | Target Applications: Solar; Consumer; Telecom; Server; PC power; DC-DC; AC-DC; Adapter; SMPS; LED; Motor control

***ark: MOSFET, N CH, 80V, 0.0026OHM, 76A, POWER 56-8; Transistor Polarity:N Channel; Co

***emi: N-Channel PowerTrench® MOSFET, Dual CoolTM 56, 80V, 110A, 3.1mΩ

***ure Electronics: Dual N-Channel 80 V 5 mOhm 84 nC 125 W PowerTrench SMT Mosfet - PQFN-8

*** Stop Electro: Power Field-Effect Transistor, 24A I(D), 80V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.

***nell: MOSFET, N CH, 80V, 76A, POWER 56-8; Transistor Polarity:N Channel; Continuous Drain Current Id:76A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.3V; Power Dissipation Pd:125W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:-; SVHC:No SVHC (20-Jun-2013)

***icroelectronics: N-Channel 100V - 0.012Ohm - 80A - D2PAK LOW GATE CHARGE STripFET(TM) MOSFET

***ure Electronics: N-Channel 100 V 0.015 O 135 nC Surface Mount STripFET II Power MosFet- D2PAK

***ical: Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R

***r Electronics: Power Field-Effect Transistor, 80A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ment14 APAC: MOSFET, N CH, 100V, 80A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:100V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:80A; Package / Case:D2-PAK; Power Dissipation Pd:300W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***icroelectronics: N-channel 100V - 0.019Y - 80A - TO-220 - D2PAK - I2PAK

***et: Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R

***ure Electronics: N-Channel 100 V 0.023 O Surface Mount STripFET II Power MosFet - D2PAK

***r Electronics: Power Field-Effect Transistor, 80A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, N CH, 100V, 80A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.019ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power

Market price

型號	製造商	描述	庫存	價格
FDMD8680 DISTI # V79:2366_23246347	ON Semiconductor	80V DUAL N-CHANNEL POWERTRENCH	1500	9000:$0.9697 6000:$0.9986 3000:$1.0327 1000:$1.0814 500:$1.2889 100:$1.4902 10:$2.0882 1:$2.7625
FDMD8680 DISTI # V72:2272_16917425	ON Semiconductor	80V DUAL N-CHANNEL POWERTRENCH	1480	1000:$1.1126 500:$1.2652 250:$1.4258 100:$1.4788 25:$1.7710 10:$1.9678 1:$2.7743
FDMD8680 DISTI # V36:1790_16917425	ON Semiconductor	80V DUAL N-CHANNEL POWERTRENCH	0	3000000:$1.0110 1500000:$1.0120 300000:$1.0920 30000:$1.2110 3000:$1.2300
FDMD8680 DISTI # FDMD8680OSTR-ND	ON Semiconductor	MOSFET 2 N-CH 80V 66A 8-PQFN RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	6000:$1.1845 3000:$1.2301
FDMD8680 DISTI # FDMD8680OSCT-ND	ON Semiconductor	MOSFET 2 N-CH 80V 66A 8-PQFN RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$1.3609 500:$1.6424 100:$1.9991 10:$2.4870 1:$2.7700
FDMD8680 DISTI # FDMD8680OSDKR-ND	ON Semiconductor	MOSFET 2 N-CH 80V 66A 8-PQFN RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$1.3609 500:$1.6424 100:$1.9991 10:$2.4870 1:$2.7700
FDMD8680 DISTI # 32380432	ON Semiconductor	80V DUAL N-CHANNEL POWERTRENCH	1500	8:$2.7625
FDMD8680 DISTI # 25924843	ON Semiconductor	80V DUAL N-CHANNEL POWERTRENCH	1480	6:$2.7743
FDMD8680 DISTI # FDMD8680	ON Semiconductor	Dual N-Channel PowerTrench MOSFET 80V Drain to Source Voltage 66A Continuous Drain Current 39W Power Dissipation Surface Mount 8-Pin PQFN T/R - Tape and Reel (Alt: FDMD8680) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$1.0709 18000:$1.0979 12000:$1.1119 6000:$1.1269 3000:$1.1339
FDMD8680 DISTI # 96Y9209	ON Semiconductor	MOSFET, DUAL N-CH, 80V, 66A, PQFN-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:66A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0033ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes	2549	1000:$1.0100 500:$1.1700 250:$1.2600 100:$1.3400 50:$1.4500 25:$1.5700 10:$1.6800 1:$1.9700
FDMD8680 DISTI # 512-FDMD8680	ON Semiconductor	MOSFET 80V Dual N Chnl PowerTrench MOSFET RoHS: Compliant	759	1:$2.5500 10:$2.1700 100:$1.7300 500:$1.5100 1000:$1.2500 3000:$1.1700 6000:$1.1200
FDMD8680 DISTI # 2617742	ON Semiconductor	MOSFET, DUAL N-CH, 80V, 66A, PQFN-8	2549	500:£0.7940 250:£0.8510 100:£0.9090 10:£1.1700 1:£1.5200
FDMD8680 DISTI # 2617742	ON Semiconductor	MOSFET, DUAL N-CH, 80V, 66A, PQFN-8 RoHS: Compliant	2549	100:$3.3800 10:$4.2100 1:$4.6600

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