NIMD6001ANR2G

Mfr. #:: NIMD6001ANR2G
製造商:: ON Semiconductor
描述:: RF Bipolar Transistors MOSFET 60V 3.3A 130 MOHM DUAL
生命週期:: 製造商新產品
數據表:: NIMD6001ANR2G 數據表
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HTML Datasheet:: NIMD6001ANR2G Datasheet NIMD6001ANR2G Datasheet (P4-P6)NIMD6001ANR2G Datasheet (P7-P9)
ECAD Model:

產品屬性
屬性值

製造商: 安森美半導體

產品分類: PMIC - 配電開關、負載驅動器

系列: NIMD6001A

打包: 捲帶 (TR)

單位重量: 0.019048 oz

安裝方式: 貼片/貼片

包裝盒: 8-SOIC (0.154", 3.90mm Width)

技術: 矽

輸入類型: -

工作溫度: -55°C ~ 150°C (TJ)

輸出類型: N通道

特徵: -

通道數: 2 Channel

界面: 開關

供應商-設備-包: 8-SOIC

比率-輸入:輸出: 1899/12/30 1:01:00

配置: 雙重的

輸出數: 2

電壓-電源-Vcc-Vdd: 不需要

故障保護: -

輸出配置: 低邊

Rds-On-Typ: 60 mOhm

電壓-負載: 60V (Max)

電流輸出最大值: 3.3A

開關型: 繼電器、電磁閥驅動器

晶體管型: 2 N-Channel

Id 連續漏極電流: 3.3 A

Vds-漏-源-擊穿電壓: 67 V

Rds-On-Drain-Source-Resistance: 110 mOhms

晶體管極性: N通道

Tags: NIMD6001A, NIMD60, NIMD6, NIMD, NIM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NIMD6001ANR2G 描述

***et: Transistor MOSFET Array Dual N-CH 60V 3.3A 8-Pin SOIC T/R

***emi: Dual N-Channel MOSFET Driver with Diagnostic Output

***enic: IC PWR DRIVER N-CHAN 1:1 8SOIC

***or: BUFFER/INVERTER PERIPHL DRIVER

***(Formerly Allied Electronics): IRF7342PBF Dual P-channel MOSFET Transistor; 3.4 A; 55 V; 8-Pin SOIC

***itex: Transistor: 2xP-MOSFET; unipolar; -55V; -3.4A; 0.105ohm; 2W; -55+150 deg.C; SMD; SO8

***et Europe: Transistor MOSFET Array Dual P-CH 55V 3.4A 8-Pin SOIC Tube

***ure Electronics: Dual P-Channel 55 V 0.105 Ohm 26 nC HEXFET® Power Mosfet - SOIC-8

***id Electronics: Transistor MOSFET 2xP-Ch. 3,4A/55V SO8 IRF 7342 TRPBF

***nell: MOSFET, DUAL, PP, LOGIC, SO-8; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: 3.4A; Drain Source Voltage Vds: -55V; On Resistance Rds(on): 0.105ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1V

***roFlash: Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***(Formerly Allied Electronics): IRF7343PBF Dual N/P-channel MOSFET Transistor; 3.4 A; 4.7 A; 55 V; 8-Pin SOIC

***ure Electronics: Dual N/P-Channel 55 V 0.065/0.17 Ohm 36/38 nC HEXFET® Power Mosfet - SOIC-8

***id Electronics: Transistor MOSFET N+P-Ch.4,7+3,4A/55V SO8 IRF 7343 TRPBF

***ineon SCT: 55V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***nell: MOSFET, DUAL, NP, LOGIC, SO-8; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 4.7A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.05ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; P

***th Star Micro: Transistor MOSFET P-CH 30V 4.1A 8-Pin SOIC N T/R

***ure Electronics: Single P-Channel 30 V 0.042 Ohms Surface Mount Power Mosfet - SOIC-8

***enic: 30V 4.1A 1.3W 42m´Î@10V5.7A 3V@250Ã×A P Channel SOIC-8_150mil MOSFETs ROHS

***ment14 APAC: P CH MOSFET; Transistor Polarity:P Chann; P CH MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-5.7A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1V; Power Dissipation Pd:2.5W

***(Formerly Allied Electronics): NTMD4N03R2G Dual N-channel MOSFET Transistor; 4 A; 30 V; 8-Pin SOIC

***Yang: Transistor MOSFET Array Dual N-CH 30V 4A 8-Pin SOIC T/R - Tape and Reel

***ure Electronics: N-Channel 30 V 48 mOhm 2 W Surface Mount Power MOSFET - SOIC-8

***emi: Power MOSFET 30V 4A 60 mOhm Dual N-Channel S0-8

***nell: MOSFET, DUAL N-CH, 30V, 4A, SOIC; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.048ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.9V; Power Dissipation Pd: 2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ure Electronics: ZXMHC3 Series 30 V 33 mOhm 2N/2P-Ch. H-Bridge Enhancement Mode MOSFET - SOIC-8

***ark: MOSFET, COMP, H-BRIDE, 30V, SO8; Channel Type:Complementary N and P Channel; Drain Source Voltage Vds N Channel:30V; Drain Source Voltage Vds P Channel:30V; Continuous Drain Current Id N Channel:3.98A; No. of Pins:8Pins RoHS Compliant: Yes

***el Electronic: Transistors - FETs, MOSFETs - Arrays 1 (Unlimited) Tape & Reel (TR) 8-SOIC (0.154, 3.90mm Width) Surface Mount 2 N and 2 P-Channel (H-Bridge) Logic Level Gate -55°C~150°C TJ 33m Ω @ 5A, 10V 3V @ 250μA MOSFET 2N/2P-CH 30V 8-SOIC

***nell: MOSFET, COMP, H-BRIDE, 30V, SO8; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 3.98A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 870mW; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Continuous Drain Current Id, N Channel: 5A; Continuous Drain Current Id, P Channel: -4.1A; Drain Source Voltage Vds, N Channel: 30V; Drain Source Voltage Vds, P Channel: -30V; Module Configuration: Half Bridge; On Resistance Rds(on), N Channel: 0.033ohm; On Resistance Rds(on), P Channel: 0.055ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C

Market price

型號	製造商	描述	庫存	價格
NIMD6001ANR2G DISTI # NIMD6001ANR2G-ND	ON Semiconductor	IC MOSFET DVR 60V 3.3A 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
NIMD6001ANR2G DISTI # NIMD6001ANR2G	ON Semiconductor	Trans MOSFET N-CH 60V 3.3A 8-Pin SOIC N T/R - Bulk (Alt: NIMD6001ANR2G) Min Qty: 447 Container: Bulk	Americas - 0	4470:$0.6909 2235:$0.7079 1341:$0.7169 894:$0.7269 447:$0.7319
NIMD6001ANR2G	ON Semiconductor	Buffer/Inverter Based Peripheral Driver RoHS: Compliant	14	1000:$0.7400 500:$0.7800 100:$0.8100 25:$0.8400 1:$0.9100

相關產品

圖片	型號	描述
	Mfr.#: NIMD6001ANR2G OMO.#: OMO-NIMD6001ANR2G-ON-SEMICONDUCTOR	RF Bipolar Transistors MOSFET 60V 3.3A 130 MOHM DUAL
	Mfr.#: NIMD6001A OMO.#: OMO-NIMD6001A-1190	全新原裝
	Mfr.#: NIMD6001AR2G OMO.#: OMO-NIMD6001AR2G-1190	全新原裝
	Mfr.#: NIMD6001N OMO.#: OMO-NIMD6001N-1190	全新原裝
	Mfr.#: NIMD6001NR2G OMO.#: OMO-NIMD6001NR2G-1190	Trans MOSFET N-CH 60V 3.3A 8-Pin SOIC N T/R - Bulk (Alt: NIMD6001NR2G)

可用性

庫存:: Available
訂購:: 2500
輸入數量:

NIMD6001ANR2G的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]

參考價格（美元）

數量
單價
小計金額

1: ~~US$1.04~~; ~~US$1.04~~

10: ~~US$0.98~~; ~~US$9.84~~

100: ~~US$0.93~~; ~~US$93.27~~

500: ~~US$0.88~~; ~~US$440.45~~

1000: ~~US$0.83~~; ~~US$829.10~~

從...開始

NIMD6001A 3
NIMD60 5
NIMD6 8
NIMD 10
NIM 79

NIMD6001ANR2G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes