IPD65R600E6ATMA1

Mfr. #:: IPD65R600E6ATMA1
製造商:: Infineon Technologies
描述:: MOSFET N-Ch 700V 7.3A DPAK-2
生命週期:: 製造商新產品
數據表:: IPD65R600E6ATMA1 數據表
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ECAD Model:

產品屬性
屬性值

製造商: 英飛凌科技

產品分類: 晶體管 - FET、MOSFET - 單

系列: XPD65R600

打包: 捲軸

部分別名: IPD65R600E6 SP001117096

單位重量: 0.139332 oz

安裝方式: 貼片/貼片

商品名: 酷摩

包裝盒: TO-252-3

技術: 矽

通道數: 1 Channel

配置: 單身的

晶體管型: 1 N-Channel

鈀功耗: 28 W

最高工作溫度: + 150 C

最低工作溫度: - 55 C

秋季時間: 11 ns

上升時間: 8 ns

VGS-柵極-源極-電壓: 30 V

Id 連續漏極電流: 7.3 A

Vds-漏-源-擊穿電壓: 700 V

VGS-th-Gate-Source-Threshold-Voltage: 3 V

Rds-On-Drain-Source-Resistance: 600 mOhms

晶體管極性: N通道

典型關斷延遲時間: 64 ns

典型開啟延遲時間: 10 ns

Qg-門電荷: 23 nC

Tags: IPD65R600E6, IPD65R600E, IPD65R60, IPD65R6, IPD65R, IPD65, IPD6, IPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPD65R600E6ATMA1 描述

***et Europe: Transistor MOSFET N-CH 650V 7.3A 3-Pin TO-252 T/R

***ure Electronics: Single N-Channel 650 V 0.6 Ohm 23 nC CoolMOS Power Mosfet - TO-252-3

***ineon SCT: CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS

***ark: Mosfet, N Ch, 700V, 7.3A, To-252-3; Transistor Polarity:n Channel; Continuous Drain Current Id:7.3A; Drain Source Voltage Vds:700V; On Resistance Rds(On):0.54Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ineon: CoolMOS E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Very high commutation ruggedness; Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss); Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

Market price

型號	製造商	描述	庫存	價格
IPD65R600E6ATMA1 DISTI # 33356343	Infineon Technologies AG	Trans MOSFET N-CH 650V 7.3A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2500	2500:$0.6693
IPD65R600E6ATMA1 DISTI # IPD65R600E6ATMA1-ND	Infineon Technologies AG	MOSFET N-CH 650V 7.3A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call	2500:$0.6836
IPD65R600E6ATMA1 DISTI # V36:1790_06384022	Infineon Technologies AG	Trans MOSFET N-CH 650V 7.3A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	0
IPD65R600E6ATMA1 DISTI # SP001117096	Infineon Technologies AG	Trans MOSFET N-CH 650V 7.3A 3-Pin TO-252 T/R (Alt: SP001117096) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 2500	25000:€0.5779 15000:€0.6169 10000:€0.6779 5000:€0.7579 2500:€0.9719
IPD65R600E6ATMA1 DISTI # IPD65R600E6ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 650V 7.3A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD65R600E6ATMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.5639 15000:$0.5739 10000:$0.5939 5000:$0.6159 2500:$0.6389
IPD65R600E6ATMA1 DISTI # 726-IPD65R600E6ATMA1	Infineon Technologies AG	MOSFET N-Ch 700V 7.3A DPAK-2	0	1:$1.4500 10:$1.2400 100:$0.9550 500:$0.8440 1000:$0.6660 2500:$0.5910 10000:$0.5690
IPD65R600E6ATMA1 DISTI # 2443437	Infineon Technologies AG	MOSFET, N CH, 700V, 7.3A, TO-252-3 RoHS: Compliant	0	2500:$1.0000 1000:$1.0200 500:$1.3000 100:$1.4700 10:$1.9200 1:$2.2500
IPD65R600E6ATMA1 DISTI # 2443437	Infineon Technologies AG	MOSFET, N CH, 700V, 7.3A, TO-252-3 RoHS: Compliant	0	500:£0.6500 250:£0.6940 100:£0.7360 25:£0.9530 5:£1.0500
IPD65R600E6ATMA1 DISTI # XSKDRABS0034511	Infineon Technologies AG	RoHS: Compliant	7500 in Stock0 on Order	7500:$0.8363 2500:$0.8960

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圖片	型號	描述
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	Mfr.#: IPD65R600E OMO.#: OMO-IPD65R600E-1190	MOSFET, N CH, 700V, 7.3A, TO-252-3
	Mfr.#: IPD65R600E6 OMO.#: OMO-IPD65R600E6-1190	Trans MOSFET N-CH 650V 7.3A 3-Pin TO-252 T/R (Alt: SP000800216)
	Mfr.#: IPD65R600E6ATMA1 OMO.#: OMO-IPD65R600E6ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-Ch 700V 7.3A DPAK-2