IRFR1010ZPBF

IRFR1010ZPBF
Mfr. #:
IRFR1010ZPBF
製造商:
Infineon / IR
描述:
MOSFET 55V 1 N-CH HEXFET 7.5mOhms 63nC
生命週期:
製造商新產品
數據表:
IRFR1010ZPBF 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFR1010ZPBF Datasheet
ECAD Model:
產品屬性
屬性值
製造商:
英飛凌
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
貼片/貼片
包裝/案例:
TO-252-3
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
55 V
Id - 連續漏極電流:
91 A
Rds On - 漏源電阻:
7.5 mOhms
Vgs - 柵源電壓:
20 V
Qg - 門電荷:
63 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 175 C
Pd - 功耗:
140 W
配置:
單身的
頻道模式:
增強
打包:
管子
高度:
2.3 mm
長度:
6.5 mm
晶體管類型:
1 N-Channel
類型:
汽車MOSFET
寬度:
6.22 mm
品牌:
英飛凌/紅外
秋季時間:
48 ns
產品類別:
MOSFET
上升時間:
76 ns
出廠包裝數量:
3000
子類別:
MOSFET
典型關斷延遲時間:
42 ns
典型的開啟延遲時間:
17 ns
第 # 部分別名:
SP001578020
單位重量:
0.139332 oz
Tags
IRFR1010, IRFR10, IRFR1, IRFR, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 5.8Milliohms;ID 42A;D-Pak (TO-252AA);-55deg
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
***ure Electronics
Single N-Channel 55 V 7.5 mOhm 63 nC HEXFET® Power Mosfet - DPAK
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:91A; Drain Source Voltage Vds:55V; On Resistance Rds(on):7.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-252; Current Id Max:42A; Current Temperature:25°C; External Depth:10.5mm; External Length / Height:2.55mm; External Width:6.8mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Power Dissipation Ptot Max:140W; Pulse Current Idm:360A; SMD Marking:IRFR1010ZPBF; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
型號 製造商 描述 庫存 價格
IRFR1010ZPBF
DISTI # IRFR1010ZPBF-ND
Infineon Technologies AGMOSFET N-CH 55V 42A DPAK
RoHS: Compliant
Min Qty: 1
Container: Tube
Limited Supply - Call
    IRFR1010ZPBF
    DISTI # IRFR1010ZPBF
    Infineon Technologies AGTrans MOSFET N-CH 55V 91A 3-Pin(2+Tab) DPAK - Rail/Tube (Alt: IRFR1010ZPBF)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tube
    Americas - 100
      IRFR1010ZPBF
      DISTI # 31K1960
      Infineon Technologies AGN CHANNEL MOSFET, 55V, 42A, D-PAK,Transistor Polarity:N Channel,Continuous Drain Current Id:42A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.0058ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Product Range:-RoHS Compliant: Yes0
      • 1:$1.5100
      • 10:$1.2900
      • 100:$0.9840
      • 500:$0.8700
      • 1000:$0.6870
      • 5000:$0.6090
      IRFR1010ZPBF.
      DISTI # 29AC7057
      Infineon Technologies AGN CHANNEL MOSFET, 55V, 42A, D-PAK,Transistor Polarity:N Channel,Continuous Drain Current Id:42A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.0058ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Product Range:-RoHS Compliant: Yes0
        IRFR1010ZPBF
        DISTI # 70017236
        Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 55V,RDS(ON) 5.8 Milliohms,ID 42A,D-Pak (TO-252AA),-55deg
        RoHS: Compliant
        0
        • 1:$2.2100
        • 1200:$1.9500
        IRFR1010ZPBF
        DISTI # 942-IRFR1010ZPBF
        Infineon Technologies AGMOSFET 55V 1 N-CH HEXFET 7.5mOhms 63nC
        RoHS: Compliant
        828
        • 1:$1.5100
        • 10:$1.2900
        • 100:$0.9840
        • 500:$0.8700
        • 1000:$0.6870
        IRFR1010ZPBF
        DISTI # 8655825P
        Infineon Technologies AGMOSFET N-CH 55V 91A HEXFET DPAK, TU20
        • 100:£0.7120
        • 250:£0.6700
        • 500:£0.6300
        • 1050:£0.4980
        IRFR1010ZPBF
        DISTI # IRFR1010ZPBF
        Infineon Technologies AGTransistor: N-MOSFET,unipolar,55V,91A,140W,DPAK150
        • 1:$1.2900
        • 3:$1.1700
        • 10:$0.9600
        • 75:$0.8300
        IRFR1010ZPBF
        DISTI # IRFR1010ZPBF
        Infineon Technologies AGN-Ch 55V 42A 140W 0,0075R TO252AA
        RoHS: Compliant
        250
        • 75:€0.6730
        • 150:€0.5730
        • 300:€0.5230
        • 600:€0.5035
        IRFR1010ZTRPBF
        DISTI # IRFR1010ZPBF-GURT
        Infineon Technologies AGN-Ch 55V 42A 140W 0,0075R TO252AA
        RoHS: Compliant
        0
        • 50:€0.6265
        • 100:€0.5665
        • 500:€0.5365
        • 3000:€0.5165
        IRFR1010ZPBF
        DISTI # 1013382
        Infineon Technologies AGMOSFET, N, D-PAK
        RoHS: Compliant
        0
        • 1:$2.4000
        • 10:$2.0400
        • 100:$1.5600
        • 500:$1.3800
        • 1000:$1.1000
        • 3000:$0.9930
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        Module DC-DC 1-OUT 0.7V to 1.325V 0.002A 100-Pin QFN EP Tray
        CRCW060313K0FKEAC

        Mfr.#: CRCW060313K0FKEAC

        OMO.#: OMO-CRCW060313K0FKEAC-VISHAY-DALE

        D11/CRCW0603-C 100 13K 1% ET1
        CRCW040222R0FKEDC

        Mfr.#: CRCW040222R0FKEDC

        OMO.#: OMO-CRCW040222R0FKEDC-VISHAY-DALE

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        CRCW0603680RFKEAC

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        D11/CRCW0603-C 100 680R 1% ET1
        可用性
        庫存:
        Available
        訂購:
        1984
        輸入數量:
        IRFR1010ZPBF的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
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