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FDP2D3N10C

FDP2D3N10C
Mfr. #:
FDP2D3N10C
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET PTNG 100/20V inTO220 3L JEDEC GREEN EMC
生命週期:
製造商新產品
數據表:
FDP2D3N10C 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-220-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
100 V
Id - 連續漏極電流：
222 A
Rds On - 漏源電阻：
2.1 mOhms
Vgs th - 柵源閾值電壓：
2 V
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
152 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 175 C
Pd - 功耗：
214 W
配置：
單身的
頻道模式：
增強
打包：
管子
系列：
FDP2D3N10C
晶體管類型：
1 N-Channel
品牌：
安森美半導體/飛兆半導體
正向跨導 - 最小值：
222 S
秋季時間：
32 ns
產品類別：
MOSFET
上升時間：
35 ns
出廠包裝數量：
800
子類別：
MOSFET
典型關斷延遲時間：
74 ns
典型的開啟延遲時間：
42 ns
單位重量：
0.063493 oz
Tags
FDP2, FDP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
FDP Series 100V 2.3mOhm 45W Through Hole N-Channel PowerTrench® Mosfet - TO-220
***Yang
Trans MOSFET N-CH 100V 222A 3-Pin TO-220 Tube - Rail/Tube
***el Electronic
MCU 32-bit SPC560P50x e200 RISC 512KB Flash 5V Automotive 100-Pin LQFP Tray
***emi
N-Channel PowerTrench® MOSFET, Shielded Gate, 100V, 222A, 2.3mΩ N-Channel Shielded Gate PowerTrench® MOSFET, 100V, 222A, 2.3mΩ
*** Stop Electro
Power Field-Effect Transistor, 120A I(D), 100V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
型號 製造商 描述 庫存 價格
FDP2D3N10C
DISTI # V36:1790_18468181		ON SemiconductorN-Channel Shielded gate power Trench MOSFET0
  • 800000:$3.3560
  • 400000:$3.3580
  • 80000:$3.5490
  • 8000:$3.8730
  • 800:$3.9270
FDP2D3N10C
DISTI # FDP2D3N10C-ND		ON SemiconductorMOSFET N-CH 100V 222A TO220-3
RoHS: Not compliant
Min Qty: 800
Container: Tube		Temporarily Out of Stock
  • 800:$3.9270
FDP2D3N10C
DISTI # FDP2D3N10C		ON SemiconductorTrans MOSFET N-CH 100V 222A 3-Pin TO-220 Tube - Rail/Tube (Alt: FDP2D3N10C)
RoHS: Compliant
Min Qty: 800
Container: Tube		Americas - 0
  • 8000:$3.4900
  • 3200:$3.5900
  • 4800:$3.5900
  • 800:$3.6900
  • 1600:$3.6900
FDP2D3N10C
DISTI # FDP2D3N10C		ON SemiconductorTrans MOSFET N-CH 100V 222A 3-Pin TO-220 Tube (Alt: FDP2D3N10C)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€2.1900
  • 500:€2.3900
  • 100:€2.4900
  • 50:€2.5900
  • 25:€2.6900
  • 10:€2.7900
  • 1:€2.9900
FDP2D3N10C
DISTI # 24AC8560		ON SemiconductorPTNG 100/20V IN TO220 3L / TUBE0
  • 500:$2.8800
  • 250:$2.9600
  • 100:$3.5400
  • 50:$4.0900
  • 25:$4.3600
  • 10:$4.9700
  • 1:$5.7500
FDP2D3N10C
DISTI # 512-FDP2D3N10C		ON SemiconductorMOSFET PTNG 100/20V inTO220 3L JEDEC GREEN EMC
RoHS: Compliant		0
  • 1:$5.9600
  • 10:$5.0600
  • 100:$4.3900
  • 250:$4.1600
  • 500:$3.7400
FDP2D3N10C
DISTI # 2768333		ON SemiconductorMOSFET, N-CH, 100V, 222A, TO-2200
  • 500:£2.8900
  • 250:£3.2000
  • 100:£3.3800
  • 10:£3.9000
  • 1:£5.0700
FDP2D3N10C
DISTI # 2768333		ON SemiconductorMOSFET, N-CH, 100V, 222A, TO-220
RoHS: Compliant		0
  • 1000:$4.5400
  • 500:$5.0200
  • 250:$5.7200
  • 100:$6.3600
  • 10:$7.3400
  • 1:$8.4200
圖片 型號 描述
RYC002N05T316

Mfr.#: RYC002N05T316

OMO.#: OMO-RYC002N05T316

 MOSFET 0.9V Drive Nch Si MOSFET
SSM3J328R,LF

Mfr.#: SSM3J328R,LF

OMO.#: OMO-SSM3J328R-LF

 MOSFET P-Ch Sm Sig FET Id -6A -20V -8VGSS
CRCW0603432KFKEA

Mfr.#: CRCW0603432KFKEA

OMO.#: OMO-CRCW0603432KFKEA

 Thick Film Resistors - SMD 1/10watt 432Kohms 1%
CRCW08051K00FKEAC

Mfr.#: CRCW08051K00FKEAC

OMO.#: OMO-CRCW08051K00FKEAC

 Thick Film Resistors - SMD 1/8Watt 1Kohms 1% Commercial Use
CRCW06034M75FKEA

Mfr.#: CRCW06034M75FKEA

OMO.#: OMO-CRCW06034M75FKEA

 Thick Film Resistors - SMD 1/10watt 4.75Mohms 1%
CR0603-FX-6492ELF

Mfr.#: CR0603-FX-6492ELF

OMO.#: OMO-CR0603-FX-6492ELF

 Thick Film Resistors - SMD 64.9K ohm 1%
CR0603-FX-6492ELF

Mfr.#: CR0603-FX-6492ELF

OMO.#: OMO-CR0603-FX-6492ELF-BOURNS

 Thick Film Resistors - SMD 64.9K ohm 1%
CRCW06034M75FKEA

Mfr.#: CRCW06034M75FKEA

OMO.#: OMO-CRCW06034M75FKEA-VISHAY-DALE

 Thick Film Resistors - SMD 1/10watt 4.75Mohms 1%
RYC002N05T316

Mfr.#: RYC002N05T316

OMO.#: OMO-RYC002N05T316-ROHM-SEMI

 全新原裝
SSM3J328R,LF

Mfr.#: SSM3J328R,LF

OMO.#: OMO-SSM3J328R-LF-TOSHIBA-SEMICONDUCTOR-AND-STOR

 Trans MOSFET P-CH Si 20V 6A 3-Pin SOT-23F
可用性
庫存:
Available
訂購:
5500
輸入數量:
FDP2D3N10C的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$5.96
US$5.96
10
US$5.06
US$50.60
100
US$4.39
US$439.00
250
US$4.16
US$1 040.00
500
US$3.74
US$1 870.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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