RS1E280GNTB

Mfr. #:: RS1E280GNTB
製造商:: Rohm Semiconductor
描述:: MOSFET N-CH 30V 28A 8-HSOP
生命週期:: 製造商新產品
數據表:: RS1E280GNTB 數據表
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產品屬性
屬性值

製造商: 羅姆半導體

產品分類: 晶體管 - FET、MOSFET - 單

系列: RS1E280GN

打包: 捲軸

單位重量: 0.002490 oz

安裝方式: 貼片/貼片

包裝盒: HSOP-8

技術: 矽

通道數: 1 Channel

配置: 單身的

晶體管型: 1 N-Channel

鈀功耗: 3 W

最高工作溫度: + 150 C

最低工作溫度: - 55 C

秋季時間: 18 ns

上升時間: 12.3 ns

VGS-柵極-源極-電壓: 20 V

Id 連續漏極電流: 28 A

Vds-漏-源-擊穿電壓: 30 V

VGS-th-Gate-Source-Threshold-Voltage: 2.5 V

Rds-On-Drain-Source-Resistance: 2.6 mOhms

晶體管極性: N通道

典型關斷延遲時間: 61.3 ns

典型開啟延遲時間: 19.9 ns

Qg-門電荷: 36 nC

正向跨導最小值: 29 S

Tags: RS1E280, RS1E28, RS1E2, RS1E, RS1

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

RS1E280GNTB 描述

***p One Stop Global: Trans MOSFET N-CH 30V 28A Automotive 8-Pin HSOP EP T/R

***et: 4.5V DRIVE NCH MOSFET, HSOP8(SINGLE), NCH, DISCRETE

***nell: MOSFET, N-CH, 30V, 80A, HSOP; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.002ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 31W; Transistor Case Style: HSOP; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)

***ure Electronics: N-Channel 30 V 42 A 2.4 mOhm Surface Mount PowerTrench® SyncFETTM - Power56

*** Stop Electro: Power Field-Effect Transistor, 26A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***nell: MOSFET, N CH, 30V, 42A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***rchild Semiconductor: The FDMS7660AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.

***emi: N-Channel PowerTrench® MOSFET 30V, 131A, 2.5mΩ

***r Electronics: Power Field-Effect Transistor, 26A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(on), fast switching speed, and body diode reverse-recovery performance.

***ure Electronics: N-Channel 30 V 2.5 mOhm 41 W Surface Mount Power Trench - Power 33

***r Electronics: Power Field-Effect Transistor, 40A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA

***rchild Semiconductor: The FDMC7660S has been designed to minimize losses in power conversion applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.

***ark: Mosfet Transistor, N Channel, 24 A, 30 V, 0.0023 Ohm, 10 V, 1.8 V Rohs Compliant: Yes

***(Formerly Allied Electronics): IRF8788PBF N-channel MOSFET Transistor,24 A, 30 V, 8-Pin SOIC

***ure Electronics: Single N-Channel 30 V 2.8 mOhm 66 nC HEXFET® Power Mosfet - SOIC-8

***p One Stop: Trans MOSFET N-CH Si 30V 24A 8-Pin SOIC T/R

***nell: MOSFET, N-CH, 30V, SO8; Transistor Polarity: N Channel; Continuous Drain Current Id: 24A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0023ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissi

***ure Electronics: Single N-Channel 30 V 2.5 mOhm 124 nC OptiMOS Power Mosfet - TDSON-8

***ment14 APAC: MOSFET, N CH, 100A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):1.7mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:96W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Power Dissipation Pd:96W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

***ure Electronics: N-Channel 30 V 3 mOhm OptiMOS3 Power-MOSFET - PG-TDSON-8

***ment14 APAC: MOSFET, N CH, 100A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:69W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Power Dissipation Pd:69W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

Market price

型號	製造商	描述	庫存	價格
RS1E280GNTB DISTI # 30592379	ROHM Semiconductor	Trans MOSFET N-CH 30V 28A 8-Pin HSOP EP T/R RoHS: Compliant	100	49:$0.5279
RS1E280GNTB DISTI # RS1E280GNTBCT-ND	ROHM Semiconductor	MOSFET N-CH 30V 28A 8-HSOP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	4889In Stock	1000:$0.3878 500:$0.4912 100:$0.5946 10:$0.7630 1:$0.8500
RS1E280GNTB DISTI # RS1E280GNTBDKR-ND	ROHM Semiconductor	MOSFET N-CH 30V 28A 8-HSOP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	4889In Stock	1000:$0.3878 500:$0.4912 100:$0.5946 10:$0.7630 1:$0.8500
RS1E280GNTB DISTI # RS1E280GNTBTR-ND	ROHM Semiconductor	MOSFET N-CH 30V 28A 8-HSOP RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	2500:$0.3514
RS1E280GNTB DISTI # RS1E280GNTB	ROHM Semiconductor	4.5V DRIVE NCH MOSFET, HSOP8(SINGLE), NCH, DISCRETE - Tape and Reel (Alt: RS1E280GNTB) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.3969 5000:$0.3719 10000:$0.3499 15000:$0.3309 25000:$0.3219
RS1E280GNTB DISTI # RS1E280GNTB	ROHM Semiconductor	4.5V DRIVE NCH MOSFET, HSOP8(SINGLE), NCH, DISCRETE (Alt: RS1E280GNTB) RoHS: Compliant Min Qty: 1	Europe - 0	1:€0.6479 10:€0.5759 25:€0.5189 50:€0.4709 100:€0.4319 500:€0.3989 1000:€0.3699
RS1E280GNTB DISTI # 755-RS1E280GNTB	ROHM Semiconductor	MOSFET 4.5V Drive Nch MOSFET RoHS: Compliant	2772	1:$0.8200 10:$0.7030 100:$0.5400 500:$0.4770 1000:$0.3770 2500:$0.3340 10000:$0.3220 25000:$0.3120
RS1E280GNTB	ROHM Semiconductor		80	49:$1.3860 14:$1.5750 1:$2.5200
RS1E280GNTB			115
RS1E280GNTB	ROHM Semiconductor	MOSFET 4.5V Drive Nch MOSFET RoHS: Compliant	Americas -
RS1E280GNTB DISTI # 2706648	ROHM Semiconductor	MOSFET, N-CH, 30V, 80A, HSOP RoHS: Compliant	40	500:£0.3280 250:£0.3490 100:£0.3710 25:£0.4910 5:£0.5420
RS1E280GNTB DISTI # 2706648	ROHM Semiconductor	MOSFET, N-CH, 30V, 80A, HSOP RoHS: Compliant	40	500:$0.7300 100:$0.9410 10:$1.1900 1:$1.3400
RS1E280GNTB	ROHM Semiconductor	RoHS(ship within 1day)	100	1:$1.7500 10:$1.3200 50:$0.8800 100:$0.7000 500:$0.6600 1000:$0.6300

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