SIHB12N65E-GE3

SIHB12N65E-GE3
Mfr. #:
SIHB12N65E-GE3
製造商:
Vishay / Siliconix
描述:
MOSFET 650V Vds 30V Vgs D2PAK (TO-263)
生命週期:
製造商新產品
數據表:
SIHB12N65E-GE3 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHB12N65E-GE3 Datasheet
ECAD Model:
更多信息:
SIHB12N65E-GE3 更多信息
產品屬性
屬性值
製造商:
威世
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
通孔
包裝/案例:
TO-220FP-3
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
700 V
Id - 連續漏極電流:
12 A
Rds On - 漏源電阻:
380 mOhms
Vgs th - 柵源閾值電壓:
4 V
Vgs - 柵源電壓:
30 V
Qg - 門電荷:
35 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
Pd - 功耗:
156 W
配置:
單身的
頻道模式:
增強
打包:
大部分
系列:
E
品牌:
威世 / Siliconix
秋季時間:
18 ns
產品類別:
MOSFET
上升時間:
19 ns
出廠包裝數量:
1000
子類別:
MOSFET
典型關斷延遲時間:
35 ns
典型的開啟延遲時間:
16 ns
單位重量:
0.050717 oz
Tags
SIHB12N6, SIHB12N, SIHB12, SIHB1, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
E Series N-Channel 650 V 380 mO 35 nC Surface Mount Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH 650V 12A 3-Pin(2+Tab) D2PAK
***nell
MOSFET, N CH, 650V, 12A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.33ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Powe
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
型號 製造商 描述 庫存 價格
SIHB12N65E-GE3
DISTI # V36:1790_09219044
Vishay IntertechnologiesTrans MOSFET N-CH 650V 12A 3-Pin(2+Tab) D2PAK
RoHS: Compliant
0
  • 1000000:$1.2910
  • 500000:$1.2950
  • 100000:$1.7320
  • 10000:$2.5750
  • 1000:$2.7200
SIHB12N65E-GE3
DISTI # SIHB12N65E-GE3-ND
Vishay SiliconixMOSFET N-CH 650V 12A D2PAK
Min Qty: 1
Container: Tube
3000In Stock
  • 5000:$1.2594
  • 2500:$1.2783
  • 1000:$1.3730
  • 500:$1.6571
  • 100:$2.0169
  • 10:$2.5090
  • 1:$2.7900
SIHB12N65E-GE3
DISTI # SIHB12N65E-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 650V 12A 3-Pin D2PAK - Tape and Reel (Alt: SIHB12N65E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 4000:$1.1900
  • 6000:$1.1900
  • 10000:$1.1900
  • 1000:$1.2900
  • 2000:$1.2900
SIHB12N65E-GE3
DISTI # SIHB12N65E-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 650V 12A 3-Pin D2PAK (Alt: SIHB12N65E-GE3)
Min Qty: 1
Europe - 0
    SIHB12N65E-GE3
    DISTI # 99W9446
    Vishay IntertechnologiesN-CHANNEL 650V
    RoHS: Not Compliant
    0
    • 1000:$1.6300
    • 500:$1.7400
    • 250:$1.8700
    • 100:$2.0400
    • 1:$2.4900
    SIHB12N65E-GE3
    DISTI # 78-SIHB12N65E-GE3
    Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs D2PAK (TO-263)
    RoHS: Compliant
    2000
    • 1:$2.7900
    • 10:$2.3600
    • 100:$1.9400
    • 500:$1.8100
    • 1000:$1.3700
    • 2000:$1.2700
    • 5000:$1.2500
    SIHB12N65E-GE3Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs D2PAK (TO-263)
    RoHS: Compliant
    Americas -
      SIHB12N65E-GE3
      DISTI # 2400357
      Vishay IntertechnologiesMOSFET, N CH, 650V, 12A, TO-263-3
      RoHS: Compliant
      289
      • 5000:$1.9400
      • 3000:$2.0100
      • 1000:$2.1600
      • 100:$3.1700
      • 25:$3.7200
      • 10:$3.9500
      • 1:$4.3800
      SIHB12N65E-GE3
      DISTI # 2400357
      Vishay IntertechnologiesMOSFET, N CH, 650V, 12A, TO-263-3
      RoHS: Compliant
      289
      • 1000:£1.0400
      • 500:£1.3500
      • 250:£1.4400
      • 100:£1.5400
      • 10:£1.9900
      • 1:£2.7200
      圖片 型號 描述
      SMBJ5360B-TP

      Mfr.#: SMBJ5360B-TP

      OMO.#: OMO-SMBJ5360B-TP

      Zener Diodes 5W 25V
      SMBJ5360B-TP

      Mfr.#: SMBJ5360B-TP

      OMO.#: OMO-SMBJ5360B-TP-MICRO-COMMERCIAL-COMPONENTS

      Zener Diodes 5W 25V
      AGN210S4H

      Mfr.#: AGN210S4H

      OMO.#: OMO-AGN210S4H-PANASONIC

      Low Signal Relays - PCB 2 Form C 1 Form A 30VDC SMD 4.5V
      74477010

      Mfr.#: 74477010

      OMO.#: OMO-74477010-WURTH-ELECTRONICS

      FIXED IND 10UH 6.2A 22 MOHM SMD
      SMM02040C8253FB300

      Mfr.#: SMM02040C8253FB300

      OMO.#: OMO-SMM02040C8253FB300-VISHAY

      MELF Resistors 1/4watt 825Kohms 1% 50ppm
      可用性
      庫存:
      Available
      訂購:
      1985
      輸入數量:
      SIHB12N65E-GE3的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
      參考價格(美元)
      數量
      單價
      小計金額
      1
      US$2.94
      US$2.94
      10
      US$2.44
      US$24.40
      100
      US$1.89
      US$189.00
      500
      US$1.65
      US$825.00
      1000
      US$1.37
      US$1 370.00
      2000
      US$1.27
      US$2 540.00
      5000
      US$1.23
      US$6 150.00
      10000
      US$1.18
      US$11 800.00
      由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
      從...開始
      最新產品
      • -12 V and -20 V P-Channel Gen III MOSFETs
        Vishay's TrenchFET® MOSFETs features low on-resistance for -12 V and -20 V devices, allowing for lower voltage drops.
      • DG2788A Dual DPDT / Quad SPDT Analog Switch
        Vishay introduces the dual DPDT / quad SPDT analog switch featuring low resistance of 0.37 Ω at 2.7 V in the compact 2.6 mm x 1.8 mm x 0.55 mm miniQFN16 package.
      • Smart Load Switches
        Vishay's smart load switch features a simplified GPIO control can be used to implement power distribution and sequencing of multiple-sub-systems.
      • Compare SIHB12N65E-GE3
        SIHB12N60E vs SIHB12N60EGE3 vs SIHB12N60ET1GE3
      • SUM70101EL 100 V P-Channel MOSFET
        Vishay Siliconix's SUM70101EL MOSFET has industry leading RDS(ON) (0.0101 Ω at -10 V and 0.015 Ω at -4.5 V) minimizes conduction loss and increases efficiency.
      • DGQ2788A AEC-Q100 Qualified Analog Switch
        The wide operation voltage range, low resistance, and high bandwidth of Vishay Siliconix's DGQ2788A make it ideal for a variety of design needs, simplifying the BOM.
      Top