IDM10G120C5XTMA1

IDM10G120C5XTMA1
Mfr. #:
IDM10G120C5XTMA1
製造商:
Infineon Technologies
描述:
Schottky Diodes & Rectifiers SIC CHIP/DISCRETE
生命週期:
製造商新產品
數據表:
IDM10G120C5XTMA1 數據表
交貨:
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支付:
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ECAD Model:
更多信息:
IDM10G120C5XTMA1 更多信息
產品屬性
屬性值
製造商:
英飛凌
產品分類:
肖特基二極管和整流器
RoHS:
Y
產品:
肖特基碳化矽二極管
安裝方式:
貼片/貼片
包裝/案例:
TO-252-2
如果 - 正向電流:
10 A
Vrrm - 重複反向電壓:
1.2 kV
Vf - 正向電壓:
1.5 V
Ifsm - 正向浪湧電流:
99 A
配置:
單身的
技術:
碳化矽
Ir - 反向電流:
4 uA
最低工作溫度:
- 55 C
最高工作溫度:
+ 175 C
打包:
捲軸
品牌:
英飛凌科技
Pd - 功耗:
223 W
產品類別:
肖特基二極管和整流器
出廠包裝數量:
2500
子類別:
二極管和整流器
商品名:
冷卻碳化矽
Vr - 反向電壓:
1.2 kV
第 # 部分別名:
IDM10G120C5 SP001127116
單位重量:
0.011993 oz
Tags
IDM10, IDM1, IDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Stop Electro
Rectifier Diode, Schottky, 1 Phase, 1 Element, 1200V V(RRM), Silicon Carbide, TO-252
***ineon SCT
1200 V Silicion Carbide Schottky diode in a DPAK real2pin package, PG-TO252-2, RoHS
***ure Electronics
IDM10G120C5 Series 1200 V 38 A 5th Generation ThinQ!™SiC Schottky Diode-TO-252-3
***ical
Rectifier Diode Schottky 1.2KV 38A 3-Pin(2+Tab) DPAK T/R
***nell
SIC SCHOTTKY DIODE, 1.2KV, 38A, TO-252; Product Range: thinQ 5G 1200V Series; Diode Configuration: Single; Repetitive Reverse Voltage Vrrm Max: 1.2kV; Continuous Forward Current If: 38A; Total Capacitive Charge Qc: 41nC; Diode Case Style: TO-252; No. of Pins: 2 Pin; Junction Temperature Tj Max: 175°C; Automotive Qualification Standard: -; SVHC: No SVHC (27-Jun-2018); Forward Current If(AV): 38A; Forward Surge Current Ifsm Max: 99A; Forward Voltage VF Max: 1.8V; Operating Temperature Max: 175°C; Semiconductor Technology: SiC
***ineon
With CoolSiC generation 5 Infineon presents a new leading edge technology for SiC Schottky Barrier diodes, delivering market leading efficiency, more system reliability at attractive cost point. Infineons thin wafer technology, already introduced with Generation 2, is now combined with a new, merged pn junction bringing improved conduction losses, thermal characteristics and surge capabilities. The result is a series of products delivering improved efficiency and reliability in PFC and Boost stages over all load conditions with respect to all previous CoolSiC generations. | Summary of Features: Best-in-class forward voltage (V F); No reverse recovery charge; Mild positive temperature dependency of V F; Best-in-class surge current capability; Excellent thermal performance; Up to 40A rated diode | Benefits: Highest system efficiency; Improved system efficiency at low switching frequencies; Increased power density at high switching frequencies; Higher system reliability; Reduced EMI | Target Applications: Solar inverters; UPS; 3-phase SMPS; Motor drives
CoolSiC™ Schottky Diodes
Infineon CoolSiC™ Schottky Diodes deliver high reliability, optimum efficiency, and industry-leading SiC performance. The Infineon comprehensive portfolio of Silicon Carbide (SiC) devices encompasses 600V and 650V to 1200V Schottky diodes. A much higher breakdown voltage can be reached in SiC material Schottky diodes.
Gen 5 1200V CoolSiC™ Schottky Diodes
Infineon Gen 5 1200V CoolSiC™ Schottky Diodes are offered with forward currents up to 40A for TO-247, 20A in TO-220 and 10A in DPAK. CoolSiC Diodes target solar inverters, UPS, 3P SMPS, energy storage, and motor drives applications. With reduction of forward voltage and temperature dependency, the diodes bring a new level of system efficiency.
型號 製造商 描述 庫存 價格
IDM10G120C5XTMA1
DISTI # V72:2272_13989816
Infineon Technologies AGDiode Schottky 1.2KV 38A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
525
  • 500:$4.9380
  • 250:$5.3860
  • 100:$5.7920
  • 25:$6.5120
  • 10:$6.7810
  • 1:$7.3710
IDM10G120C5XTMA1
DISTI # IDM10G120C5XTMA1CT-ND
Infineon Technologies AGDIODE SCHTKY 1200V 38A PGTO252-2
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2026In Stock
  • 500:$5.9293
  • 100:$6.8092
  • 10:$8.2250
  • 1:$9.1000
IDM10G120C5XTMA1
DISTI # IDM10G120C5XTMA1DKR-ND
Infineon Technologies AGDIODE SCHTKY 1200V 38A PGTO252-2
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2026In Stock
  • 500:$5.9293
  • 100:$6.8092
  • 10:$8.2250
  • 1:$9.1000
IDM10G120C5XTMA1
DISTI # IDM10G120C5XTMA1TR-ND
Infineon Technologies AGDIODE SCHTKY 1200V 38A PGTO252-2
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2500:$4.9519
IDM10G120C5XTMA1
DISTI # 26196598
Infineon Technologies AGDiode Schottky 1.2KV 38A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
525
  • 500:$4.9380
  • 250:$5.3860
  • 100:$5.7920
  • 25:$6.5120
  • 10:$6.7810
  • 2:$7.3710
IDM10G120C5XTMA1
DISTI # IDM10G120C5XTMA1
Infineon Technologies AGSIC CHIP/DISCRETE - Tape and Reel (Alt: IDM10G120C5XTMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$4.9900
  • 5000:$4.8900
  • 10000:$4.6900
  • 15000:$4.4900
  • 25000:$4.3900
IDM10G120C5XTMA1
DISTI # 34AC1583
Infineon Technologies AGSIC SCHOTTKY DIODE, 1.2KV, 38A, TO-252,Product Range:thinQ 5G 1200V Series,Diode Configuration:Single,Repetitive Reverse Voltage Vrrm Max:1.2kV,Continuous Forward Current If:38A,Total Capacitive Charge Qc:41nC,Diode Case , RoHS Compliant: Yes2042
  • 1:$8.4200
  • 10:$7.6100
  • 25:$7.2600
  • 50:$6.7800
  • 100:$6.3000
  • 250:$6.0200
  • 500:$5.4900
  • 1000:$4.7800
IDM10G120C5XTMA1
DISTI # 726-IDM10G120C5XTMA1
Infineon Technologies AGSchottky Diodes & Rectifiers SIC CHIP/DISCRETE
RoHS: Compliant
4953
  • 1:$8.4200
  • 10:$7.6100
  • 25:$7.2600
  • 100:$6.3000
  • 250:$6.0200
  • 500:$5.4900
  • 1000:$4.7800
  • 2500:$4.6000
IDM10G120C5XTMA1
DISTI # 2780807
Infineon Technologies AGSIC SCHOTTKY DIODE, 1.2KV, 38A, TO-252
RoHS: Compliant
1877
  • 1:£6.6200
  • 5:£6.1700
  • 10:£5.7100
  • 50:£5.3300
  • 100:£4.9500
IDM10G120C5XTMA1
DISTI # C1S322000680072
Infineon Technologies AGRectifier Diodes
RoHS: Compliant
525
  • 250:$5.3860
  • 100:$5.7920
  • 25:$6.5120
  • 10:$6.7810
  • 1:$7.3710
IDM10G120C5XTMA1
DISTI # 2780807
Infineon Technologies AGSIC SCHOTTKY DIODE, 1.2KV, 38A, TO-252
RoHS: Compliant
1867
  • 1:$10.9200
  • 5:$10.2100
  • 10:$9.0300
  • 50:$8.5400
  • 100:$8.1000
  • 250:$7.7000
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IRLR024NTRPBF

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MOSFET 55V 1 N-CH HEXFET 65mOhms 10nC
NSR02100HT1G

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OMO.#: OMO-NSR02100HT1G

Schottky Diodes & Rectifiers SS SOD323 SHKY DIO 100V T
PIC24FJ128GA202-I/SS

Mfr.#: PIC24FJ128GA202-I/SS

OMO.#: OMO-PIC24FJ128GA202-I-SS

16-bit Microcontrollers - MCU 128KB Flsh 8KB RAM 16MIPS Crypto
TPS7B8233QDGNRQ1

Mfr.#: TPS7B8233QDGNRQ1

OMO.#: OMO-TPS7B8233QDGNRQ1

LDO Voltage Regulators LDO VOLTAGE REGULATOR
RCV12062M20JNEA

Mfr.#: RCV12062M20JNEA

OMO.#: OMO-RCV12062M20JNEA

Thick Film Resistors - SMD 0.25w 2.2Mohm 5% 200PPM
CC0603KRX5R8BB105

Mfr.#: CC0603KRX5R8BB105

OMO.#: OMO-CC0603KRX5R8BB105

Multilayer Ceramic Capacitors MLCC - SMD/SMT 1.0uF 25V X5R 10%
KT3225T32768EAW30TAA

Mfr.#: KT3225T32768EAW30TAA

OMO.#: OMO-KT3225T32768EAW30TAA

TCXO Oscillators 32.768kHz 3Volts -40C +85C 3.2x2mm
IRLR024NTRPBF

Mfr.#: IRLR024NTRPBF

OMO.#: OMO-IRLR024NTRPBF-INFINEON-TECHNOLOGIES

MOSFET N-CH 55V 17A DPAK
可用性
庫存:
Available
訂購:
1987
輸入數量:
IDM10G120C5XTMA1的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$6.21
US$6.21
10
US$5.28
US$52.80
100
US$4.58
US$458.00
250
US$4.34
US$1 085.00
500
US$3.90
US$1 950.00
1000
US$3.28
US$3 280.00
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