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PD55003S-E

PD55003S-E
Mfr. #:
PD55003S-E
製造商:
STMicroelectronics
描述:
RF MOSFET Transistors POWER R.F.
生命週期:
製造商新產品
數據表:
PD55003S-E 數據表
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HTML Datasheet:
PD55003S-E DatasheetPD55003S-E Datasheet (P4-P6)PD55003S-E Datasheet (P7-P9)PD55003S-E Datasheet (P10-P12)PD55003S-E Datasheet (P13-P15)PD55003S-E Datasheet (P16-P18)PD55003S-E Datasheet (P19-P21)PD55003S-E Datasheet (P22-P24)PD55003S-E Datasheet (P25-P27)PD55003S-E Datasheet (P28-P29)
ECAD Model:
更多信息:
PD55003S-E 更多信息 PD55003S-E Product Details
產品屬性
屬性值
製造商：
意法半導體
產品分類：
射頻 MOSFET 晶體管
RoHS：
Y
晶體管極性：
N通道
技術：
矽
Id - 連續漏極電流：
2.5 A
Vds - 漏源擊穿電壓：
40 V
獲得：
17 dB
輸出功率：
3 W
最低工作溫度：
- 65 C
最高工作溫度：
+ 150 C
安裝方式：
貼片/貼片
包裝/案例：
PowerSO-10RF-Straight-4
打包：
管子
配置：
單身的
高度：
3.5 mm
長度：
7.5 mm
工作頻率：
1 GHz
系列：
PD55003-E
類型：
射頻功率MOSFET
寬度：
9.4 mm
品牌：
意法半導體
頻道模式：
增強
濕氣敏感：
是的
Pd - 功耗：
31.7 W
產品類別：
射頻 MOSFET 晶體管
出廠包裝數量：
400
子類別：
MOSFET
Vgs - 柵源電壓：
20 V
單位重量：
0.105822 oz
Tags
PD55003S, PD55003, PD5500, PD550, PD55, PD5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans RF MOSFET N-CH 40V 2.5A 3-Pin PowerSO-10RF (Straight lead) Tube
***icroelectronics
3W 12.5V 500MHz LDMOS in PowerSO-10RF plastic package
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***ark
Rf Fet Transistor, 40 V, 2.5 A, 31.7 W, 1 Ghz, Powerso-10Rf Rohs Compliant: Yes
***ure Electronics
PD55003-E Series 500 MHz 3 W N-Channel RF Power Transistor - POWERSO-10RF
***p One Stop
Trans RF MOSFET N-CH 40V 2.5A 3-Pin PowerSO-10RF (Formed lead) Tube
***icroelectronics
3W 12.5V 500MHz LDMOS in PowerSO-10RF plastic package
***roFlash
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***nell
MOSFET, RF, N-CH, 40V, 2.5A, POWERSO; Drain Source Voltage Vds: 40V; Continuous Drain Current Id: 2.5A; Power Dissipation Pd: 31.7W; Operating Frequency Min: -; Operating Frequency Max: 1GHz; RF Transistor Case: PowerSO-10RF;
***icroelectronics
3W 12.5V 500MHz LDMOS in PowerSO-10RF plastic package
***ical
Trans RF MOSFET N-CH 40V 2.5A 3-Pin PowerSO-10RF (Formed lead) T/R
***icroelectronics SCT
RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
*** Stop Electro
RF Power Field-Effect Transistors
***ser
RF Integrated Circuits POWER R.F.
***ure Electronics
N-CHANNEL 40 V 0.045 Ohm 0.75 W Power Mosfet Surface Mount - SOT-23-3
***ical
Trans MOSFET N-CH 40V 3A 3-Pin SOT-23 T/R
***enic
40V 3A 750mW 45m´Î@10V3.9A 3V@250Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS
***icontronic
Power Field-Effect Transistor, 3A I(D), 40V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***ark
N Channel Mosfet, 40V, 3.9A, To-236, Full Reel; Transistor Polarity:n Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:3.9A; On Resistance Rds(On):0.036Ohm; Transistor Mounting:surface Mount; No. Of Pins:3Pins Rohs Compliant: No
***ment14 APAC
MOSFET,N CH,40V,3A,SOT23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:3.9A; Drain Source Voltage Vds:40V; On Resistance Rds(on):36mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:750mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:3A; Power Dissipation Pd:750mW; Voltage Vgs Max:20V
***ure Electronics
Si2318DS Series 40 V 3.9 A 45 mOhm SMT N-Channel MOSFET - SOT-23-3
***icontronic
Power Field-Effect Transistor, 3A I(D), 40V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***ment14 APAC
N CH MOSFET; Transistor Polarity:N Chann; N CH MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:40V; On Resistance Rds(on):36mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:750mW; No. of Pins:3
***ark
Lateral N-Channel Broadband Rf Power Mosfet, 520 Mhz, 3 W, 12.5 V
***W
RF Power Transistor, 0.135 to 0.52 GHz, 3 W, Typ Gain in dB is 15 @ 520 MHz, 12.5 V, SOT1811-1, LDMOS
*** Stop Electro
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***ment14 APAC
MOSFET, N, RF, PLD-1.5; Transistor Type:RF MOSFET; Drain Source Voltage Vds:40V; Continuous Drain Current Id:2A; Power Dissipation Pd:31.25W; RF Transistor Case:PLD-1.5; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Gain:15dB; Output Power:3W; Package / Case:PLD-1.5; Power Dissipation Max:31.25W; Power Dissipation Pd:31.25W; Termination Type:SMD; Transistor Case Style:PLD-1.5; Transistor Polarity:N Channel; Voltage Vds:650mV
***Yang
Transistor: N-MOSFET, unipolar, 30V, 2.7A, 0.1ohm, 1.3W, -55+150 deg.C, SMD, SOT23
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
*** Source Electronics
MOSFET N-CH 30V 2.7A SOT-23-3 / Trans MOSFET N-CH 30V 2.7A 3-Pin SOT-23 T/R
***ure Electronics
Single N-Channel 30 V 154 mOhm 1 nC HEXFET® Power Mosfet - SOT-23
*** Electronics
IRLML2030TRPBF Infineon MOSFET N-Ch 30V 2.7A 3-PinSOT-23 T/R RoHS
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Power dissipation: 1.3 W
***(Formerly Allied Electronics)
MOSFET, 30V, 2.7A, 100 MOHM, 1.0 NC QG,SOT-23
***roFlash
Power Field-Effect Transistor, 2.7A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***ineon
Benefits: RoHS Compliant; Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; SOT-23 Footprint | Target Applications: Battery Protection; DC Switches; Load Switch; Load Switch High Side; Load Switch Low Side
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.7A; On Resistance Rds(On):0.08Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V Rohs Compliant: Yes
***ment14 APAC
MOSFET, N CH, 30V, 2.7A, SOT-23; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.3W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.7A; Power Dissipation Pd:1.3W; Voltage Vgs Max:20V
型號 製造商 描述 庫存 價格
PD55003S-E
DISTI # V79:2366_17782215		STMicroelectronicsTrans RF MOSFET N-CH 40V 2.5A 3-Pin PowerSO-10RF (Straight lead) Tube
RoHS: Compliant		2
  • 10:$11.9949
  • 1:$12.3890
PD55003S-E
DISTI # 497-5298-5-ND		STMicroelectronicsFET RF 40V 500MHZ PWRSO10
RoHS: Compliant
Min Qty: 400
Container: Tube		Temporarily Out of Stock
  • 400:$9.2690
PD55003S-E
DISTI # 26113453		STMicroelectronicsTrans RF MOSFET N-CH 40V 2.5A 3-Pin PowerSO-10RF (Straight lead) Tube
RoHS: Compliant		2
  • 1:$12.3390
PD55003S-E
DISTI # PD55003S-E		STMicroelectronicsTrans MOSFET N-CH 40V 2.5A 4-Pin(2+2Tab) PowerSO-10RF (Straight lead) Tube - Bag (Alt: PD55003S-E)
RoHS: Compliant
Min Qty: 400
Container: Bag		Americas - 0
  • 400:$8.8900
  • 800:$8.4900
  • 1600:$8.0900
  • 2400:$7.6900
  • 4000:$7.5900
PD55003S-E
DISTI # 511-PD55003S-E		STMicroelectronicsRF MOSFET Transistors POWER R.F.
RoHS: Compliant		0
  • 1:$12.5600
  • 10:$11.5500
  • 25:$11.0700
  • 100:$9.7500
  • 250:$9.2700
  • 500:$8.6800
  • 1000:$7.9600
PD55003STR-E
DISTI # 511-PD55003STR-E		STMicroelectronicsRF MOSFET Transistors POWER R.F.
RoHS: Compliant		0
    PD55003S-E
    DISTI # PD55003S-E    		STMicroelectronicsRF POWER TRANSISTOR
    RoHS: Compliant    		0
    • 400:$8.6800
    • 500:$8.2200
    • 1000:$7.8000
    PD55003S-E
    DISTI # C1S730200607625    		STMicroelectronicsTrans RF MOSFET N-CH 40V 2.5A 3-Pin(2+Tab) PowerSO-10RF (Straight lead) Tube
    RoHS: Compliant    		2
    • 1:$12.0450
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    可用性
    庫存:
    396
    訂購:
    2379
    輸入數量:
    PD55003S-E的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$12.56
    US$12.56
    10
    US$11.55
    US$115.50
    25
    US$11.07
    US$276.75
    100
    US$9.75
    US$975.00
    250
    US$9.27
    US$2 317.50
    500
    US$8.68
    US$4 340.00
    1000
    US$7.96
    US$7 960.00
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