SIHD1K4N60E-GE3

Mfr. #:: SIHD1K4N60E-GE3
製造商:: Vishay / Siliconix
描述:: MOSFET 600V Vds 30V Vgs DPAK (TO-252)
生命週期:: 製造商新產品
數據表:: SIHD1K4N60E-GE3 數據表
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更多信息:: SIHD1K4N60E-GE3 更多信息

產品屬性
屬性值

製造商：: 威世

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: TO-252-3

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 600 V

Id - 連續漏極電流：: 4.2 A

Rds On - 漏源電阻：: 1.45 Ohms

Vgs th - 柵源閾值電壓：: 3 V

Vgs - 柵源電壓：: 30 V

Qg - 門電荷：: 7.5 nC

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

Pd - 功耗：: 63 W

配置：: 單身的

頻道模式：: 增強

系列：: E

晶體管類型：: 1 N-Channel E-Series Power MOSFET

品牌：: 威世 / Siliconix

正向跨導 - 最小值：: 0.8 S

秋季時間：: 22 ns

產品類別：: MOSFET

上升時間：: 23 ns

子類別：: MOSFET

典型關斷延遲時間：: 10 ns

典型的開啟延遲時間：: 10 ns

Tags: SIHD1, SIHD, SIH

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIHD1K4N60E-GE3 更多信息

4th Gen E Series MOSFETs: Vishay Semiconductors 4th Gen E Series MOSFETs are low Figure-Of-Merit (FOM) MOSFETs with E series technology. The 4th Gen E series MOSFETs feature low effective capacitance and reduced switching and conduction losses. These MOSFETs are avalanche energy rated (UIS). The 4th Gen MOSFETs are available in TO-220AB, PowerPAK® SO-8L, PowerPAK® 8 x 8, DPAK (TO-252), and Thin-Lead TO-220 FULLPAK packages. Typical applications include server and telecom power supplies, lighting, industrial, Switch Mode Power Supplies (SMPS), and Power Factor Correction (PFC) power supplies.

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

E Series High Voltage MOSFETs: Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Market price

型號	製造商	描述	庫存	價格
SIHD1K4N60E-GE3 DISTI # V99:2348_22712079	Vishay Intertechnologies	E Series Power MOSFET DPAK (TO-252), 1450 m @ 10V	3000	2500:$0.4537 1000:$0.4579 500:$0.5853 100:$0.6969 10:$1.0531 1:$1.2277
SIHD1K4N60E-GE3 DISTI # SIHD1K4N60E-GE3-ND	Vishay Siliconix	MOSFET N-CH DPAK TO-252 RoHS: Compliant Min Qty: 1 Container: Bulk	3015In Stock	5000:$0.4678 2500:$0.4924 1000:$0.5276 500:$0.6683 100:$0.8090 10:$1.0380 1:$1.1600
SIHD1K4N60E-GE3 DISTI # 33076649	Vishay Intertechnologies	E Series Power MOSFET DPAK (TO-252), 1450 m @ 10V	3000	2500:$0.4537 1000:$0.4579 500:$0.5853 100:$0.6969 14:$1.0531
SIHD1K4N60E-GE3 DISTI # SIHD1K4N60E-GE3	Vishay Intertechnologies	- Tape and Reel (Alt: SIHD1K4N60E-GE3) RoHS: Compliant Min Qty: 2000 Container: Reel	Americas - 0	20000:$0.4289 12000:$0.4409 8000:$0.4529 4000:$0.4729 2000:$0.4869
SIHD1K4N60E-GE3 DISTI # 99AC9554	Vishay Intertechnologies	MOSFET, N-CH, 4.2A, 600V, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:4.2A,Drain Source Voltage Vds:600V,On Resistance Rds(on):1.3ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power DissipationRoHS Compliant: Yes	45	500:$0.6430 250:$0.6960 100:$0.7480 50:$0.8240 25:$0.8990 10:$0.9750 1:$1.1800
SIHD1K4N60E-GE3 DISTI # 78-SIHD1K4N60E-GE3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs DPAK (TO-252) RoHS: Compliant	3000	1:$1.1700 10:$0.9650 100:$0.7410 500:$0.6370 1000:$0.5030 2500:$0.4690 5000:$0.4460 10000:$0.4290
SIHD1K4N60E-GE3 DISTI # 3019080	Vishay Intertechnologies	MOSFET, N-CH, 4.2A, 600V, TO-252	45	500:£0.4620 250:£0.5000 100:£0.5370 10:£0.7530 1:£0.9690
SIHD1K4N60E-GE3 DISTI # 3019080	Vishay Intertechnologies	MOSFET, N-CH, 4.2A, 600V, TO-252 RoHS: Compliant	45	1000:$0.5930 500:$0.7490 250:$0.8380 100:$0.9230 25:$1.2500 5:$1.3700

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