FGL40N120ANDTU

Mfr. #:: FGL40N120ANDTU
製造商:: ON Semiconductor / Fairchild
描述:: IGBT Transistors 1200V NPT IGBT
生命週期:: 製造商新產品
數據表:: FGL40N120ANDTU 數據表
交貨:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: IGBT晶體管

RoHS：: Y

技術：: 矽

包裝/案例：: TO-264-3

安裝方式：: 通孔

配置：: 單身的

集電極-發射極電壓 VCEO 最大值：: 1200 V

最大柵極發射極電壓：: 25 V

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

系列：: FGL40N120AND

打包：: 管子

連續集電極電流 Ic 最大值：: 64 A

高度：: 26 mm

長度：: 20 mm

寬度：: 5 mm

品牌：: 安森美半導體/飛兆半導體

產品類別：: IGBT晶體管

出廠包裝數量：: 375

子類別：: IGBT

第 # 部分別名：: FGL40N120ANDTU_NL

單位重量：: 0.239863 oz

Tags: FGL40N120ANDT, FGL40N120AND, FGL40N120AN, FGL40N120A, FGL40N120, FGL40N12, FGL4, FGL

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FGL40N120ANDTU 評級和評論

R***k

The parcel arrived in two weeks. All nominal resistors coincide with the declared, but in some positions there is not enough one resistor (in the photo you can see, instead of 20 pcs.-19 pcs.). Before selling the goods by the seller apparently is not checked or so conceived. The dispute with the seller did not open. Trifle, but the sediment remained. Draw conclusions yourself, buy from such sellers or not, your choice.

2019-06-13

E**i

Good product!

2019-02-11

R***z

Fast shipping

2019-07-06

A***N

From 2 volts holds a 12 volt led strip, vanki in the hut will fall

2019-01-23

FGL40N120ANDTU 描述

***ical: Trans IGBT Chip N-CH 1200V 64A 500000mW 3-Pin(3+Tab) TO-264 Rail

***ure Electronics: FGL40N120AND Series 1200 V 64 A Flange Mount NPT IGBT - TO-264

***nell: IGBT,N CH,FAST,W/DIO,1200V,64A,TO264; Transistor Type: IGBT; DC Collector Current: 64A; Collector Emitter Voltage Vces: 1.2kV; Power Dissipation Pd: 500W; Collector Emitter Voltage V(br); Available until stocks are exhausted

***rchild Semiconductor: Employing NPT technology, Fairchild's AN series of IGBT provides low conduction and switching losses. The AN series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS).

***ical: Trans IGBT Chip N=-CH 1200V 70A 368000mW 3-Pin(3+Tab) TO-264 Rail

***ure Electronics: FGL35N120FTD Series 1200 V 35 A Field Stop Trench IGBT - TO-264 3L

***rchild Semiconductor: Using advanced field stop trench IGBT technology, Fairchild’s 1200V trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder applications.

***ark: Transistor,igbt,n-Chan+Diode,1Kv V(Br)Ces,42A I(C),to-264 Rohs Compliant: Yes

***ure Electronics: FGL60N100BNTD Series 1000 V 60 A Through Hole NPT Trench IGBT - TO-264

***rchild Semiconductor: Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications.

*** Source Electronics: IGBT 1000V 60A 180W TO264 / Trans IGBT Chip N-CH 1000V 60A 180000mW 3-Pin(3+Tab) TO-264 Tube

***ure Electronics: FGL60N100 Series 1000 V 60 A Through Hole NPT Trench IGBT - TO-264-3L

***ark: TRANSISTOR,IGBT,N-CHAN+DIODE,1kV V(BR)CES,60A I(C),TO-264

***rchild Semiconductor: Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications.

***nell: IGBT, NPT, TO-264; Transistor Type:IGBT; Transistor Polarity:NPN; Voltage, Vces:1000V; Current Ic Continuous a Max:60A; Voltage, Vce Sat Max:2.9V; Power Dissipation:180W; Case Style:TO-264; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:1000V; Current Ic @ Vce Sat:60A; Current, Icm Pulsed:120A; Power, Pd:180W; Time, Rise:320ns

***th Star Micro: Trench insulated gate bipolar transistors (IGBTs) with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for Induction Heating ( I-H ) applications Product Highlights: High Speed Switching Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A High Input Impedance Built-in Fast Recovery Diode

***ical: Trans IGBT Chip N=-CH 600V 80A 250000mW 3-Pin(3+Tab) TO-264 Rail

***ource: Discrete, Short Circuit Rated IGBT with Diode; Package: TO-264; No of Pins: 3; Container: Rail

***ure Electronics: SGL50N60RUFD Series 600 V 80 A Flange Mount Short Circuit Rated IGBT -TO-264

***ment14 APAC: SINGLE IGBT, 600V, 80A; Transistor Type:; SINGLE IGBT, 600V, 80A; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:250W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C

***rchild Semiconductor: Fairchild’s RUFD series of Insulated Gate Bipolar Transistors(IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.

***ark: Igbt Single Transistor, 160 A, 2.6 V, 250 W, 600 V, To-264, 3 Rohs Compliant: Yes

***ource: Discrete, High Performance IGBT with Diode; Package: TO-264; No of Pins: 3; Container: Rail

***ical: Trans IGBT Chip N=-CH 600V 160A 250000mW 3-Pin(3+Tab) TO-264 Rail

***ure Electronics: SGL160N60UFD Series 600 V 160 A Flange Mount Ultra-Fast IGBT -TO-264

***nell: IGBT, ULTRAFAST, 600V, 160A, TO-264; DC Collector Current: 160A; Collector Emitter Saturation Voltage Vce(on): 2.6V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-264; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Transistor Type: IGBT

***rchild Semiconductor: Fairchild’s RUFD series of Insulated Gate Bipolar Transistors(IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, UPS and general inverters where short circuit ruggedness is a required feature.

Market price

型號	製造商	描述	庫存	價格
FGL40N120ANDTU DISTI # V99:2348_06359930	ON Semiconductor	N-CH / 40A 1200V UNINPT IGBT	225	1125:$4.1590 750:$4.6210 375:$5.0660 10:$6.3900 1:$7.7660
FGL40N120ANDTU DISTI # V36:1790_06359930	ON Semiconductor	N-CH / 40A 1200V UNINPT IGBT	0
FGL40N120ANDTU DISTI # FGL40N120ANDTU-ND	ON Semiconductor	IGBT 1200V 64A 500W TO264 RoHS: Compliant Min Qty: 1 Container: Tube	114In Stock	1125:$4.8661 750:$5.5870 375:$6.1277 10:$7.7500 1:$8.5800
FGL40N120ANDTU DISTI # 33145060	ON Semiconductor	N-CH / 40A 1200V UNINPT IGBT	3492	500:$4.5837 250:$5.0292 100:$5.2569 25:$6.0588 10:$6.3558 3:$7.0290
FGL40N120ANDTU DISTI # 32405289	ON Semiconductor	N-CH / 40A 1200V UNINPT IGBT	225	1125:$4.1590 750:$4.6210 375:$5.0660 10:$6.3900 2:$7.0600
FGL40N120ANDTU DISTI # FGL40N120ANDTU	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 64A 3-Pin(3+Tab) TO-264 Rail (Alt: FGL40N120ANDTU) RoHS: Compliant Min Qty: 1	Europe - 1211	1000:€3.3900 500:€3.6900 100:€3.7900 50:€3.8900 25:€4.0900 10:€4.2900 1:€4.6900
FGL40N120ANDTU DISTI # FGL40N120ANDTU	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 64A 3-Pin(3+Tab) TO-264 Rail (Alt: FGL40N120ANDTU) RoHS: Compliant Min Qty: 375	Asia - 0	18750:$4.8936 9375:$4.9752 3750:$5.1467 1875:$5.3305 1125:$5.5280 750:$5.7406 375:$5.9702
FGL40N120ANDTU DISTI # FGL40N120ANDTU	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 64A 3-Pin(3+Tab) TO-264 Rail - Bulk (Alt: FGL40N120ANDTU) Min Qty: 66 Container: Bulk	Americas - 0	660:$4.5900 330:$4.6900 198:$4.7900 66:$4.8900 132:$4.8900
FGL40N120ANDTU DISTI # FGL40N120ANDTU	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 64A 3-Pin(3+Tab) TO-264 Rail - Rail/Tube (Alt: FGL40N120ANDTU) RoHS: Compliant Min Qty: 375 Container: Tube	Americas - 0	3750:$4.2127 2250:$4.3194 1500:$4.3747 750:$4.4316 375:$4.4605
FGL40N120ANDTU DISTI # 43K6885	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 64A 3-Pin(3+Tab) TO-264 Rail - Bulk (Alt: 43K6885) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0	500:$5.4300 250:$5.9200 100:$6.1800 50:$6.6300 25:$7.0700 10:$7.4000 1:$8.1500
FGL40N120ANDTU DISTI # 43K6885	ON Semiconductor	SINGLE IGBT, 1.2KV, 64A,DC Collector Current:64A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:500W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes	355	500:$5.4300 250:$5.9200 100:$6.1800 50:$6.6300 25:$7.0700 10:$7.4000 1:$8.1500
FGL40N120ANDTU. DISTI # 29AC6335	Fairchild Semiconductor Corporation	NPTPIGBT TO264 40A 1200V ROHS COMPLIANT: YES	10	3750:$6.6700 2250:$6.8400 1500:$6.9200 750:$7.0100 1:$7.0600
FGL40N120ANDTU DISTI # 512-FGL40N120ANDTU	ON Semiconductor	IGBT Transistors 1200V NPT IGBT RoHS: Compliant	631	1:$8.1600 10:$7.3800 25:$7.0300 100:$6.1100 250:$5.8300 500:$5.3200 1000:$4.9100
FGL40N120ANDTU	ON Semiconductor	FGL40N120AND Series 1200 V 64 A Flange Mount NPT IGBT - TO-264 RoHS: Compliant	25Tube	5:$6.2200 25:$4.9900 100:$4.5400
FGL40N120ANDTU	Fairchild Semiconductor Corporation	Insulated Gate Bipolar Transistor, 64A I(C), 1200V V(BR)CES, N-Channel, TO-264AA RoHS: Compliant	30	1000:$4.9900 500:$5.2500 100:$5.4700 25:$5.7000 1:$6.1400
FGL40N120ANDTU DISTI # 6715408P	ON Semiconductor	TRANSISTOR IGBT N-CH 1.2KV 64A TO264, TU	1265	13:£5.6400
FGL40N120ANDTU DISTI # 6715408	ON Semiconductor	TRANSISTOR IGBT N-CH 1.2KV 64A TO264, EA	489	13:£5.6400 1:£6.0800
FGL40N120ANDTU DISTI # FGL40N120ANDTU	ON Semiconductor	Transistor: IGBT,1.2kV,40A,200W,TO264	94	1:$9.4100 3:$8.0900 10:$6.5000 25:$5.8400
FGL40N120ANDTU DISTI # 1885742	ON Semiconductor	IGBT,N CH,FAST,W/DIO,1200V,64A,TO264 RoHS: Compliant	130	100:£4.2100 50:£4.5400 10:£4.8600 5:£5.6400 1:£6.1800
FGL40N120ANDTU DISTI # XSKDRABS0025226	ON SEMICONDUCTOR	Switching Controller RoHS: Compliant	300 in Stock0 on Order	300:$4.6400 100:$4.9800
FGL40N120ANDTU DISTI # XSFP00000001996	Fairchild Semiconductor Corporation	RoHS: Compliant	725 in Stock0 on Order	725:$11.3100 25:$12.4400
FGL40N120ANDTU DISTI # XSKDRABV0037687	ON SEMICONDUCTOR	RoHS: Compliant	300 in Stock0 on Order	300:$5.6000 83:$6.0000
FGL40N120ANDTU	Fairchild Semiconductor Corporation	Insulated Gate Bipolar Transistor, 64A I(C), 1200V V(BR)CES, N-Channel, TO-264AA RoHS: Compliant	Europe - 1949
FGL40N120ANDTU	ON Semiconductor	IGBT,1200V,NPT	15000	1:$10.0500 100:$6.4100 500:$5.2900 1000:$4.8600

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