IPB60R125CP

IPB60R125CP
Mfr. #:
IPB60R125CP
製造商:
Infineon Technologies
描述:
MOSFET N-Ch 600V 25mA D2PAK-2 CoolMOS CP
生命週期:
製造商新產品
數據表:
IPB60R125CP 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
IPB60R125CP 更多信息
產品屬性
屬性值
製造商:
英飛凌
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
貼片/貼片
包裝/案例:
TO-263-3
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
600 V
Id - 連續漏極電流:
25 A
Rds On - 漏源電阻:
110 mOhms
Vgs th - 柵源閾值電壓:
2.5 V
Vgs - 柵源電壓:
20 V
Qg - 門電荷:
70 nc
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
Pd - 功耗:
208 W
配置:
單身的
頻道模式:
增強
商品名:
酷摩
打包:
捲軸
高度:
4.4 mm
長度:
10 mm
系列:
CoolMOS CE
晶體管類型:
1 N-Channel
類型:
600 V CoolMOS C6 Power Transistor
寬度:
9.25 mm
品牌:
英飛凌科技
秋季時間:
5 ns
產品類別:
MOSFET
上升時間:
5 ns
出廠包裝數量:
1000
子類別:
MOSFET
典型關斷延遲時間:
50 ns
典型的開啟延遲時間:
15 ns
第 # 部分別名:
IPB60R125CPATMA1 IPB6R125CPXT SP000297368
單位重量:
0.139332 oz
Tags
IPB60R125CP, IPB60R125, IPB60R12, IPB60R1, IPB60R, IPB60, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ N-Channel MOSFETs
Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
型號 製造商 描述 庫存 價格
IPB60R125CPATMA1
DISTI # IPB60R125CPATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 600V 25A TO263
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
76In Stock
  • 500:$4.1357
  • 100:$5.1073
  • 10:$6.2280
  • 1:$6.9800
IPB60R125CPATMA1
DISTI # IPB60R125CPATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 600V 25A TO263
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
76In Stock
  • 500:$4.1357
  • 100:$5.1073
  • 10:$6.2280
  • 1:$6.9800
IPB60R125CPATMA1
DISTI # IPB60R125CPATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 600V 25A TO263
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
On Order
  • 1000:$3.3863
IPB60R125CP
DISTI # IPB60R125CP
Infineon Technologies AGTrans MOSFET N-CH 650V 25A 3-Pin TO-263 T/R (Alt: IPB60R125CP)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Asia - 5000
  • 1000:$3.6648
  • 2000:$3.4903
  • 3000:$3.4358
  • 5000:$3.2819
  • 10000:$3.2337
  • 25000:$3.1413
  • 50000:$3.0540
IPB60R125CP
DISTI # SP000297368
Infineon Technologies AGTrans MOSFET N-CH 650V 25A 3-Pin TO-263 T/R (Alt: SP000297368)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 0
  • 1000:€2.9900
  • 2000:€2.8900
  • 4000:€2.7900
  • 6000:€2.5900
  • 10000:€2.3900
IPB60R125CPXT
DISTI # IPB60R125CPATMA1
Infineon Technologies AGTrans MOSFET N-CH 600V 25A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB60R125CPATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$3.0900
  • 2000:$2.9900
  • 4000:$2.8900
  • 6000:$2.7900
  • 10000:$2.6900
IPB60R125CPATMA1
DISTI # 33P7133
Infineon Technologies AGMOSFET, N CHANNEL, 650V, 25A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:25A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.11ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V , RoHS Compliant: Yes0
  • 1:$5.8300
  • 10:$4.9500
  • 25:$4.7300
  • 50:$4.5100
  • 100:$4.2900
  • 250:$4.0700
  • 500:$3.6600
IPB60R125CPATMA1
DISTI # 726-IPB60R125CPATMA1
Infineon Technologies AGMOSFET N-Ch 600V 25mA D2PAK-2 CoolMOS CP
RoHS: Compliant
0
  • 1:$5.8300
  • 10:$4.9500
  • 100:$4.2900
  • 250:$4.0700
  • 500:$3.6600
  • 1000:$3.0800
IPB60R125CP
DISTI # 726-IPB60R125CP
Infineon Technologies AGMOSFET N-Ch 600V 25mA D2PAK-2 CoolMOS CP
RoHS: Compliant
0
    IPB60R125CP
    DISTI # TMOSP9719
    Infineon Technologies AGCoolMOS 600V25A 125mOhm TO263
    RoHS: Compliant
    Stock DE - 0Stock US - 0
    • 1000:$4.5900
    IPB60R125CPInfineon Technologies AGINSTOCK594
      IPB60R125CPATMA1
      DISTI # 1664016
      Infineon Technologies AGMOSFET, N, TO-263
      RoHS: Compliant
      0
      • 1:£4.9300
      • 10:£3.7900
      • 100:£3.2800
      • 250:£3.1100
      • 500:£2.8000
      IPB60R125CPInfineon Technologies AG600V,25A,N-Channel MOSFET500
      • 1:$4.8300
      • 100:$4.0300
      • 500:$3.5500
      • 1000:$3.4500
      圖片 型號 描述
      STB37N60DM2AG

      Mfr.#: STB37N60DM2AG

      OMO.#: OMO-STB37N60DM2AG

      MOSFET Automotive-grade N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFET in a D2PAK package
      STB28N65M2

      Mfr.#: STB28N65M2

      OMO.#: OMO-STB28N65M2

      MOSFET N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in D2PAK package
      STB28N65M2

      Mfr.#: STB28N65M2

      OMO.#: OMO-STB28N65M2-STMICROELECTRONICS

      MOSFET N-CH 650V 20A D2PAK
      STB37N60DM2AG

      Mfr.#: STB37N60DM2AG

      OMO.#: OMO-STB37N60DM2AG-STMICROELECTRONICS

      MOSFET N-CH 600V 28A
      可用性
      庫存:
      Available
      訂購:
      5500
      輸入數量:
      IPB60R125CP的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
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