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IPB60R120P7ATMA1

IPB60R120P7ATMA1
Mfr. #:
IPB60R120P7ATMA1
製造商:
Infineon Technologies
描述:
MOSFET HIGH POWER_NEW
生命週期:
製造商新產品
數據表:
IPB60R120P7ATMA1 數據表
交貨:
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支付:
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ECAD Model:
更多信息:
IPB60R120P7ATMA1 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
TO-263-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
600 V
Id - 連續漏極電流：
26 A
Rds On - 漏源電阻：
100 mOhms
Vgs th - 柵源閾值電壓：
3 V
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
36 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
95 W
配置：
單身的
頻道模式：
增強
打包：
捲軸
晶體管類型：
1 N-Channel
品牌：
英飛凌科技
秋季時間：
6 ns
產品類別：
MOSFET
上升時間：
14 ns
出廠包裝數量：
1000
子類別：
MOSFET
典型關斷延遲時間：
81 ns
典型的開啟延遲時間：
21 ns
第 # 部分別名：
IPB60R120P7 SP001664922
Tags
IPB60R12, IPB60R1, IPB60R, IPB60, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 120 mOhm 36 nC CoolMOS™ Power Mosfet - D2PAK
***ineon
Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
***ark
Mosfet, N-Ch, 600V, 26A, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.1Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipationrohs Compliant: Yes
600V CoolMOS P7 MOSFETs
Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
型號 製造商 描述 庫存 價格
IPB60R120P7ATMA1
DISTI # V72:2272_18787577		Infineon Technologies AGHIGH POWER_NEW950
  • 500:$2.1410
  • 250:$2.4120
  • 100:$2.5400
  • 25:$2.6320
  • 10:$2.9240
  • 1:$3.7796
IPB60R120P7ATMA1
DISTI # V36:1790_18787577		Infineon Technologies AGHIGH POWER_NEW0
  • 1000000:$1.5240
  • 500000:$1.5260
  • 100000:$1.6640
  • 10000:$1.8870
  • 1000:$1.9240
IPB60R120P7ATMA1
DISTI # IPB60R120P7ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1761In Stock
  • 500:$2.3491
  • 100:$2.7595
  • 10:$3.3680
  • 1:$3.7500
IPB60R120P7ATMA1
DISTI # IPB60R120P7ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1761In Stock
  • 500:$2.3491
  • 100:$2.7595
  • 10:$3.3680
  • 1:$3.7500
IPB60R120P7ATMA1
DISTI # IPB60R120P7ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		1000In Stock
  • 5000:$1.7586
  • 2000:$1.8273
  • 1000:$1.9235
IPB60R120P7ATMA1
DISTI # 33092983		Infineon Technologies AGHIGH POWER_NEW1000
  • 1000:$1.6389
IPB60R120P7ATMA1
DISTI # 33590324		Infineon Technologies AGHIGH POWER_NEW1000
  • 1000:$2.7812
IPB60R120P7ATMA1
DISTI # 32928341		Infineon Technologies AGHIGH POWER_NEW950
  • 4:$3.7796
IPB60R120P7ATMA1
DISTI # IPB60R120P7ATMA1		Infineon Technologies AGHIGH POWER_NEW - Tape and Reel (Alt: IPB60R120P7ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 6000:$1.5900
  • 10000:$1.5900
  • 4000:$1.6900
  • 1000:$1.7900
  • 2000:$1.7900
IPB60R120P7ATMA1
DISTI # SP001664922		Infineon Technologies AGHIGH POWER_NEW (Alt: SP001664922)
RoHS: Compliant
Min Qty: 1000		Europe - 0
  • 10000:€1.3900
  • 6000:€1.4900
  • 4000:€1.5900
  • 2000:€1.6900
  • 1000:€1.7900
IPB60R120P7ATMA1
DISTI # 49AC7996		Infineon Technologies AGMOSFET, N-CH, 600V, 26A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:26A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.1ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power DissipationRoHS Compliant: Yes0
  • 500:$2.1900
  • 250:$2.4400
  • 100:$2.5800
  • 50:$2.7100
  • 25:$2.8400
  • 10:$2.9700
  • 1:$3.4900
IPB60R120P7ATMA1
DISTI # 726-IPB60R120P7ATMA1		Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant		17096
  • 1:$3.4600
  • 10:$2.9400
  • 100:$2.5500
  • 250:$2.4200
  • 500:$2.1700
  • 1000:$1.8300
  • 2000:$1.7400
IPB60R120P7ATMA1Infineon Technologies AGSingle N-Channel 600 V 120 mOhm 36 nC CoolMOS Power Mosfet - D2PAK
RoHS: Not Compliant		1000Reel
  • 1000:$1.7000
IPB60R120P7ATMA1
DISTI # 2841644		Infineon Technologies AGMOSFET, N-CH, 600V, 26A, TO-263
RoHS: Compliant		0
  • 1000:$2.6200
  • 500:$2.6700
  • 250:$2.8200
  • 100:$2.9800
  • 10:$3.3700
  • 1:$3.6100
IPB60R120P7ATMA1
DISTI # XSFP00000130966		Infineon Technologies AG 
RoHS: Compliant		2000 in Stock0 on Order
  • 2000:$2.2700
  • 1000:$2.4300
IPB60R120P7ATMA1
DISTI # 2841644		Infineon Technologies AGMOSFET, N-CH, 600V, 26A, TO-2630
  • 500:£1.7000
  • 250:£1.8800
  • 100:£1.9900
  • 10:£2.2900
  • 1:£3.0300
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AD8184ARZ

Mfr.#: AD8184ARZ

OMO.#: OMO-AD8184ARZ

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OMO.#: OMO-MAL225957471E3

 Aluminum Electrolytic Capacitors - Snap In 470uF 450V 20% 105C 3000H 35x45mm
44769-2402

Mfr.#: 44769-2402

OMO.#: OMO-44769-2402-410

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PIC16LF18456-I/SO

Mfr.#: PIC16LF18456-I/SO

OMO.#: OMO-PIC16LF18456-I-SO-MICROCHIP-TECHNOLOGY

 28KB, 2KB RAM, 2xPWMs, Comparator, DAC, 12-bit ADCC, CWG, EUSART, 2 SPI/I2C
AD8184ARZ

Mfr.#: AD8184ARZ

OMO.#: OMO-AD8184ARZ-ANALOG-DEVICES

 Multiplexer Switch ICs 700MHz 5mA Buffered
可用性
庫存:
17
訂購:
2000
輸入數量:
IPB60R120P7ATMA1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$3.46
US$3.46
10
US$2.94
US$29.40
100
US$2.55
US$255.00
250
US$2.42
US$605.00
500
US$2.17
US$1 085.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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