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SIRA04DP-T1-GE3

SIRA04DP-T1-GE3
Mfr. #:
SIRA04DP-T1-GE3
製造商:
Vishay
描述:
MOSFET N-CH 30V 40A PPAK SO-8
生命週期:
製造商新產品
數據表:
SIRA04DP-T1-GE3 數據表
交貨:
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支付:
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ECAD Model:
更多信息:
SIRA04DP-T1-GE3 更多信息
產品屬性
屬性值
Tags
SIRA04, SIRA0, SIRA, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
Semiconcuctor; Mosfet; TrenchFET; N-Channel; 30V; 40A; 2.15mohm @ 10V; PowerPAK SO-8
***ure Electronics
Single N-Channel 30 V 2.15 mOhm TrenchFET Gen IV Power Mosfet - PowerPAK SOIC-8
***et Europe
Trans MOSFET N-CH 30V 35.9A 8-Pin PowerPAK SO T/R
***ark
N-Channel 30-V (D-S) Mosfet Rohs Compliant: Yes
***Components
MOSFET N-CH 30V 35.9A POWERPAK SO8
***an P&S
30V,40A,N-Channel MOSFET
***i-Key
MOSFET N-CH 30V 40A PPAK SO-8
***
N-CHANNEL 30-V (D-S)
***ment14 APAC
MOSFET, 30V, 40A, PPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:27.7W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
型號 製造商 描述 庫存 價格
SIRA04DP-T1-GE3
DISTI # V36:1790_09216068		Vishay IntertechnologiesTrans MOSFET N-CH 30V 35.9A 8-Pin PowerPAK SO EP T/R
RoHS: Compliant		0
  • 3000000:$0.5181
  • 1500000:$0.5183
  • 300000:$0.5305
  • 30000:$0.5498
  • 3000:$0.5529
SIRA04DP-T1-GE3
DISTI # SIRA04DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 40A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2885In Stock
  • 1000:$0.6165
  • 500:$0.7808
  • 100:$0.9452
  • 10:$1.2120
  • 1:$1.3600
SIRA04DP-T1-GE3
DISTI # SIRA04DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 40A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2885In Stock
  • 1000:$0.6165
  • 500:$0.7808
  • 100:$0.9452
  • 10:$1.2120
  • 1:$1.3600
SIRA04DP-T1-GE3
DISTI # SIRA04DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 40A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 15000:$0.5107
  • 6000:$0.5307
  • 3000:$0.5586
SIRA04DP-T1-GE3
DISTI # SIRA04DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 35.9A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIRA04DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 3000
    SIRA04DP-T1-GE3
    DISTI # SIRA04DP-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 35.9A 8-Pin PowerPAK SO T/R (Alt: SIRA04DP-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 30000:€0.4489
    • 18000:€0.4689
    • 12000:€0.5309
    • 6000:€0.6549
    • 3000:€0.9129
    SIRA04DP-T1-GE3
    DISTI # SIRA04DP-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 35.9A 8-Pin PowerPAK SO T/R (Alt: SIRA04DP-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Asia - 0
      SIRA04DP-T1-GE3
      DISTI # 70243884      		Vishay SiliconixSemiconcuctor,Mosfet,TrenchFET,N-Channel,30V,40A,2.15mohm @ 10V,PowerPAK SO-8
      RoHS: Compliant      		0
      • 3000:$0.5720
      SIRA04DP-T1-GE3
      DISTI # 78-SIRA04DP-T1-GE3      		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK SO-8
      RoHS: Compliant      		2992
      • 1:$1.3200
      • 10:$1.0900
      • 100:$0.8390
      • 500:$0.7220
      • 1000:$0.5690
      • 3000:$0.5310
      • 6000:$0.5050
      • 9000:$0.4860
      SIRA04DP-T1-GE3Vishay Intertechnologies 3962
        SIRA04DPT1GE3Vishay IntertechnologiesPower Field-Effect Transistor, 40A I(D), 30V, 0.00215ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
        RoHS: Compliant        		3000
          SIRA04DP-T1-GE3Vishay Intertechnologies30V,40A,N-Channel MOSFET2400
          • 1:$2.4500
          • 100:$0.9800
          • 500:$0.9100
          • 1000:$0.8800
          SIRA04DP-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK SO-8Americas -
            圖片 型號 描述
            SIRA04DP-T1-GE3

            Mfr.#: SIRA04DP-T1-GE3

            OMO.#: OMO-SIRA04DP-T1-GE3

            		 MOSFET 30V Vds 20V Vgs PowerPAK SO-8
            SIRA04DP-T1-GE3-CUT TAPE

            Mfr.#: SIRA04DP-T1-GE3-CUT TAPE

            OMO.#: OMO-SIRA04DP-T1-GE3-CUT-TAPE-1190

            		 全新原裝
            SIRA04DP

            Mfr.#: SIRA04DP

            OMO.#: OMO-SIRA04DP-1190

            		 全新原裝
            SIRA04DP-T1-GE3

            Mfr.#: SIRA04DP-T1-GE3

            OMO.#: OMO-SIRA04DP-T1-GE3-VISHAY

            		 MOSFET N-CH 30V 40A PPAK SO-8
            SIRA04DPT1GE3

            Mfr.#: SIRA04DPT1GE3

            OMO.#: OMO-SIRA04DPT1GE3-1190

            		 Power Field-Effect Transistor, 40A I(D), 30V, 0.00215ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
            可用性
            庫存:
            Available
            訂購:
            4500
            輸入數量:
            SIRA04DP-T1-GE3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
            參考價格（美元）
            數量
            單價
            小計金額
            1
            US$0.80
            US$0.80
            10
            US$0.76
            US$7.58
            100
            US$0.72
            US$71.82
            500
            US$0.68
            US$339.15
            1000
            US$0.64
            US$638.40
            由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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