IRF3315SPBF

Mfr. #:: IRF3315SPBF
製造商:: Infineon Technologies
描述:: MOSFET N-CH 150V 21A D2PAK
生命週期:: 製造商新產品
數據表:: IRF3315SPBF 數據表
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HTML Datasheet:: IRF3315SPBF Datasheet IRF3315SPBF Datasheet (P4-P6)IRF3315SPBF Datasheet (P7-P9)IRF3315SPBF Datasheet (P10-P11)
ECAD Model:

產品屬性
屬性值

製造商: 紅外線

產品分類: FET - 單

打包: 管子

單位重量: 4 g

安裝方式: 貼片/貼片

技術: 矽

通道數: 1 Channel

配置: 單身的

包裝盒: TO-252-3

晶體管型: 1 N-Channel

鈀功耗: 94 W

最高工作溫度: + 175 C

最低工作溫度: - 55 C

秋季時間: 38 ns

上升時間: 32 ns

VGS-柵極-源極-電壓: 20 V

Id 連續漏極電流: 21 A

Vds-漏-源-擊穿電壓: 150 V

VGS-th-Gate-Source-Threshold-Voltage: 4 V

Rds-On-Drain-Source-Resistance: 82 mOhms

晶體管極性: N通道

典型關斷延遲時間: 49 ns

典型開啟延遲時間: 9.6 ns

Qg-門電荷: 95 nC

正向跨導最小值: 17 S

Tags: IRF3315S, IRF3315, IRF331, IRF33, IRF3, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF3315SPBF 描述

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.082Ohm;ID 21A;D2Pak;PD 94W;VGS +/-20V;-55

***ineon SCT: 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***et: Trans MOSFET N-CH 150V 21A 3-Pin(2+Tab) D2PAK

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ment14 APAC: MOSFET, N, 150V, 21A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:150V; On Resistance Rds(on):82mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:84W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:21A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.6°C/W; Package / Case:D2-PAK; Power Dissipation Pd:84W; Power Dissipation Pd:84W; Power Dissipation on 1 Sq. PCB:3.8W; Pulse Current Idm:84A; SMD Marking:IRF3315S; Termination Type:SMD; Voltage Vds:150V; Voltage Vds Typ:150V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

***(Formerly Allied Electronics): AUIRF3315S N-channel MOSFET Transistor; 21 A; 150 V; 3-Pin D2PAK

***ernational Rectifier: Automotive Q101 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package

***ical: Trans MOSFET N-CH 150V 21A Automotive 3-Pin(2+Tab) D2PAK Tube

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 21A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 6.0pF 50Volts C0G +/-0.05pF

***ment14 APAC: MOSFET, N-CH, 150V, 21A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.082ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:94W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C

***ineon: Benefits: Advanced planar technology; Dynamic dV/dT rating; 175C operating temperature; Fast switching; Fully Avalanche Rated; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified

***ark: N CH SMPS MOSFET, HEXFET, 150V, 23A, D2PAK; Transistor Polarity:N Channel; Conti

***ure Electronics: Single N-Channel 150 V 90 mOhm 37 nC HEXFET® Power Mosfet - D2PAK

***ineon SCT: 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ical: Trans MOSFET N-CH 150V 23A 3-Pin(2+Tab) D2PAK T/R

***nell: MOSFET, N-CH, 150V, 23A, TO-263AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 23A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.09ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5.5V; P

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design

***et: N-Channel 150V 22A (Ta) 93W (Tc) Surface Mount D²PAK (TO-263AB)

***i-Key: MOSFET N-CH 150V 22A TO-263AB

***el Electronic: Chip Resistor - Surface Mount 470kOhm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 470K OHM 1% 1/10W 0402

***el Nordic: Contact for details

***i-Key: MOSFET N-CH 150V 16.4A D2PAK

***el Electronic: IC SUPERVISOR 1 CHANNEL 5SSOP

***ser: MOSFETs 150V N-Channel QFET

***emi: N-Channel PowerTrench® MOSFET 150V, 37A, 36mΩ

***ure Electronics: N-Channel 150 V 36 mOhm Surface Mount PowerTrench® Mosfet - TO-263AB

***Yang: Trans MOSFET N-CH 150V 5A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel

***sible Micro: XTR,PWR,MFT,FDB2552,D2PK 150V,37A,N-CHNL MOSFET RDS(on)=36 mOHM,TO-263AB

***r Electronics: Power Field-Effect Transistor, 5A I(D), 150V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, N, SMD, TO-263AB; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:150V; Current, Id Cont:16A; Resistance, Rds On:0.032ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-263AB; Termination Type:SMD

***ineon SCT: -150V, P-Ch, 290 mΩ max, Automotive MOSFET, D2PAK, Gen 5, D2PAK-3, RoHS

***ical: Trans MOSFET P-CH Si 150V 13A Automotive 3-Pin(2+Tab) D2PAK Tube

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 6.2pF 50Volts C0G +/-0.25pF

***ure Electronics: AUIRF6215S Series 150 V 13 A Surface Mount HEXFET® Power Mosfet - D2PAK-3

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 13A I(D), 150V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ineon: Benefits: Advanced planar technology; Dynamic dV/dT rating; 175C operating temperature; Fast switching; Fully Avalanche Rated; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified

Market price

型號	製造商	描述	庫存	價格
IRF3315SPBF DISTI # IRF3315SPBF-ND	Infineon Technologies AG	MOSFET N-CH 150V 21A D2PAK RoHS: Compliant Min Qty: 3200 Container: Tube	Limited Supply - Call
IRF3315SPBF	International Rectifier	RoHS: Not Compliant	3000	1000:$0.8400 500:$0.8900 100:$0.9200 25:$0.9600 1:$1.0400
IRF3315SPBF DISTI # 942-IRF3315SPBF	Infineon Technologies AG	MOSFET 150V 1 N-CH HEXFET 82mOhms 63.3nC RoHS: Compliant	0
IRF3315SPBF	International Rectifier		380
IRF3315SPBF	International Rectifier	RoHS: Compliant	Europe - 1300
IRF3315SPBF DISTI # 8648085	Infineon Technologies AG	MOSFET, N, 150V, 21A, D2-PAK RoHS: Compliant	0	1:$3.6800 10:$3.1200 100:$2.4900 500:$2.1800 1000:$1.8100 2500:$1.7900

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