IKW50N65F5FKSA1

Mfr. #:: IKW50N65F5FKSA1
製造商:: Infineon Technologies
描述:: IGBT Transistors IGBT PRODUCTS
生命週期:: 製造商新產品
數據表:: IKW50N65F5FKSA1 數據表
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更多信息:: IKW50N65F5FKSA1 更多信息

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Tags: IKW50N65F, IKW50N65, IKW50N6, IKW50N, IKW5, IKW

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IKW50N65F5FKSA1 描述

***ical: Trans IGBT Chip N-CH 650V 80A 305000mW Automotive 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: IKW50N65F5 Series 650 V 80 A 305 W Through Hole DuoPack IGBT - PG-TO-247-3

*** Source Electronics: 650V DuoPack IGBT and Diode High speed switching series fifth generation

***ineon: Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding

IKW50N65F5FKSA1 更多信息

TRENCHSTOP™ 5 IGBTs: Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.

TRENCHSTOP™ 5 F5 Discrete IGBTs: Infineon TRENCHSTOP™ 5 F5 Discrete IGBTs are optimized for switching >60kHz to deliver optimum efficiency, bridging the gap between MOSFETs and IGBTs. The F5 series features significantly lower switching losses compared to currently leading solutions. Targeting topologies are boost stages, PFC (AC-DC) stages and high voltage DC-DC topologies commonly found in applications like Uninterruptible Power Supplies, UPS, Inverterized Welding Machines and Switch Mode Power Supplies (SMPS). The 650V TRENCHSTOP™ 5 F5 IGBTs are targeted for low inductance designs in combination with SiC diodes to offer 1% higher efficiency compared to 650V TRENCHSTOP™ 5 H5 family. The F5 products require higher design in effort, but rewards are higher.

Market price

型號	製造商	描述	庫存	價格
IKW50N65F5FKSA1 DISTI # 33145366	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 80A 305000mW 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	270	150:$2.3364 5:$2.6433
IKW50N65F5FKSA1 DISTI # IKW50N65F5FKSA1-ND	Infineon Technologies AG	IGBT 650V 80A 305W PG-TO247-3 RoHS: Compliant Min Qty: 1 Container: Tube	On Order	2640:$2.5351 720:$3.1562 240:$3.7076 25:$4.2780 10:$4.5250 1:$5.0400
IKW50N65F5FKSA1 DISTI # V99:2348_06378386	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 80A 305000mW 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	0	500:$2.8080 250:$3.1380 100:$3.3240 10:$3.8200 1:$4.4640
IKW50N65F5FKSA1 DISTI # V36:1790_06378386	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 80A 305000mW 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	0
IKW50N65F5FKSA1 DISTI # IKW50N65F5FKSA1	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: IKW50N65F5FKSA1) RoHS: Compliant Min Qty: 240 Container: Tube	Americas - 0	1440:$2.2900 2400:$2.2900 960:$2.3900 480:$2.4900 240:$2.5900
IKW50N65F5FKSA1 DISTI # IKW50N65F5	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube (Alt: IKW50N65F5) RoHS: Compliant Min Qty: 240 Container: Tube	Asia - 0
IKW50N65F5FKSA1 DISTI # SP000973420	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube (Alt: SP000973420) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	50:€1.9900 100:€1.9900 500:€1.9900 1000:€1.9900 25:€2.0900 1:€2.1900 10:€2.1900
IKW50N65F5FKSA1 DISTI # 33X0415	Infineon Technologies AG	IGBT, 650V, 80A, 175DEG C, 305W, TO-247,DC Collector Current:80A,Collector Emitter Saturation Voltage Vce(on):1.6V,Power Dissipation Pd:305W,Collector Emitter Voltage V(br)ceo:650V,No. of Pins:3Pins,MSL:- RoHS Compliant: Yes	130	100:$4.5700 50:$4.7800 25:$5.0000 10:$5.2100 1:$6.0600
IKW50N65F5FKSA1 DISTI # 726-IKW50N65F5FKSA1	Infineon Technologies AG	IGBT Transistors IGBT PRODUCTS RoHS: Compliant	127	1:$4.7900 10:$4.0700 100:$3.5300 250:$3.3500 500:$3.0000
IKW50N65F5 DISTI # 726-IKW50N65F5-ES	Infineon Technologies AG	IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT RoHS: Compliant	0	240:$3.5300 480:$3.3500 720:$3.0000
IKW50N65F5FKSA1 DISTI # 1109112P	Infineon Technologies AG	IGBT TRENCHSTOP N-CHANNEL 650V 50A TO247, TU	2	200:£2.3680 80:£2.5950 40:£2.7150 8:£2.9880
IKW50N65F5FKSA1 DISTI # 2363295	Infineon Technologies AG	IGBT, 650V, 50A, TO247-3	182	500:£2.3700 250:£2.6500 100:£2.7900 10:£3.2100 1:£4.2100
IKW50N65F5FKSA1 DISTI # IKW50N65F5	Infineon Technologies AG	650V 80A 305W TO247 RoHS: Compliant	150	1:€5.9000 10:€2.9000 50:€1.9000 100:€1.8300

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