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| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| BUZ31 H3045A DISTI # BUZ31H3045ACT-ND | Infineon Technologies AG | MOSFET N-CH 200V 14.5A TO263 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 1076In Stock |
|
| BUZ31 H3045A DISTI # BUZ31H3045ADKR-ND | Infineon Technologies AG | MOSFET N-CH 200V 14.5A TO263 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 1076In Stock |
|
| BUZ31 H3045A DISTI # BUZ31H3045ATR-ND | Infineon Technologies AG | MOSFET N-CH 200V 14.5A TO263 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | 1000In Stock |
|
| BUZ31 H3045A DISTI # 726-BUZ31H3045A | Infineon Technologies AG | MOSFET N-Ch 200V 14.5A D2PAK-2 RoHS: Compliant | 0 |
| 圖片 | 型號 | 描述 |
|---|---|---|
|
Mfr.#: BUZ31 OMO.#: OMO-BUZ31 |
MOSFET N-Ch 200V 14.5A TO220-3 |
|
Mfr.#: BUZ31 E3045A |
MOSFET N-CH 200V 14.5A TO263 |
|
Mfr.#: BUZ31 E3046 |
MOSFET N-CH 200V 14.5A TO262-3 |
|
Mfr.#: BUZ31 L3045A OMO.#: OMO-BUZ31-L3045A-1190 |
全新原裝 |
|
|
Mfr.#: BUZ31-E3045A OMO.#: OMO-BUZ31-E3045A-1190 |
全新原裝 |
|
|
Mfr.#: BUZ311 OMO.#: OMO-BUZ311-1190 |
Power Field-Effect Transistor, 2.5A I(D), 1000V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA |
|
|
Mfr.#: BUZ31H3045A OMO.#: OMO-BUZ31H3045A-1190 |
全新原裝 |
|
|
Mfr.#: BUZ31H3046 OMO.#: OMO-BUZ31H3046-1190 |
Power Transistor N Channel Enhancement 200V 14.5A 3-Pin TO-262 Through Hole - Bulk (Alt: BUZ31H3046) |
|
Mfr.#: BUZ31H3046XKSA1 |
MOSFET N-CH 200V 14.5A TO262-3 |
|
|
Mfr.#: BUZ31L |
MOSFET N-CH 200V 13.5A TO220AB |