SIR836DP-T1-GE3

SIR836DP-T1-GE3
Mfr. #:
SIR836DP-T1-GE3
製造商:
Vishay
描述:
MOSFET N-CH 40V 21A PPAK SO-8
生命週期:
製造商新產品
數據表:
SIR836DP-T1-GE3 數據表
交貨:
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支付:
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ECAD Model:
產品屬性
屬性值
製造商
威世矽
產品分類
FET - 單
系列
溝槽FETR
打包
Digi-ReelR 替代包裝
部分別名
SIR836DP-GE3
單位重量
0.017870 oz
安裝方式
貼片/貼片
包裝盒
PowerPAKR SO-8
技術
工作溫度
-55°C ~ 150°C (TJ)
安裝型
表面貼裝
通道數
1 Channel
供應商-設備-包
PowerPAKR SO-8
FET型
MOSFET N 溝道,金屬氧化物
最大功率
15.6W
晶體管型
1 N-Channel
漏源電壓 Vdss
40V
輸入電容-Ciss-Vds
600pF @ 20V
FET-Feature
標準
Current-Continuous-Drain-Id-25°C
21A (Tc)
Rds-On-Max-Id-Vgs
19 mOhm @ 10A, 10V
Vgs-th-Max-Id
2.5V @ 250μA
柵極電荷-Qg-Vgs
18nC @ 10V
鈀功耗
15.6 W
最高工作溫度
+ 150 C
最低工作溫度
- 55 C
VGS-柵極-源極-電壓
20 V
Id 連續漏極電流
21 A
Vds-漏-源-擊穿電壓
40 V
Rds-On-Drain-Source-Resistance
19 mOhms
晶體管極性
N通道
Tags
SIR836DP-T, SIR836, SIR83, SIR8, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
SiR836DP Series N-Channel 40 V 0.0225 Ohm 15.6 W SMT Mosfet - PowerPAK SO-8
***et Europe
Trans MOSFET N-CH 40V 10.6A 8-Pin PowerPAK SO T/R
***ical
Trans MOSFET N-CH 40V 21A 8-Pin PowerPAK SO T/R
***i-Key
MOSFET N-CH 40V 21A PPAK SO-8
***ark
N-CHANNEL 40-V (D-S) MOSFET
***
N-CHANNEL 40-V (D-S)
型號 製造商 描述 庫存 價格
SIR836DP-T1-GE3
DISTI # SIR836DP-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 40V 21A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
On Order
  • 3000:$0.3350
SIR836DP-T1-GE3
DISTI # SIR836DP-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 40V 21A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 1000:$0.3807
  • 500:$0.4759
  • 100:$0.6424
  • 10:$0.8330
  • 1:$0.9500
SIR836DP-T1-GE3
DISTI # SIR836DP-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 40V 21A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 1000:$0.3807
  • 500:$0.4759
  • 100:$0.6424
  • 10:$0.8330
  • 1:$0.9500
SIR836DP-T1-GE3
DISTI # SIR836DP-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 40V 10.6A 8-Pin PowerPAK SO T/R (Alt: SIR836DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 0
    SIR836DP-T1-GE3
    DISTI # SIR836DP-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N-CH 40V 10.6A 8-Pin PowerPAK SO T/R (Alt: SIR836DP-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel
    Europe - 0
    • 3000:€0.6559
    • 6000:€0.4469
    • 12000:€0.3849
    • 18000:€0.3549
    • 30000:€0.3309
    SIR836DP-T1-GE3
    DISTI # SIR836DP-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N-CH 40V 10.6A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR836DP-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel
    Americas - 0
    • 3000:$0.3049
    • 6000:$0.2959
    • 12000:$0.2839
    • 18000:$0.2759
    • 30000:$0.2689
    SIR836DP-T1-GE3
    DISTI # 05W6931
    Vishay IntertechnologiesMOSFET, N CHANNEL, 40V, 21A, POWERPAK SO-8,Transistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.015ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V , RoHS Compliant: Yes0
    • 1:$0.6070
    • 10:$0.5880
    • 100:$0.4650
    • 250:$0.4410
    • 500:$0.4120
    • 1000:$0.3300
    SIR836DP-T1-GE3
    DISTI # 86R3808
    Vishay IntertechnologiesMOSFET, N CHANNEL, 40V, 21A, POWERPAK SO-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.015ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins , RoHS Compliant: Yes0
    • 1:$0.3110
    • 3000:$0.3090
    • 6000:$0.2940
    • 12000:$0.2610
    SIR836DP-T1-GE3
    DISTI # 78-SIR836DP-T1-GE3
    Vishay IntertechnologiesMOSFET 40V Vds 20V Vgs PowerPAK SO-8
    RoHS: Compliant
    446
    • 1:$0.8400
    • 10:$0.6700
    • 100:$0.5090
    • 500:$0.4200
    • 1000:$0.3360
    • 3000:$0.3050
    • 6000:$0.2840
    SIR836DPT1GE3Vishay Intertechnologies 
    RoHS: Compliant
    Europe - 3000
      SIR836DP-T1-GE3Vishay IntertechnologiesMOSFET 40V Vds 20V Vgs PowerPAK SO-8
      RoHS: Compliant
      Americas - 51000
        圖片 型號 描述
        SIR836DP-T1-GE3

        Mfr.#: SIR836DP-T1-GE3

        OMO.#: OMO-SIR836DP-T1-GE3

        MOSFET 40V Vds 20V Vgs PowerPAK SO-8
        SIR836DP-T1-GE3-CUT TAPE

        Mfr.#: SIR836DP-T1-GE3-CUT TAPE

        OMO.#: OMO-SIR836DP-T1-GE3-CUT-TAPE-1190

        全新原裝
        SIR836DP

        Mfr.#: SIR836DP

        OMO.#: OMO-SIR836DP-1190

        全新原裝
        SIR836DP-T1-E3

        Mfr.#: SIR836DP-T1-E3

        OMO.#: OMO-SIR836DP-T1-E3-1190

        全新原裝
        SIR836DP-T1-GE3

        Mfr.#: SIR836DP-T1-GE3

        OMO.#: OMO-SIR836DP-T1-GE3-VISHAY

        MOSFET N-CH 40V 21A PPAK SO-8
        SIR836DPT1GE3

        Mfr.#: SIR836DPT1GE3

        OMO.#: OMO-SIR836DPT1GE3-1190

        Power Field-Effect Transistor, 21A I(D), 40V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
        可用性
        庫存:
        Available
        訂購:
        3500
        輸入數量:
        SIR836DP-T1-GE3的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
        參考價格(美元)
        數量
        單價
        小計金額
        1
        US$0.36
        US$0.36
        10
        US$0.35
        US$3.45
        100
        US$0.33
        US$32.71
        500
        US$0.31
        US$154.50
        1000
        US$0.29
        US$290.80
        由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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