FD150R12RT4

Mfr. #:: FD150R12RT4
製造商:: Infineon Technologies
描述:: IGBT Modules IGBT 1200V 150A
生命週期:: 製造商新產品
數據表:: FD150R12RT4 數據表
交貨:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

產品屬性
屬性值

製造商：: 英飛凌

產品分類：: IGBT 模塊

RoHS：: Y

集電極-發射極電壓 VCEO 最大值：: 1200 V

集電極-發射極飽和電壓：: 2.15 V

25 C 時的連續集電極電流：: 150 A

柵極-發射極漏電流：: 100 nA

Pd - 功耗：: 790 W

最低工作溫度：: - 40 C

最高工作溫度：: + 150 C

打包：: 托盤

品牌：: 英飛凌科技

安裝方式：: 貼片/貼片

最大柵極發射極電壓：: 20 V

產品類別：: IGBT 模塊

出廠包裝數量：: 10

子類別：: IGBT

第 # 部分別名：: FD150R12RT4HOSA1 SP000711858

單位重量：: 5.361642 oz

Tags: FD150R12, FD150R, FD150, FD15, FD1

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

型號	製造商	描述	庫存	價格
FD150R12RT4HOSA1 DISTI # V99:2348_18204841	Infineon Technologies AG	Trans IGBT Module N-CH 1.2KV 150A 5-Pin Tray RoHS: Compliant	10	10:$51.8000 1:$55.4200
FD150R12RT4HOSA1 DISTI # FD150R12RT4HOSA1-ND	Infineon Technologies AG	IGBT MODULE 1200V 150A RoHS: Compliant Min Qty: 1 Container: Bulk	14In Stock	10:$53.6290 1:$57.0900
FD150R12RT4HOSA1 DISTI # 27577031	Infineon Technologies AG	Trans IGBT Module N-CH 1.2KV 150A 5-Pin Tray RoHS: Compliant	10	10:$51.8000 1:$55.4200
FD150R12RT4 DISTI # SP000711858	Infineon Technologies AG	Trans IGBT Module N-CH 1.2KV 150A 5-pin 34MM-1 (Alt: SP000711858) RoHS: Compliant Min Qty: 1	Europe - 8	1:€59.5900 10:€48.1900 25:€43.7900 50:€42.2900 100:€40.8900 500:€39.6900 1000:€38.7900
FD150R12RT4 DISTI # FD150R12RT4	Infineon Technologies AG	Trans IGBT Module N-CH 1.2KV 150A 5-pin 34MM-1 (Alt: FD150R12RT4) RoHS: Compliant Min Qty: 10	Asia - 0	10:$47.0743 20:$45.7667 30:$44.5297 50:$43.3579 100:$42.7948 250:$42.2462 500:$41.7114
FD150R12RT4HOSA1 DISTI # FD150R12RT4HOSA1	Infineon Technologies AG	MEDIUM POWER 34MM - Trays (Alt: FD150R12RT4HOSA1) RoHS: Compliant Min Qty: 10 Container: Tray	Americas - 0	10:$47.3900 12:$45.6900 22:$44.0900 50:$42.5900 100:$41.7900
FD150R12RT4HOSA1 DISTI # FD150R12RT4HOSA1	Infineon Technologies AG	MEDIUM POWER 34MM - Bulk (Alt: FD150R12RT4HOSA1) Min Qty: 9 Container: Bulk	Americas - 0	9:$44.2900 11:$42.6900 20:$41.0900 45:$39.6900 90:$38.9900
FD150R12RT4HOSA1 DISTI # SP000711858	Infineon Technologies AG	MEDIUM POWER 34MM (Alt: SP000711858) RoHS: Compliant Min Qty: 1	Europe - 0	1:€50.8900 10:€46.5900 25:€44.7900 50:€42.9900 100:€41.3900 500:€39.9900 1000:€37.2900
FD150R12RT4 DISTI # 84R7176	Infineon Technologies AG	IGBT Module, 1.2KV, 150A, MODULE,Transistor Polarity:N Channel,DC Collector Current:150A,Collector Emitter Saturation Voltage Vce(on):2.05V,Power Dissipation Pd:790W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:5Pins RoHS Compliant: Yes	0
FD150R12RT4 DISTI # 641-FD150R12RT4	Infineon Technologies AG	IGBT Modules IGBT 1200V 150A RoHS: Compliant	24	1:$54.3700 5:$53.1500 10:$51.0800 25:$49.4300 100:$45.8100
FD150R12RT4HOSA1	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel RoHS: Compliant	1183	1000:$40.4700 500:$42.6000 100:$44.3600 25:$46.2600 1:$49.8100