GS881E32CGD-200

GS881E32CGD-200
Mfr. #:
GS881E32CGD-200
製造商:
GSI Technology
描述:
SRAM 2.5 or 3.3V 256K x 32 8M
生命週期:
製造商新產品
數據表:
GS881E32CGD-200 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
GS881E32CGD-200 更多信息
產品屬性
屬性值
製造商:
GSI技術
產品分類:
靜態隨機存取存儲器
RoHS:
Y
內存大小:
9 Mbit
組織:
256 k x 32
訪問時間:
6.5 ns
最大時鐘頻率:
200 MHz
接口類型:
平行線
電源電壓 - 最大值:
3.6 V
電源電壓 - 最小值:
2.3 V
電源電流 - 最大值:
140 mA, 170 mA
最低工作溫度:
0 C
最高工作溫度:
+ 70 C
安裝方式:
貼片/貼片
包裝/案例:
BGA-165
打包:
托盤
內存類型:
特別提款權
系列:
GS881E32CGD
類型:
DCD 管道/流通
品牌:
GSI技術
濕氣敏感:
是的
產品類別:
靜態隨機存取存儲器
出廠包裝數量:
72
子類別:
內存和數據存儲
商品名:
同步突發
Tags
GS881E32CGD-20, GS881E32CGD-2, GS881E32CGD, GS881E32CG, GS881E32C, GS881E32, GS881E3, GS881E, GS881, GS88, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
SRAM Chip Sync Quad 2.5V/3.3V 8M-Bit 256K x 32 6.5ns/3ns 165-Pin FBGA Tray
*** Services
CoC and 2-years warranty / RFQ for pricing
***ure Electronics
CY62157EV30 Series 8 Mb (512 K x 16) 2.2 - 3.6 V 45 ns Static RAM - VFBGA-48
***el Electronic
CYPRESS SEMICONDUCTOR - CY62157EV30LL-45BVXI - IC, SRAM, 8MB, 512KX16, 3V, VFBGA48
***ment14 APAC
IC, SRAM, 8MB, 512KX16, 3V, VFBGA48; Memory Size:8Mbit; Memory Configuration:512K x 16; Access Time:45ns; Supply Voltage Range:2.2V to 3.6V; Memory Case Style:FBGA; No. of Pins:48; Operating Temperature Range:-40°C to +85°C; SVHC:No SVHC (20-Jun-2011); Frequency:1MHz; Memory Configuration:512K x 16; Memory Size:8Mbit; Memory Type:SRAM; Memory Voltage Vcc:3V; Package / Case:FBGA; Supply Voltage Max:3.6V; Supply Voltage Min:2.2V; Termination Type:SMD
***se
8Mb LP SRAM 512K x 16 2.7 ~ 3.6V 48ball TFBGA (8 x 10mm) 55ns Industrial Temp
***et
SRAM Chip Async Single 3.3V 8M-Bit 512K x 16 55ns 48-Pin FBGA
***-Wing Technology
Surface Mount Tray SRAM - Asynchronous SRAM ic memory 55ns 0.75mm 8Mb 2.7V
***i-Key
IC SRAM 8MBIT PARALLEL 48FPBGA
***et
SRAM Chip Sync Quad 3.3V 9M-Bit 256K x 36 3.1ns 165-Pin BGA
*** Stop Electro
ZBT SRAM, 256KX36, 3.1ns, CMOS, PBGA165
***or
IC SRAM 9MBIT PARALLEL 165TFBGA
***hard Electronics
Standard SRAM, 512KX16, 70ns, CMOS, PBGA48, 6 X 10 MM, 1.20 MM HEIGHT, FBGA-48
***et
SRAM Chip Async Single 3.3V 8M-Bit 512K x 16 70ns 48-Pin FBGA
***ponent Stockers USA
512K X 16 STANDARD SRAM 70 ns PBGA48
***S
French Electronic Distributor since 1988
***ure Electronics
CY7C1354CV25 9 Mb (256 K x 36) 166 MHz 2.5 V Pipelined SRAM - FBGA-165
***ress Semiconductor SCT
Synchronous SRAM, NoBL, Pipeline, 9216 Kb Density, 166 MHz Frequency, BGA-165
***ical
SRAM Chip Sync Quad 2.5V 9M-bit 256K x 36 3.5ns 165-Pin FBGA Tray
***-Wing Technology
3A991.B.2.A Surface Mount CY7C1354 Tray ic memory 166MHz 3.5ns 15mm 180mA
***ponent Stockers USA
256K X 36 ZBT SRAM 3.5 ns PBGA165
***i-Key
IC SRAM 9MBIT PARALLEL 165FBGA
***pmh
STANDARD SRAM, 512KX16, 55NS PBG
SyncBurst SRAMs
GSI Technology SyncBurst SRAMs are a broad portfolio of Synchronous Burst (SyncBurst™) SRAMs with fast clock rates and low power. SyncBurst SRAMs provide a "burst" of (typically) 2 to 4 words in response to a single clock signal. The devices' simplified interface is designed to use a data bus's maximum bandwidth. SyncBurst SRAMs are used in military, networking, industrial, automotive and medical imaging applications where a mid-range performance point is required.Learn More
圖片 型號 描述
GS881E32CGT-250

Mfr.#: GS881E32CGT-250

OMO.#: OMO-GS881E32CGT-250

SRAM 2.5 or 3.3V 256K x 32 8M
GS881E36CGD-150

Mfr.#: GS881E36CGD-150

OMO.#: OMO-GS881E36CGD-150

SRAM 2.5 or 3.3V 256K x 36 9M
GS881E36CGD-200

Mfr.#: GS881E36CGD-200

OMO.#: OMO-GS881E36CGD-200

SRAM 2.5 or 3.3V 256K x 36 9M
GS881E32CD-150I

Mfr.#: GS881E32CD-150I

OMO.#: OMO-GS881E32CD-150I

SRAM 2.5 or 3.3V 256K x 32 8M
GS881E36CD-300

Mfr.#: GS881E36CD-300

OMO.#: OMO-GS881E36CD-300

SRAM 2.5 or 3.3V 256K x 32 8M
GS881E32CGD-333

Mfr.#: GS881E32CGD-333

OMO.#: OMO-GS881E32CGD-333

SRAM 2.5 or 3.3V 256K x 32 8M
GS881E36CGD-250I

Mfr.#: GS881E36CGD-250I

OMO.#: OMO-GS881E36CGD-250I

SRAM 2.5 or 3.3V 256K x 36 9M
GS881E32CD-150IV

Mfr.#: GS881E32CD-150IV

OMO.#: OMO-GS881E32CD-150IV

SRAM 1.8/2.5V 256K x 32 8M
GS881E36CGT-250IV

Mfr.#: GS881E36CGT-250IV

OMO.#: OMO-GS881E36CGT-250IV

SRAM 1.8/2.5V 256K x 36 9M
GS881E32CGD-150

Mfr.#: GS881E32CGD-150

OMO.#: OMO-GS881E32CGD-150

SRAM 2.5 or 3.3V 256K x 32 8M
可用性
庫存:
Available
訂購:
2000
輸入數量:
GS881E32CGD-200的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$9.00
US$9.00
25
US$8.36
US$209.00
由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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