FDP8D5N10C

Mfr. #:: FDP8D5N10C
製造商:: ON Semiconductor
描述:: MOSFET FET 100V 76A 8.5 mOhm
生命週期:: 製造商新產品
數據表:: FDP8D5N10C 數據表
交貨:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 通孔

包裝/案例：: TO-220-3

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 100 V

Id - 連續漏極電流：: 76 A

Rds On - 漏源電阻：: 8.5 mOhms

Vgs th - 柵源閾值電壓：: 2 V

Vgs - 柵源電壓：: 20 V

Qg - 門電荷：: 34 nC

最低工作溫度：: - 55 C

最高工作溫度：: + 175 C

Pd - 功耗：: 107 W

配置：: 單身的

頻道模式：: 增強

打包：: 管子

品牌：: 安森美半導體

正向跨導 - 最小值：: 68 S

秋季時間：: 4 ns

產品類別：: MOSFET

上升時間：: 11 ns

出廠包裝數量：: 800

子類別：: MOSFET

典型關斷延遲時間：: 18 ns

典型的開啟延遲時間：: 12 ns

Tags: FDP8, FDP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDP8D5N10C 描述

***et Japan: Transistor MOSFET N-CH 100V 76A 3-Pin TO-220 T/R

***emi: N-Channel PowerTrench® MOSFET, Shielded Gate, 100V, 76A, 8.5mΩ N-Channel Shielded Gate PowerTrench® MOSFET, 100V, 76A, 8.5mΩ

*** Stop Electro: Power Field-Effect Transistor, 76A I(D), 100V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Market price

型號	製造商	描述	庫存	價格
FDP8D5N10C DISTI # V99:2348_21690361	ON Semiconductor	FET ENGR DEV-NOT REL	730	250:$2.5430 100:$2.7050 10:$3.1420 1:$4.1074
FDP8D5N10C DISTI # V36:1790_21690361	ON Semiconductor	FET ENGR DEV-NOT REL	0
FDP8D5N10C DISTI # FDP8D5N10C-ND	ON Semiconductor	FET ENGR DEV-NOT REL RoHS: Not compliant Min Qty: 800 Container: Tube	Temporarily Out of Stock	800:$2.4784
FDP8D5N10C DISTI # 32434297	ON Semiconductor	FET ENGR DEV-NOT REL	2400	800:$2.6037
FDP8D5N10C DISTI # 31442392	ON Semiconductor	FET ENGR DEV-NOT REL	730	500:$2.4306 250:$2.7337 100:$2.9079 10:$3.3777 4:$4.4155
FDP8D5N10C DISTI # FDP8D5N10C	ON Semiconductor	Shielded Gate PowerTrench MOSFET N-Channel 100V 76A 8.5m Ohm 3-Pin TO-220 Tube - Rail/Tube (Alt: FDP8D5N10C) RoHS: Compliant Min Qty: 800 Container: Tube	Americas - 0	4800:$1.6900 8000:$1.6900 800:$1.7900 1600:$1.7900 3200:$1.7900
FDP8D5N10C DISTI # 65AC4708	ON Semiconductor	FDP8D5N10C	0	500:$1.8500 250:$1.9100 100:$2.2800 50:$2.6300 25:$2.8100 10:$3.2000 1:$3.7000
FDP8D5N10C DISTI # 863-FDP8D5N10C	ON Semiconductor	MOSFET FET 100V 76A 8.5 mOhm RoHS: Compliant	349	1:$3.7600 10:$3.1900 100:$2.7700 250:$2.6300 500:$2.3600 1000:$1.9900 2500:$1.8900
FDP8D5N10C DISTI # 1811860	ON Semiconductor	FET 100V 8.5 MOHM, TU	800	1600:£1.6080 800:£1.7430

相關產品

圖片	型號	描述
	Mfr.#: AT24CM02-SSHD-T OMO.#: OMO-AT24CM02-SSHD-T	EEPROM 2.5-5.5V, 1MHz, Ind Tmp, 8-SOIC-N
	Mfr.#: SIHG47N60AEF-GE3 OMO.#: OMO-SIHG47N60AEF-GE3	MOSFET 600V Vds 30V Vgs TO-247AC
	Mfr.#: RB168MM150TFTR OMO.#: OMO-RB168MM150TFTR	Schottky Diodes & Rectifiers 150V VR 1A 0.84V VF PMDU; SOD-123FL
	Mfr.#: V30100CI-M3/P OMO.#: OMO-V30100CI-M3-P	Schottky Diodes & Rectifiers 100V 30A TO-220AB TMBS
	Mfr.#: SRP2313AA-220M OMO.#: OMO-SRP2313AA-220M	Fixed Inductors 22uH 20% 18A AEC-Q200
	Mfr.#: PA-T2X-38E OMO.#: OMO-PA-T2X-38E	Heat Sinks 38mm Heatsink Anodized
	Mfr.#: SRP2313AA-100M OMO.#: OMO-SRP2313AA-100M	Fixed Inductors 10uH 20% 30A AEC-Q200
	Mfr.#: VS-8TQ100-M3 OMO.#: OMO-VS-8TQ100-M3-VISHAY	DIODE SCHOTTKY 100V 8A TO220AC
	Mfr.#: RB168MM150TFTR OMO.#: OMO-RB168MM150TFTR-ROHM-SEMI	RB168MM150TF IS THE HIGH RELIABI
	Mfr.#: AT24CM02-SSHD-T OMO.#: OMO-AT24CM02-SSHD-T-MICROCHIP-TECHNOLOGY	IC EEPROM 2M I2C 1MHZ 8SOIC