NE3515S02-A

NE3515S02-A
Mfr. #:
NE3515S02-A
製造商:
CEL
描述:
RF JFET Transistors X to Ku-BAND SUPER LOW NOISE AMP N-CH
生命週期:
製造商新產品
數據表:
NE3515S02-A 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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HTML Datasheet:
NE3515S02-A DatasheetNE3515S02-A Datasheet (P4-P6)NE3515S02-A Datasheet (P7-P9)
ECAD Model:
產品屬性
屬性值
製造商:
電燈
產品分類:
射頻 JFET 晶體管
RoHS:
Y
晶體管類型:
pHEMT
技術:
砷化鎵
獲得:
12.5 dB
Vds - 漏源擊穿電壓:
4 V
Vgs - 柵源擊穿電壓:
- 3 V
Id - 連續漏極電流:
88 mA
最高工作溫度:
+ 125 C
Pd - 功耗:
165 mW
安裝方式:
貼片/貼片
包裝/案例:
S0-2
打包:
剪膠帶
工作頻率:
12 GHz
產品:
射頻結型場效應管
類型:
GaAs pHEMT
品牌:
電燈
正向跨導 - 最小值:
70 mS
NF - 噪聲係數:
0.3 dB
P1dB - 壓縮點:
14 dBm
產品類別:
射頻 JFET 晶體管
出廠包裝數量:
1
子類別:
晶體管
Tags
NE3515, NE351, NE35, NE3
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans FET N-CH 4V 88mA 4-Pin Case S-02
***et
Trans JFET N-CH 4V 88mA 4-Pin Micro-X
***i-Key
FET RF HFET 12GHZ 2V 10MA S02
型號 製造商 描述 庫存 價格
NE3515S02-A
DISTI # NE3515S02-A-ND
California Eastern Laboratories (CEL)FET RF HFET 12GHZ 2V 10MA S02
RoHS: Compliant
Min Qty: 70
Container: Bulk
Limited Supply - Call
    NE3515S02-A
    DISTI # 551-NE3515S02-A
    California Eastern Laboratories (CEL)RF JFET Transistors X to Ku-BAND SUPER LOW NOISE AMP N-CH
    RoHS: Compliant
    0
      圖片 型號 描述
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      NE3517S03-T1C-A

      Mfr.#: NE3517S03-T1C-A

      OMO.#: OMO-NE3517S03-T1C-A-CEL

      Trans JFET N-CH 4V 70mA GaAs HJFET 4-Pin Case S-03 T/R
      可用性
      庫存:
      Available
      訂購:
      2500
      輸入數量:
      NE3515S02-A的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
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