S25FL256SAGNFV001

Mfr. #:: S25FL256SAGNFV001
製造商:: Cypress Semiconductor
描述:: Flash Memory 256-MBIT CMOS 3.0 VOLT FLASH MEMORY WITH 133-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS (WSON6X8 IN TUBE PACKING)
生命週期:: 製造商新產品
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更多信息:: S25FL256SAGNFV001 更多信息 S25FL256SAGNFV001 Product Details

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屬性值

Tags: S25FL256SAGNFV, S25FL256SAGN, S25FL256SAG, S25FL256SA, S25FL256S, S25FL25, S25FL2, S25FL, S25F, S25

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

S25FL256SAGNFV001 描述

***et: 256-MBIT CMOS 3.0 VOLT FLASH MEMORY WITH 133-MHZ SPI (SERIAL

***et Europe: NOR Flash Serial-SPI 3V 256M-bit 256M x 1bit 8ns 8-Pin WSON Tube

***ark: FLASH MEM SERIAL-SPI 3V/3.3V 256M-BIT 256M X 1 8NS 8-PIN WSON EP TUBE

***Components: In a Tube of 82, Cypress Semiconductor S25FL256SAGNFV001 NOR 256Mbit Flash Memory Chip, 8-Pin WSON

***ical: NOR Flash Serial (SPI, Dual SPI, Quad SPI) 3V/3.3V 256M-bit 256M/128M/64M x 1/2-bit/4-bit 8ns 8-Pin WSON EP Tube

***i-Key: IC FLASH 256M SPI 133MHZ 8WSON

S25FL256SAGNFV001 更多信息

S25FL MirroBit Flash Non-Volatile Memory: Cypress S25FL128S / S25FL256S MirroBit® Flash Non-Volatile Memory devices employ MirrorBit technology that stores two data bits in each memory array transistor. These Cypress devices feature 65nm process lithography as well as Eclipse architecture that dramatically improves program and erase performance. S25FL128S and S25FL256S Flash Non-Volatile Memory devices offer high densities coupled with the flexibility and fast performance required by a variety of embedded applications. They are ideal for code shadowing, XIP, and data storage.

S25FLxS FL-S NOR Flash Memory Devices: Cypress S25FLxS FL-S NOR Flash Memory Devices are 2.7V-3.6V or 1.65V-3.6V VIO Volt Flash Non-volatile Memory Devices. The S25FLxS FL-S NOR Flash Memory Devices use 65nm MirrorBit® technology. Featuring the Eclipse™ architecture with a Page Programming Buffer, 256-Mb S25FLxS FL-S NOR allows users to program up to 256-words. This results in faster effective programming and erase than prior generation SPI program or erase algorithms. The devices connect to a host system via an SPI and support traditional SPI single bit serial input and output.The S25FLxS FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO. The S25FLxS FL-S NOR transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands. The S25FLxS NOR instruction read transfer rate can match a traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FLxS FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. S25FLxS FL-S NOR memory devices are ideal for code shadowing, XIP, and data storage.

Market price

型號	製造商	描述	庫存	價格
S25FL256SAGNFV001 DISTI # V99:2348_06272599	Cypress Semiconductor	NOR Flash Serial-SPI 3V/3.3V 256M-bit 256M x 1 8ns 8-Pin WSON EP Tube RoHS: Compliant	54	820000:$2.8350 8200:$3.1970 82:$3.9850
S25FL256SAGNFV001 DISTI # S25FL256SAGNFV001-ND	Cypress Semiconductor	IC FLASH 256M SPI 133MHZ 8WSON RoHS: Compliant Min Qty: 164 Container: Tube	Temporarily Out of Stock	164:$3.9846
S25FL256SAGNFV001 DISTI # 31226168	Cypress Semiconductor	NOR Flash Serial-SPI 3V/3.3V 256M-bit 256M x 1 8ns 8-Pin WSON EP Tube RoHS: Compliant	54	2:$3.9850
S25FL256SAGNFV001 DISTI # 44X3091	Cypress Semiconductor	TUBE PKGED / 256-MBIT CMOS 3.0 VOLT FLASH MEMORY WITH 133-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS (WSON6X8 IN TUBE PACKING)	0	1:$3.8500 10:$3.5200 25:$3.4300 50:$3.3600 100:$3.2800 200:$3.2100 500:$3.1700 1000:$3.0700
S25FL256SAGNFV001 DISTI # 727-S25FL256SAGNFV00	Cypress Semiconductor	NOR Flash Nor RoHS: Compliant	62	1:$6.6000 10:$5.9000 25:$5.3100 100:$4.8400 250:$4.3700

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