RGT40NS65DGTL

Mfr. #:: RGT40NS65DGTL
製造商:: Rohm Semiconductor
描述:: IGBT Transistors 650V 20A IGBT Stop Trench
生命週期:: 製造商新產品
數據表:: RGT40NS65DGTL 數據表
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HTML Datasheet:: RGT40NS65DGTL Datasheet RGT40NS65DGTL Datasheet (P4)
ECAD Model:
更多信息:: RGT40NS65DGTL 更多信息

產品屬性
屬性值

製造商：: 羅姆半導體

產品分類：: IGBT晶體管

RoHS：: Y

技術：: 矽

包裝/案例：: TO-263-3

安裝方式：: 貼片/貼片

集電極-發射極電壓 VCEO 最大值：: 650 V

集電極-發射極飽和電壓：: 1.65 V

最大柵極發射極電壓：: 30 V

25 C 時的連續集電極電流：: 40 A

Pd - 功耗：: 161 W

最低工作溫度：: - 40 C

最高工作溫度：: + 175 C

系列：: RGT40NS65D

打包：: 捲軸

連續集電極電流 Ic 最大值：: 40 A

工作溫度範圍：: - 40 C to + 175 C

品牌：: 羅姆半導體

連續集電極電流：: 20 A

柵極-發射極漏電流：: +/- 200 nA

產品類別：: IGBT晶體管

出廠包裝數量：: 1000

子類別：: IGBT

第 # 部分別名：: RGT40NS65D(LPDS)

單位重量：: 0.068654 oz

Tags: RGT40N, RGT4, RGT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

RGT40NS65DGTL 描述

***ical: Trans IGBT Chip N-CH 650V 40A 161000mW 3-Pin(2+Tab) LPDS T/R

***ark: Igbt, Single, 650V, 40A, To-263S-3 Rohs Compliant: Yes

***nell: IGBT, SINGLE, 650V, 40A, TO-263S-3; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 161W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-263S; No. of

***i-Key: IGBT TRENCH FIELD 650V 40A LPDS

***ineon SCT: Copacked 600V IGBT in a D2-Pak package with a hyperfast 1-8 kHz diode, D2PAKCOPAK, RoHS

***ow.cn: Trans IGBT Chip N-CH 600V 31A 100000mW 3-Pin(2+Tab) D2PAK Tube

***ineon: Target Applications: Air Conditioner; Dryer; Pump; Solar; UPS; Washing Machine

***ment14 APAC: IGBT, D2-PAK; Transistor Type:IGBT; DC Collector Current:31A; Collector Emitter Voltage Vces:1.8V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:17A; Fall Time Max:230ns; Package / Case:D2-PAK; Power Dissipation Max:100W; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulsed Current Icm:120A; Rise Time:27ns; Termination Type:SMD; Transistor Polarity:N Channel; Voltage Vces:600V

***ical: Trans IGBT Chip N-CH 600V 32A 140000mW 3-Pin(2+Tab) D2PAK Tube

***ineon: Target Applications: Dryer; Fan; Lighting HID; Pump; Refridgeration; Solar; UPS; Washing Machine

***SIT Distribution GmbH: Insulated Gate Bipolar Transistor, 32A I(C), 600V V(BR)CES, N-Channel

*** Electronic Components: IGBT Transistors 600V TRENCH IGBT ULTRAFAST

***ment14 APAC: IGBT, SINGLE, 1.55V, 32A, TO-263AB

***ical: Trans IGBT Chip N-CH 600V 47A 3-Pin(2+Tab) D2PAK Tube

***SIT Distribution GmbH: Insulated Gate Bipolar Transistor, 47A I(C), 600V V(BR)CES, N-Channel, TO-263AB

*** Electronic Components: IGBT Transistors 600V TRENCH IGBT ULTRAFAST

***ark: Igbt, Single, 600V, 47A, To-263Ab-3

***i-Key Marketplace: IRGS4630 - DISCRETE IGBT WITH AN

***nell: IGBT, SINGLE, 600V, 47A, TO-263; DC Collector Current: 47A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 206W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-263AB; No. of Pi

***icroelectronics: Trench gate field-stop IGBT M series, 650 V 15 A low loss

***ow.cn: Trans IGBT Chip N-CH 650V 30A 136000mW 3-Pin(2+Tab) D2PAK T/R

***icroelectronics SCT: Short-circuit rugged IGBT, D2PAK, Tape and Reel

***r Electronics: Insulated Gate Bipolar Transistor, 30A I(C), 650V V(BR)CES, N-Channel, TO-263AB

***i-Key: TRENCH GATE FIELD-STOP IGBT M SE

***-Wing Technology: Tube Surface Mount N-CHANNEL SINGLE IGBT Transistor 2.5V @ 15V 12A 45A 167W 6ns/40ns

***et: TO-263AB, SINGLE, 600V SIZE 3 N-CH SMPS II IGBT

***i-Key: IGBT N-CH SMPS 600V 45A TO263AB

***ical: Trans IGBT Chip N-CH 600V 40A 208000mW Automotive 3-Pin(2+Tab) D2PAK T/R

***r Electronics: Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB

***or: IGBT FIELD STOP 600V 40A D2PAK

***ure Electronics: IGBT Transistors 600V 20A FSP IGBT

***ment14 APAC: IGBT, 600V, 40A, 150DEG C, 208W;

***rchild Semiconductor: Using novel field-stop IGBT technology, Fairchild’s new series of field-stop IGBTs offer optimum performance for automotive chargers, inverters, and other applications where low conduction and switching losses are essential.

RGT40NS65DGTL 更多信息

Field Stop Trench IGBTs: ROHM Field Stop Trench IGBTs are energy saving high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit withstand time, and built-in very fast & soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioner, welder, and general inverters for industrial use.

Market price

型號	製造商	描述	庫存	價格
RGT40NS65DGTL DISTI # RGT40NS65DGTLCT-ND	ROHM Semiconductor	IGBT 650V 40A 161W TO-263S RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1487In Stock	500:$1.4062 250:$1.6071 100:$1.8080 25:$2.0088 10:$2.2500 1:$2.4900
RGT40NS65DGTL DISTI # RGT40NS65DGTLDKR-ND	ROHM Semiconductor	IGBT 650V 40A 161W TO-263S RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1487In Stock	500:$1.4062 250:$1.6071 100:$1.8080 25:$2.0088 10:$2.2500 1:$2.4900
RGT40NS65DGTL DISTI # RGT40NS65DGTLTR-ND	ROHM Semiconductor	IGBT 650V 40A 161W TO-263S RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	1000In Stock	2000:$1.0532 1000:$1.1312
RGT40NS65DGTL DISTI # RGT40NS65DGTL	ROHM Semiconductor	Trans IGBT Chip N-CH 650V 40A 3-Pin TO-263S T/R - Tape and Reel (Alt: RGT40NS65DGTL) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$1.1749 2000:$1.1019 4000:$1.0369 6000:$0.9799 10000:$0.9529
RGT40NS65DGTL DISTI # 755-RGT40NS65DGTL	ROHM Semiconductor	IGBT Transistors 650V 20A IGBT Stop Trench RoHS: Compliant	1430	1:$2.1900 10:$1.8600 100:$1.4900 500:$1.3100 1000:$1.0800 2000:$1.0100 5000:$0.9660
RGT40NS65DGTL DISTI # IGBT2241	ROHM Semiconductor	IGBT650V20A1,65VTO-262 RoHS: Compliant	Stock DE - 0Stock HK - 0Stock US - 0	1000:$1.5700 2000:$1.4700 3000:$1.4200 4000:$1.3100
RGT40NS65DGTL	ROHM Semiconductor	IGBT Transistors 650V 20A IGBT Stop Trench RoHS: Compliant	Americas -
RGT40NS65DGTL DISTI # 2519780	ROHM Semiconductor	IGBT, SINGLE, 650V, 40A, TO-263S-3 RoHS: Compliant	0	500:£0.9880 250:£1.0600 100:£1.1300 10:£1.4200 1:£1.8800

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