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| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| IPD25CN10NGATMA1 DISTI # V72:2272_06384144 | Infineon Technologies AG | Trans MOSFET N-CH 100V 35A Automotive 3-Pin(2+Tab) DPAK T/R RoHS: Compliant | 0 | |
| IPD25CN10NGATMA1 DISTI # V36:1790_06384144 | Infineon Technologies AG | Trans MOSFET N-CH 100V 35A Automotive 3-Pin(2+Tab) DPAK T/R RoHS: Compliant | 0 | |
| IPD25CN10NGATMA1 DISTI # IPD25CN10NGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 100V 35A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 4338In Stock |
|
| IPD25CN10NGATMA1 DISTI # IPD25CN10NGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 100V 35A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 4338In Stock |
|
| IPD25CN10NGATMA1 DISTI # IPD25CN10NGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 100V 35A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | 2500In Stock |
|
| IPD25CN10NGBUMA1 DISTI # IPD25CN10NGBUMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 100V 35A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Limited Supply - Call | |
| IPD25CN10NGBUMA1 DISTI # IPD25CN10NGBUMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 100V 35A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| IPD25CN10NGBUMA1 DISTI # IPD25CN10NGBUMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 100V 35A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| IPD25CN10NGATMA1 DISTI # IPD25CN10NGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 100V 35A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD25CN10NGATMA1) RoHS: Compliant Min Qty: 2500 Container: Reel | Americas - 0 |
|
| IPD25CN10NGATMA1 DISTI # SP001127810 | Infineon Technologies AG | Trans MOSFET N-CH 100V 35A 3-Pin TO-252 T/R (Alt: SP001127810) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel | Europe - 0 |
|
| IPD25CN10NGATMA1 DISTI # 47W3470 | Infineon Technologies AG | MOSFET, N CHANNEL, 100V, 35A, TO252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.019ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes | 2315 |
|
| IPD25CN10NGATMA1 DISTI # 726-IPD25CN10NGATMA1 | Infineon Technologies AG | MOSFET MV POWER MOS RoHS: Compliant | 0 |
|
| IPD25CN10NGATMA1 DISTI # 1702266 | Infineon Technologies AG | MOSFET N-CH 100V 35A OPTIMOS2 DPAK, RL of 2500 | 2 |
|
| IPD25CN10NGATMA1 DISTI # 2212856 | Infineon Technologies AG | MOSFET, N-CH, 100V, 35A, TO252-3 | 2315 |
|
| IPD25CN10NG | Infineon Technologies AG | 100V,35A,N Channel Power MOSFET | 91 |
|
| 圖片 | 型號 | 描述 |
|---|---|---|
|
Mfr.#: IPD22N08S2L-50 OMO.#: OMO-IPD22N08S2L-50 |
MOSFET N-Ch 75V 22A DPAK-2 OptiMOS |
|
|
Mfr.#: IPD220N06L3GBTMA1 OMO.#: OMO-IPD220N06L3GBTMA1 |
MOSFET MV POWER MOS |
|
Mfr.#: IPD220N06L3GBTMA1 |
MOSFET N-CH 60V 30A TO252-3 |
|
|
Mfr.#: IPD25CNE8N G |
MOSFET N-CH 85V 35A TO252-3 |
|
Mfr.#: IPD200N15N3G OMO.#: OMO-IPD200N15N3G-1190 |
POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 150V, 0.02OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252 |
|
|
Mfr.#: IPD200N15N3GBTMA1 |
MOSFET N-CH 150V 50A TO252-3 |
|
|
Mfr.#: IPD250N06N3GS OMO.#: OMO-IPD250N06N3GS-1190 |
全新原裝 |
|
|
Mfr.#: IPD25CN10NG OMO.#: OMO-IPD25CN10NG-1190 |
100V,35A,N Channel Power MOSFET |
|
|
Mfr.#: IPD25N06L OMO.#: OMO-IPD25N06L-1190 |
全新原裝 |
|
|
Mfr.#: IPD25N06S-04 OMO.#: OMO-IPD25N06S-04-1190 |
全新原裝 |