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FQPF6N80CT

FQPF6N80CT
Mfr. #:
FQPF6N80CT
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET 800V N-Ch Adv Q-FET C-Series
生命週期:
製造商新產品
數據表:
FQPF6N80CT 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-220-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
800 V
Id - 連續漏極電流：
5.5 A
Rds On - 漏源電阻：
2.5 Ohms
Vgs - 柵源電壓：
30 V
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
51 W
配置：
單身的
頻道模式：
增強
打包：
管子
高度：
16.3 mm
長度：
10.67 mm
系列：
FQPF6N80C
晶體管類型：
1 N-Channel
寬度：
4.7 mm
品牌：
安森美半導體/飛兆半導體
正向跨導 - 最小值：
5.4 S
秋季時間：
44 ns
產品類別：
MOSFET
上升時間：
65 ns
出廠包裝數量：
1000
子類別：
MOSFET
典型關斷延遲時間：
47 ns
典型的開啟延遲時間：
26 ns
單位重量：
0.080072 oz
Tags
FQPF6N80C, FQPF6N80, FQPF6N8, FQPF6N, FQPF6, FQPF, FQP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
Power MOSFET, N-Channel, QFET®, 800 V, 5.5 A, 2.5 Ω, TO-220F
***Yang
Trans MOSFET N-CH 800V 5.5A 3-Pin(3+Tab) TO-220FP Tube
***r Electronics
Power Field-Effect Transistor, 5.5A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N, TO-220F; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:800V; Current, Id Cont:5.5A; Resistance, Rds On:2.5ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220F; Termination Type:Through Hole; Current, Idm Pulse:22A; No. of Pins:3; Power Dissipation:51W; Voltage, Vds Max:800V; Voltage, Vgs th Max:5V
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
Power MOSFET, N-Channel, QFET®, 800 V, 7 A, 1.9 Ω, TO-220F
***ow.cn
Trans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) TO-220FP Tube
***nell
MOSFET, N-CH, 800V, 6.6A, TO-220F-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.6A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 1.57ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V;
***r Electronics
Power Field-Effect Transistor, 6.6A I(D), 800V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***va Crawler
N-channel 800 V, 1.5 Ohm typ., 5.2 A SuperMESH Power MOSFET in a TO-220FP package
***ical
Trans MOSFET N-CH 800V 5.2A 3-Pin(3+Tab) TO-220FP Tube
***el Electronic
MSP430F563x Mixed Signal Microcontroller 113-BGA MICROSTAR JUNIOR -40 to 85
***ponent Stockers USA
5.2 A 800 V 1.8 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***nell
MOSFET, N, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.2A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 1.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipat
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 5.2A I(D), 800V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***emi
Power MOSFET, N-Channel, QFET®, 900 V, 6 A, 2.3 Ω, TO-220F
***ure Electronics
N-Channel 900 V 2.3 Ohm Through Hole Mosfet - TO-220F
***ical
Trans MOSFET N-CH 900V 6A 3-Pin(3+Tab) TO-220FP Rail
***enic
900V 6A 56W 2.3´Î@10V3A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
***ment14 APAC
MOSFET, N CH, 900V, 6A, TO-220F-3; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Source Voltage Vds:900V; On Resistance
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: TO-220 Polarity: N Variants: Enhancement mode Power dissipation: 56 W
*** Stop Electro
Power Field-Effect Transistor, 6A I(D), 900V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***nell
MOSFET, N, 900V; Transistor Polarity: N Channel; Continuous Drain Current Id: 6A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 2.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 56W; Transistor Case Style: TO-220F; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C; Termination Type: Through Hole; Transistor Type: Enhancement; Voltage Vds Typ: 900V; Voltage Vgs Rds on Measurement: 10V
***icroelectronics
N-channel 900 V, 1.56 Ohm, 5.8 A TO-220FP Zener-protected SuperMESH(TM) Power MOSFET
***ure Electronics
Single N-Channel 900 V 2 Ohm 60.5 nC 30 W Silicon Flange Mount Mosfet - TO-220FP
***ical
Trans MOSFET N-CH 900V 5.8A 3-Pin(3+Tab) TO-220FP Tube
***nell
MOSFET, N, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.8A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 1.56ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipa
***r Electronics
Power Field-Effect Transistor, 5.8A I(D), 900V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***emi
Power MOSFET, N-Channel, QFET®, 900 V, 6.3 A, 1.9 Ω, TO-220F
***Yang
Trans MOSFET N-CH 900V 6.3A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 6.3A I(D), 900V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***icroelectronics
N-channel 800 V, 1.9 Ohm, 4.3 A, Zener-protected SuperMESH(TM) Power MOSFET in TO-220FP package
*** Source Electronics
Trans MOSFET N-CH 800V 4.3A 3-Pin(3+Tab) TO-220FP Tube / MOSFET N-CH 800V 4.3A TO-220FP
***ark
N CHANNEL MOSFET, 800V, 4.3A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:4.3A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V RoHS Compliant: Yes
型號 製造商 描述 庫存 價格
FQPF6N80CT
DISTI # FQPF6N80CT-ND		ON SemiconductorMOSFET N-CH 800V 5.5A TO-220F
RoHS: Compliant
Min Qty: 1
Container: Tube		757In Stock
  • 500:$1.3296
  • 100:$1.7095
  • 10:$2.1270
  • 1:$2.3600
FQPF6N80CT
DISTI # FQPF6N80CT		ON SemiconductorTrans MOSFET N-CH 800V 5.5A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube (Alt: FQPF6N80CT)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$0.8239
  • 2000:$0.8189
  • 4000:$0.8079
  • 6000:$0.7979
  • 10000:$0.7779
FQPF6N80CT
DISTI # FQPF6N80CT		ON SemiconductorTrans MOSFET N-CH 800V 5.5A 3-Pin(3+Tab) TO-220F Rail (Alt: FQPF6N80CT)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€1.3049
  • 10:€1.0679
  • 25:€0.9129
  • 50:€0.8289
  • 100:€0.8159
  • 500:€0.8029
  • 1000:€0.7909
FQPF6N80CTFairchild Semiconductor CorporationPower Field-Effect Transistor, 5.5A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		70
  • 1000:$1.1800
  • 500:$1.2400
  • 100:$1.2900
  • 25:$1.3500
  • 1:$1.4500
FQPF6N80CT
DISTI # 512-FQPF6N80CT		ON SemiconductorMOSFET 800V N-Ch Adv Q-FET C-Series
RoHS: Compliant		734
  • 1:$2.0400
  • 10:$1.7300
  • 100:$1.3900
  • 500:$1.2100
  • 1000:$1.0100
  • 2000:$0.9330
  • 5000:$0.8980
圖片 型號 描述
FQP6N80C

Mfr.#: FQP6N80C

OMO.#: OMO-FQP6N80C

 MOSFET 800V N-Ch Q-FET advance C-Series
RC2512FK-0718R2L

Mfr.#: RC2512FK-0718R2L

OMO.#: OMO-RC2512FK-0718R2L-YAGEO

 Res Thick Film 2512 18.2 Ohm 1% 1W ±100ppm/C Molded SMD Embossed T/R
FQP6N80C

Mfr.#: FQP6N80C

OMO.#: OMO-FQP6N80C-ON-SEMICONDUCTOR

 MOSFET N-CH 800V 5.5A TO-220
可用性
庫存:
732
訂購:
2715
輸入數量:
FQPF6N80CT的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$2.00
US$2.00
10
US$1.69
US$16.90
100
US$1.36
US$136.00
500
US$1.18
US$590.00
1000
US$0.99
US$990.00
2000
US$0.92
US$1 834.00
5000
US$0.88
US$4 415.00
10000
US$0.85
US$8 500.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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