NXH80B120H2Q0SG

NXH80B120H2Q0SG
Mfr. #:
NXH80B120H2Q0SG
製造商:
ON Semiconductor
描述:
IGBT Modules PIM 1200V 40A DU BST SiC DIODE
生命週期:
製造商新產品
數據表:
NXH80B120H2Q0SG 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
NXH80B120H2Q0SG 更多信息
產品屬性
屬性值
製造商:
安森美半導體
產品分類:
IGBT 模塊
RoHS:
Y
技術:
碳化矽
產品:
IGBT 碳化矽模塊
配置:
雙重的
集電極-發射極電壓 VCEO 最大值:
1200 V
集電極-發射極飽和電壓:
2.2 V
25 C 時的連續集電極電流:
40 A
柵極-發射極漏電流:
200 nA
Pd - 功耗:
103 W
包裝/案例:
Q0BOOST
最低工作溫度:
- 40 C
最高工作溫度:
+ 125 C
打包:
托盤
品牌:
安森美半導體
安裝方式:
壓合
最大柵極發射極電壓:
20 V
產品類別:
IGBT 模塊
出廠包裝數量:
24
子類別:
IGBT
Tags
NXH8, NXH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
Power Integrated Module, Dual Boost, 1200 V, 40 A IGBT + 1200 V, 15 A SiC Diode Bare copper DBC
***ical
Trans IGBT Module N-CH 1200V 41A 103000mW 20-Pin Case 180AJ Tray
***et Europe
Transistor IGBT Module N-CH 1.2kV 40A ±20V Screw Tray
***ark
Igbt, Module, N-Ch, 1.2Kv, 40A; Transistor Polarity:n Channel; Dc Collector Current:40A; Collector Emitter Saturation Voltage Vce(On):2.2V; Power Dissipation Pd:103W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes
NXH80B120H2Q0SG Power Integrated Module
ON Semiconductor NXH80B120H2Q0SG Power Integrated Module (PIM) with a dual boost stage consists of two 40A/1200V IGBTs. This module includes two 15A/1200V silicon carbide diodes, two 25A/1600V anti-parallel diodes for the IGBTs, two 25A/1600V bypass rectifiers, and an on-board thermistor. Typical applications include solar inverter and Uninterruptible Power Supplies (UPS).
Wide Bandgap SiC Devices
ON Semiconductor Wide Bandgap Silicon Carbide (SiC) Devices incorporate a completely new technology that provides superior switching performance and higher reliability compared to silicon. The system benefits include the highest efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost. ON Semiconductor’s SiC portfolio includes 650V and 1200V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.
SiC Diodes and IGBT Power Integrated Modules
ON Semiconductor Silicon Carbide (SiC) Diodes and IGBT Power Integrated Modules (PIM) provide lower conduction and switching losses. These integrated high-speed field stop IGBT and SiC diodes feature built-in Negative Temperature Co-efficient (NTC) for temperature monitoring. The SiC diodes and IGBT PIMs are optimized for solar inverters, UPS, or power stages that need a more compact design.
Solutions for Energy Infrastructure
ON Semiconductor Solutions for Energy Infrastructure address the landscape for energy generation, distribution, and storage that is rapidly evolving to fulfill targets set by government policy and increasing consumption. Heightened efficiency targets, reductions of CO2 emissions, and a focus on renewable and clean energy are key factors in this Energy Infrastructure Evolution. ON Semiconductor offers a comprehensive portfolio of energy efficient solutions to serve the demanding needs of high-power applications including Silicon Carbide (SiC) Diodes, Intelligent Power Modules, and Current Sense Amplifiers.
型號 製造商 描述 庫存 價格
NXH80B120H2Q0SG
DISTI # V99:2348_18980267
ON SemiconductorPIM 1200V, 40A DUAL BOOST24
  • 25:$71.0800
  • 10:$73.9100
  • 5:$75.8500
  • 1:$77.2600
NXH80B120H2Q0SG
DISTI # NXH80B120H2Q0SGOS-ND
ON SemiconductorPIM 1200V, 40A DUAL BOOST
RoHS: Compliant
Min Qty: 1
Container: Tray
24In Stock
  • 24:$75.0200
  • 1:$79.8600
NXH80B120H2Q0SG
DISTI # 26992226
ON SemiconductorPIM 1200V, 40A DUAL BOOST24
  • 1:$77.2600
NXH80B120H2Q0SG
DISTI # NXH80B120H2Q0SG
ON SemiconductorDual Boost Power Module with SiC Rectifier 1200 V 40 A IGBT Tray - Trays (Alt: NXH80B120H2Q0SG)
RoHS: Compliant
Min Qty: 6000
Container: Tray
Americas - 0
    NXH80B120H2Q0SG
    DISTI # 48AC1760
    ON SemiconductorIGBT, MODULE, N-CH, 1.2KV, 40A,Transistor Polarity:N Channel,DC Collector Current:40A,Collector Emitter Saturation Voltage Vce(on):2.2V,Power Dissipation Pd:103W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case RoHS Compliant: Yes22
    • 25:$73.3300
    • 10:$74.8000
    • 5:$76.7800
    • 1:$78.2100
    NXH80B120H2Q0SG
    DISTI # 863-NXH80B120H2Q0SG
    ON SemiconductorIGBT Modules PIM 1200V 40A DU BST SiC DIODE
    RoHS: Compliant
    23
    • 1:$77.4400
    • 5:$76.0200
    • 10:$74.0600
    • 25:$72.6000
    NXH80B120H2Q0SG
    DISTI # 1723298
    ON SemiconductorINTELLIGENT POWER MODULE 40A 1200V, PU24
    • 24:£51.6730
    NXH80B120H2Q0SG
    DISTI # 2835630
    ON SemiconductorIGBT, MODULE, N-CH, 1.2KV, 40A
    RoHS: Compliant
    22
    • 24:$113.0600
    • 1:$120.3500
    NXH80B120H2Q0SG
    DISTI # 2835630
    ON SemiconductorIGBT, MODULE, N-CH, 1.2KV, 40A22
    • 50:£54.2800
    • 10:£55.3900
    • 5:£58.0000
    • 1:£59.0900
    圖片 型號 描述
    NXH80B120H2Q0SG

    Mfr.#: NXH80B120H2Q0SG

    OMO.#: OMO-NXH80B120H2Q0SG

    IGBT Modules PIM 1200V 40A DU BST SiC DIODE
    NXH80B120H2Q0SG

    Mfr.#: NXH80B120H2Q0SG

    OMO.#: OMO-NXH80B120H2Q0SG-ON-SEMICONDUCTOR

    PIM 1200V, 40A DUAL BOOST
    可用性
    庫存:
    23
    訂購:
    2006
    輸入數量:
    NXH80B120H2Q0SG的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格(美元)
    數量
    單價
    小計金額
    1
    US$77.44
    US$77.44
    5
    US$76.02
    US$380.10
    10
    US$74.06
    US$740.60
    25
    US$72.60
    US$1 815.00
    由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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