IRGR3B60KD2PBF

Mfr. #:: IRGR3B60KD2PBF
製造商:: Infineon Technologies
描述:: IGBT Transistors 600V Non Punch Thru Short Cir Ratd IGBT
生命週期:: 製造商新產品
數據表:: IRGR3B60KD2PBF 數據表
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ECAD Model:

產品屬性
屬性值

製造商: 英飛凌科技

產品分類: IGBT - 單

系列: -

打包: 管替代包裝

單位重量: 0.012346 oz

安裝方式: 貼片/貼片

包裝盒: TO-252-3, DPak (2 Leads + Tab), SC-63

輸入類型: 標準

安裝型: 表面貼裝

供應商-設備-包: D-Pak

配置: 單身的

最大功率: 52W

反向恢復時間trr: 77ns

電流收集器 Ic-Max: 7.8A

電壓收集器發射極擊穿最大值: 600V

IGBT型: 不擴散條約

電流收集器脈衝Icm: 15.6A

Vce-on-Max-Vge-Ic: 2.4V @ 15V, 3A

開關能源: 62μJ (on), 39μJ (off)

柵極電荷: 13nC

Td-on-off-25°C: 18ns/110ns

測試條件: 400V, 3A, 100 Ohm, 15V

鈀功耗: 52 W

最低工作溫度: - 55 C

集電極-發射極-電壓-VCEO-Max: 600 V

集電極-發射極-飽和-電壓: 2.4 V

25-C 時的連續集電極電流: 7.8 A

最大柵極發射極電壓: +/- 20 V

Tags: IRGR3B60KD2, IRGR3B60K, IRGR3, IRGR, IRG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRGR3B60KD2PBF 描述

***ernational Rectifier: 600V Non Punch Through, Short Circuit Rated IGBT in a D-Pak package.

***ure Electronics: N-Channel 600 V 4.2 A IGBT with Ultrafast Soft Recovery Diode - DPAK

***ied Electronics & Automation: 600V NON PUNCH THROUGH, SHORT CIRCUIT RATED IGBT IN A D-PAK PACKAGE.

***ineon: Target Applications: Dishwasher; Fan; Lighting HID; Refridgeration

***ical: Trans IGBT Chip N-CH 600V 7.8A 3-Pin(2+Tab) DPAK

***i-Key: IGBT UFAST 600V 7.8A DPAK

***ukat: 600V 7,8A 52W TO252AA

***ark: IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:7.8A; Collector Emitter Saturation Voltage, Vce(sat):2.4V; Power Dissipation, Pd:52W; Package/Case:D-PAK; C-E Breakdown Voltage:600V ;RoHS Compliant: Yes

***nell: IGBT, 600V, 7.8A, D-PAK; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current, Ic Continuous a Max:7.8A; Voltage, Vce Sat Max:2.4V; Power Dissipation:52W; Case Style:D-PAK; Termination Type:SMD; Current, Icm Pulsed:15.6A; Power, Pd:52W; Time, Fall:80ns; Time, Fall Max:80ns; Time, Rise:15ns; Voltage, Vceo:600V

Market price

型號	製造商	描述	庫存	價格
IRGR3B60KD2PBF DISTI # IRGR3B60KD2PBF-ND	Infineon Technologies AG	IGBT 600V 7.8A 52W DPAK RoHS: Compliant Min Qty: 3000 Container: Tube	Limited Supply - Call
IRGR3B60KD2PBF DISTI # 70018501	Infineon Technologies AG	600V Non Punch Through,Short Circut Rated IGBT IN A D-PAK Package. RoHS: Compliant	0	675:$2.7100 1350:$2.6560 3375:$2.5750 6750:$2.4660 16875:$2.3040
IRGR3B60KD2PBF DISTI # 942-IRGR3B60KD2PBF	Infineon Technologies AG	IGBT Transistors 600V Non Punch Thru Short Cir Ratd IGBT RoHS: Compliant	3061	1:$1.5400 10:$1.3100 100:$1.0500 500:$0.9150 1000:$0.7590

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