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2SK4018(Q)

2SK4018(Q)
Mfr. #:
2SK4018(Q)
製造商:
Toshiba America Electronic Components
描述:
生命週期:
製造商新產品
數據表:
2SK4018(Q) 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
產品屬性
屬性值
Tags
2SK401, 2SK40, 2SK4, 2SK
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET N-CH Si 100V 3A 3-Pin(3+Tab) PW-Mold2
***ical
Trans MOSFET N-CH 650V 5.2A 3-Pin(3+Tab) IPAK SL Tube
***ark
Mosfet, N-Ch, 650V, 5.2A, To-251-3; Transistor Polarity:n Channel; Continuous Drain Current Id:5.2A; Drain Source Voltage Vds:650V; On Resistance Rds(On):1.26Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
CoolMOS CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets. | Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
***i-Key
MOSFET N-CH 200V 3.3A TO-220
***ser
MOSFETs 200V N-Channel a-FET Logic Level
***ark
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:3.3A; On-Resistance, Rds(on):1.5ohm; Rds(on) Test Voltage, Vgs:5V; Package/Case:TO-220; Leaded Process Compatible:Yes RoHS Compliant: Yes
*** Electronics
Trans MOSFET N-CH 200V 3.3A 3-Pin(3+Tab) I2PAK Rail
***ser
MOSFETs 200V N-Channel a-FET Logic Level
***el Electronic
IC REG LINEAR 3.1V 150MA HVSOF5
***ical
Trans MOSFET N-CH 550V 2.4A 3-Pin(2+Tab) DPAK Tube
*** Electronics
COOLMOS N-CHANNEL POWER MOSFET
***(Formerly Allied Electronics)
IRF720PBF N-channel MOSFET Transistor; 3.3 A; 400 V; 3-Pin TO-220AB
***ure Electronics
Single N-Channel 400 V 1.8 Ohms Flange Mount Power Mosfet - TO-220-3
***ical
Trans MOSFET N-CH 400V 3.3A 3-Pin(3+Tab) TO-220AB
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
N Channel Mosfet, 400V, 3.3A To-220; Channel Type:n Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:3.3A; Transistor Mounting:through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: No
***ure Electronics
Single N-Channel 200 V 1.5 Ohms Flange Mount Power Mosfet - TO-220AB
***ical
Trans MOSFET N-CH 200V 3.3A 3-Pin (3+Tab) TO-220AB
***enic
200V 3.3A 1.5´Î@10V2A 36W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
*** Stop Electro
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, 200V, 3.3A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:3.3A; Drain Source Voltage Vds:200V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:36W; Transistor Case Style:TO-220AB; No. of Pins:3; Current Id Max:3.3A; Junction to Case Thermal Resistance A:3.5°C/W; Package / Case:TO-220AB; Power Dissipation Pd:36W; Power Dissipation Pd:36W; Pulse Current Idm:10A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
型號 製造商 描述 庫存 價格
2SK4018(Q)
DISTI # 30601722		Toshiba America Electronic ComponentsTrans MOSFET N-CH 100V 3A 3-Pin(3+Tab) PW-Mold2
RoHS: Compliant		1159
  • 800:$0.3034
  • 100:$0.3404
  • 61:$0.3455
2SK4018(Q)
DISTI # C1S751200310953		Toshiba America Electronic ComponentsTrans MOSFET N-CH Si 100V 3A 3-Pin(3+Tab) PW-Mold2
RoHS: Compliant		1159
  • 800:$0.2630
  • 100:$0.2940
  • 50:$0.3000
  • 10:$0.3560
圖片 型號 描述
2SK4005-MR

Mfr.#: 2SK4005-MR

OMO.#: OMO-2SK4005-MR-1190

 全新原裝
2SK4016

Mfr.#: 2SK4016

OMO.#: OMO-2SK4016-1190

 全新原裝
2SK4022

Mfr.#: 2SK4022

OMO.#: OMO-2SK4022-1190

 全新原裝
2SK4028

Mfr.#: 2SK4028

OMO.#: OMO-2SK4028-1190

 全新原裝
2SK4042

Mfr.#: 2SK4042

OMO.#: OMO-2SK4042-1190

 全新原裝
2SK4073LS

Mfr.#: 2SK4073LS

OMO.#: OMO-2SK4073LS-1190

 全新原裝
2SK4079B

Mfr.#: 2SK4079B

OMO.#: OMO-2SK4079B-1190

 全新原裝
2SK4089LS TK12A65D

Mfr.#: 2SK4089LS TK12A65D

OMO.#: OMO-2SK4089LS-TK12A65D-1190

 全新原裝
2SK4096LS,2SK4096,K4096L

Mfr.#: 2SK4096LS,2SK4096,K4096L

OMO.#: OMO-2SK4096LS-2SK4096-K4096L-1190

 全新原裝
2SK4037(TE12LQ)CT-ND

Mfr.#: 2SK4037(TE12LQ)CT-ND

OMO.#: OMO-2SK4037-TE12LQ-CT-ND-1190

 全新原裝
可用性
庫存:
Available
訂購:
5500
輸入數量:
2SK4018(Q)的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$0.39
US$0.39
10
US$0.37
US$3.75
100
US$0.36
US$35.51
500
US$0.34
US$167.65
1000
US$0.32
US$315.60
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