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IRF2204SPBF

IRF2204SPBF
Mfr. #:
IRF2204SPBF
製造商:
Infineon Technologies
描述:
MOSFET MOSFT 40V 170A 3.6mOhm 130nC
生命週期:
製造商新產品
數據表:
IRF2204SPBF 數據表
交貨:
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支付:
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HTML Datasheet:
IRF2204SPBF DatasheetIRF2204SPBF Datasheet (P4-P6)IRF2204SPBF Datasheet (P7-P9)IRF2204SPBF Datasheet (P10-P11)
ECAD Model:
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
TO-252-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
40 V
Id - 連續漏極電流：
170 A
Rds On - 漏源電阻：
3.6 mOhms
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
130 nC
Pd - 功耗：
200 W
配置：
單身的
打包：
管子
高度：
2.3 mm
長度：
6.5 mm
晶體管類型：
1 N-Channel
寬度：
6.22 mm
品牌：
英飛凌科技
產品類別：
MOSFET
出廠包裝數量：
1000
子類別：
MOSFET
第 # 部分別名：
SP001563220
單位重量：
0.139332 oz
Tags
IRF2204S, IRF2204, IRF220, IRF22, IRF2, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ure Electronics
Single N-Channel 40 V 3.6 mOhm 200 nC Surface Mount HEXFET® Power Mosfet - D2PAK
***Yang
Trans MOSFET N-CH 40V 170A 3-Pin(2+Tab) D2PAK T/R - Rail/Tube
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
MOSFET, N, 40V, 170A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:170A; Drain Source Voltage Vds:40V; On Resistance Rds(on):3.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:200W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:170A; Junction to Case Thermal Resistance A:0.75°C/W; On State resistance @ Vgs = 10V:3.6mohm; Package / Case:D2-PAK; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:850A; Termination Type:SMD; Voltage Vds:40V; Voltage Vds Typ:40V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3.6V
***ure Electronics
Single N-Channel 40 V 3.7 mOhm 150 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
***(Formerly Allied Electronics)
Power MOSFET,N-Ch,VDSS 40V,RDS(ON) 2.7 Milliohms,ID 200A,D2Pak,PD 230W,VGS+/-16V
***ical
Trans MOSFET N-CH Si 40V 180A 3-Pin(2+Tab) D2PAK Tube
***nell
MOSFET, N, 40V, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 75A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0037ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipa
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 180A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 0.0035Ohm;ID 162A;D2Pak;PD 200W;VGS +/-20V
***ure Electronics
Single N-Channel 40 V 0.004 Ohm 160 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***nell
MOSFET, N, 40V, 162A, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 162A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.004ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power D
***icroelectronics
N-CHANNEL 30V - 0.0032 OHM - 120A D2PAK STripFET II POWER MOSFET
***Yang
Trans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***ment14 APAC
MOSFET, N CH, 30V, 120A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.2mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:120A; Package / Case:D2-PAK; Power Dissipation Pd:300W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ical
Trans MOSFET N-CH 40V 219A 7-Pin(6+Tab) D2PAK T/R
***emi
N-Channel PowerTrench® MOSFET 40V, 219A, 2.4mΩ
***el Electronic
Chip Resistor - Surface Mount 165kOhm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 165K OHM 1% 1/10W 0402
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***nell
MOSFET, N CH, 40V, 100A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:214W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:7; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***ure Electronics
N-Channel 40 V 3.7 mOhm Surface Mount STripFET II Mosfet - D2PAK
***ical
Trans MOSFET N-CH 40V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
***nell
MOSFET, N-CH, 40V, 120A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 310W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)
型號 製造商 描述 庫存 價格
IRF2204SPBF
DISTI # 31043777		Infineon Technologies AGTrans MOSFET N-CH Si 40V 170A 3-Pin(2+Tab) D2PAK Tube
RoHS: Compliant		1000
  • 1000:$1.0771
  • 500:$1.1097
  • 250:$1.1444
  • 100:$1.1813
  • 10:$1.2207
IRF2204SPBF
DISTI # IRF2204SPBF-ND		Infineon Technologies AGMOSFET N-CH 40V 170A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Tube		2000In Stock
  • 1000:$1.9385
  • 500:$2.2986
  • 100:$2.8386
  • 10:$3.4620
  • 1:$3.8800
IRF2204SPBF
DISTI # C1S322000479476		Infineon Technologies AGTrans MOSFET N-CH Si 40V 170A 3-Pin(2+Tab) D2PAK Tube
RoHS: Compliant		1000
  • 1000:$1.3200
  • 500:$1.7200
  • 100:$1.8700
  • 25:$2.2800
  • 5:$2.8100
IRF2204SPBF
DISTI # IRF2204SPBF		Infineon Technologies AGTrans MOSFET N-CH 40V 170A 3-Pin(2+Tab) D2PAK T/R - Rail/Tube (Alt: IRF2204SPBF)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$1.3900
  • 2000:$1.2900
  • 4000:$1.2900
  • 6000:$1.2900
  • 10000:$1.1900
IRF2204SPBF
DISTI # IRF2204SPBF		Infineon Technologies AGTrans MOSFET N-CH 40V 170A 3-Pin(2+Tab) D2PAK T/R (Alt: IRF2204SPBF)
RoHS: Compliant
Min Qty: 250
Container: Tape and Reel		Asia - 0
    IRF2204SPBF
    DISTI # 38K2759    		Infineon Technologies AGMOSFET Transistor, N Channel, 170 A, 40 V, 3.6 mohm, 10 V, 4 V RoHS Compliant: Yes0
      IRF2204SPBF
      DISTI # 70018175      		Infineon Technologies AGIRF2204SPBF N-channel MOSFET Transistor,170 A,40 V,3-Pin D2PAK
      RoHS: Compliant      		0
      • 250:$4.2800
      IRF2204SPBF
      DISTI # 942-IRF2204SPBF      		Infineon Technologies AGMOSFET MOSFT 40V 170A 3.6mOhm 130nC
      RoHS: Compliant      		0
        IRF2204SPBF
        DISTI # 8312780P        		Infineon Technologies AGHEXFET N-CH MOSFET 170A 40V D2PAK, TU335
        • 25:£2.2820
        • 100:£1.9980
        • 250:£1.8680
        • 500:£1.7640
        IRF2204SPBF
        DISTI # IRF2204SPBF        		Infineon Technologies AGTransistor: N-MOSFET,unipolar,40V,170A,200W,D2PAK59
        • 1:$1.9600
        • 3:$1.6900
        • 10:$1.3700
        • 50:$1.1800
        IRF2204SPBFInternational RectifierINSTOCK50
          IRF2204SPBF
          DISTI # 8657483          		Infineon Technologies AGMOSFET, N, 40V, 170A, D2-PAK
          RoHS: Compliant          		157
          • 1:£1.3000
          • 10:£1.0700
          • 100:£0.9300
          IRF2204SPBF
          DISTI # 8657483          		Infineon Technologies AGMOSFET, N, 40V, 170A, D2-PAK
          RoHS: Compliant          		5
          • 1:$5.2900
          • 10:$4.5000
          • 100:$3.9000
          • 250:$3.6900
          • 500:$3.3100
          • 1000:$2.8100
          • 2000:$2.6600
          • 5000:$2.5700
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          可用性
          庫存:
          Available
          訂購:
          4000
          輸入數量:
          IRF2204SPBF的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
          參考價格（美元）
          數量
          單價
          小計金額
          1
          US$2.81
          US$2.81
          10
          US$2.39
          US$23.90
          100
          US$2.07
          US$207.00
          250
          US$1.96
          US$490.00
          500
          US$1.76
          US$880.00
          1000
          US$1.52
          US$1 520.00
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