SIS892DN-T1-GE3

SIS892DN-T1-GE3
Mfr. #:
SIS892DN-T1-GE3
製造商:
Vishay
描述:
MOSFET N-CH 100V 30A 1212-8 PPAK
生命週期:
製造商新產品
數據表:
SIS892DN-T1-GE3 數據表
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更多信息:
SIS892DN-T1-GE3 更多信息
產品屬性
屬性值
Tags
SIS892, SIS89, SIS8, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 100V 8A 8-Pin PowerPAK 1212-8 T/R
***et Europe
Trans MOSFET N-CH 100V 8A 8-Pin PowerPAK 1212 T/R
***i-Key
MOSFET N-CH 100V 30A 1212-8 PPAK
***ied Electronics & Automation
100V 30A 43W 29 mohms @ 10V
***
N-CHANNEL 100-V (D-S)
***ark
MOSFET,N CH,DIODE,100V,30A,PPAK12128; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.024ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.7W; Operating Temperature Range:-55°C to +150°C;;RoHS Compliant: Yes
***nell
MOSFET,N CH,DIODE,100V,30A,PPAK12128; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On State Resistance:0.024ohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; Current Id Max:8A; Power Dissipation:3.7W
***ment14 APAC
MOSFET,N CH,DIODE,100V,30A,PPAK12128; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.024ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:8A; Power Dissipation Pd:3.7W; Voltage Vgs Max:20V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
ThunderFET® Power MOSFETs
Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.
型號 製造商 描述 庫存 價格
SIS892DN-T1-GE3
DISTI # V36:1790_09216113
Vishay IntertechnologiesTrans MOSFET N-CH 100V 8A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant
0
  • 3000000:$0.6272
  • 1500000:$0.6274
  • 300000:$0.6440
  • 30000:$0.6717
  • 3000:$0.6762
SIS892DN-T1-GE3
DISTI # V72:2272_09216113
Vishay IntertechnologiesTrans MOSFET N-CH 100V 8A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant
0
    SIS892DN-T1-GE3
    DISTI # SIS892DN-T1-GE3CT-ND
    Vishay SiliconixMOSFET N-CH 100V 30A 1212-8 PPAK
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    2531In Stock
    • 1000:$0.7462
    • 500:$0.9452
    • 100:$1.1442
    • 10:$1.4680
    • 1:$1.6400
    SIS892DN-T1-GE3
    DISTI # SIS892DN-T1-GE3DKR-ND
    Vishay SiliconixMOSFET N-CH 100V 30A 1212-8 PPAK
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    2531In Stock
    • 1000:$0.7462
    • 500:$0.9452
    • 100:$1.1442
    • 10:$1.4680
    • 1:$1.6400
    SIS892DN-T1-GE3
    DISTI # SIS892DN-T1-GE3TR-ND
    Vishay SiliconixMOSFET N-CH 100V 30A 1212-8 PPAK
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)
    On Order
    • 15000:$0.6182
    • 6000:$0.6424
    • 3000:$0.6762
    SIS892DN-T1-GE3
    DISTI # SIS892DN-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N-CH 100V 8A 8-Pin PowerPAK 1212 T/R (Alt: SIS892DN-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel
    Asia - 0
      SIS892DN-T1-GE3
      DISTI # SIS892DN-T1-GE3
      Vishay IntertechnologiesTrans MOSFET N-CH 100V 8A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS892DN-T1-GE3)
      RoHS: Compliant
      Min Qty: 3000
      Container: Reel
      Americas - 0
      • 30000:$0.5889
      • 18000:$0.6059
      • 12000:$0.6229
      • 6000:$0.6489
      • 3000:$0.6689
      SIS892DN-T1-GE3
      DISTI # 86R3819
      Vishay IntertechnologiesMOSFET, N CHANNEL, 100V, 30A, POWERPAK 1212-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.024ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins RoHS Compliant: Yes0
      • 1:$0.7770
      • 3000:$0.7770
      SIS892DN-T1-GE3
      DISTI # 94T2851
      Vishay IntertechnologiesMOSFET, N CHANNEL, 100V, 30A, POWERPAK 1212-8,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.024ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V RoHS Compliant: Yes0
      • 1000:$0.8370
      • 500:$1.0400
      • 250:$1.1900
      • 100:$1.3300
      • 50:$1.5000
      • 25:$1.6800
      • 1:$1.8900
      SIS892DN-T1-GE3
      DISTI # 70459593
      Vishay Siliconix100V 30A 43W 29 mohms @ 10V
      RoHS: Compliant
      0
      • 3000:$0.9840
      SIS892DN-T1-GE3
      DISTI # 78-SIS892DN-T1-GE3
      Vishay IntertechnologiesMOSFET 100V 30A 43W 29 mohms @ 10V
      RoHS: Compliant
      8091
      • 1:$1.6000
      • 10:$1.3200
      • 100:$1.0100
      • 500:$0.8740
      • 1000:$0.6890
      • 3000:$0.6430
      • 6000:$0.6110
      • 9000:$0.5880
      SIS892DN-T1-GE3.Vishay IntertechnologiesMOSFET 100V 30A 43W 29 mohms @ 10V
      RoHS: Compliant
      Americas -
      • 10:$1.4940
      • 250:$1.0580
      SIS892DN-T1-GE3Vishay IntertechnologiesMOSFET 100V 30A 43W 29 mohms @ 10V
      RoHS: Compliant
      Americas -
        SIS892DN-T1-GE3
        DISTI # 1859009
        Vishay IntertechnologiesMOSFET,N CH,DIODE,100V,30A,PPAK12128
        RoHS: Compliant
        0
        • 1000:$1.1300
        • 500:$1.4300
        • 100:$1.7300
        • 10:$2.2200
        • 1:$2.4700
        SIS892DN-T1-GE3
        DISTI # 2083727
        Vishay IntertechnologiesMOSFET, N CHANNEL, 100V, 30A, POWERPAK 1
        RoHS: Compliant
        0
        • 6000:$0.9710
        • 3000:$1.0200
        圖片 型號 描述
        SIS892DN-T1-GE3

        Mfr.#: SIS892DN-T1-GE3

        OMO.#: OMO-SIS892DN-T1-GE3

        MOSFET 100V 30A 43W 29 mohms @ 10V
        SIS892DN-T1-GE3

        Mfr.#: SIS892DN-T1-GE3

        OMO.#: OMO-SIS892DN-T1-GE3-VISHAY

        MOSFET N-CH 100V 30A 1212-8 PPAK
        SIS892DN-T1-GE3/S892

        Mfr.#: SIS892DN-T1-GE3/S892

        OMO.#: OMO-SIS892DN-T1-GE3-S892-1190

        全新原裝
        可用性
        庫存:
        Available
        訂購:
        3500
        輸入數量:
        SIS892DN-T1-GE3的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
        參考價格(美元)
        數量
        單價
        小計金額
        1
        US$0.88
        US$0.88
        10
        US$0.84
        US$8.39
        100
        US$0.80
        US$79.52
        500
        US$0.75
        US$375.50
        1000
        US$0.71
        US$706.80
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