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IRFS4620TRLPBF

IRFS4620TRLPBF
Mfr. #:
IRFS4620TRLPBF
製造商:
Infineon / IR
描述:
MOSFET MOSFT 200V 24A 78mOhm 25nC Qg
生命週期:
製造商新產品
數據表:
IRFS4620TRLPBF 數據表
交貨:
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HTML Datasheet:
IRFS4620TRLPBF DatasheetIRFS4620TRLPBF Datasheet (P4-P6)IRFS4620TRLPBF Datasheet (P7-P9)IRFS4620TRLPBF Datasheet (P10)
ECAD Model:
更多信息:
IRFS4620TRLPBF 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
TO-263-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
200 V
Id - 連續漏極電流：
24 A
Rds On - 漏源電阻：
77.5 mOhms
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
25 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 175 C
Pd - 功耗：
144 W
配置：
單身的
頻道模式：
增強
打包：
捲軸
高度：
2.3 mm
長度：
6.5 mm
晶體管類型：
1 N-Channel
寬度：
6.22 mm
品牌：
英飛凌/紅外
正向跨導 - 最小值：
37 S
秋季時間：
14.8 ns
產品類別：
MOSFET
上升時間：
22.4 ns
出廠包裝數量：
800
子類別：
MOSFET
典型關斷延遲時間：
25.4 ns
典型的開啟延遲時間：
13.4 ns
第 # 部分別名：
SP001568008
單位重量：
0.139332 oz
Tags
IRFS462, IRFS46, IRFS4, IRFS, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
IRFS4620PBF N-channel MOSFET Transistor; 24 A; 200 V; 3-Pin D2PAK
***ure Electronics
Single N-Channel 200 V 77.5 mOhm 25 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ical
Trans MOSFET N-CH 200V 24A 3-Pin(2+Tab) D2PAK Tube
***nell
MOSFET, N-CH 200V 24A D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 24A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.0637ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power D
***ure Electronics
Single N-Channel 200 V 0.18 Ohms Surface Mount Power Mosfet - D2PAK-3
*** Source Electronics
MOSFET N-CH 200V 18A D2PAK / Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) D2PAK T/R
*** Stop Electro
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ical
Trans MOSFET N-CH 200V 21A 3-Pin(2+Tab) D2PAK T/R
***i-Key
BUZ30 - SIPMOS POWER TRANSISTOR
***ineon
Infineon's 200V OptiMOS products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems,DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. | Summary of Features: Industrys lowest R DS(on); Lowest Q g and Q gd; Worlds lowest FOM RoHS compliant halogen free MSL 1 rated | Benefits: Highest efficiency; Highest power density; Lowest board space consumption; Minimal device paralleling required; System cost improvement; Enviromentally friendly; Easy-to-design-in products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V110V systems; Isolated DC-DC converters; Lighting for 110V AC networks; HID lamps; Class D audio amplifiers; Uninterruptable power supplies (UPS); LED lighting power supply
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.082Ohm;ID 21A;D2Pak;PD 94W;VGS +/-20V;-55
***ineon SCT
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***et
Trans MOSFET N-CH 150V 21A 3-Pin(2+Tab) D2PAK
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
MOSFET, N, 150V, 21A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:150V; On Resistance Rds(on):82mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:84W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:21A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.6°C/W; Package / Case:D2-PAK; Power Dissipation Pd:84W; Power Dissipation Pd:84W; Power Dissipation on 1 Sq. PCB:3.8W; Pulse Current Idm:84A; SMD Marking:IRF3315S; Termination Type:SMD; Voltage Vds:150V; Voltage Vds Typ:150V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
***ernational Rectifier
200V Single N-Channel Digital Audio HEXFET Power MOSFET Switch in a D2Pak package
***ical
Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) D2PAK Tube
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 18A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ment14 APAC
MOSFET, N CH, 200V, 18A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:200V; On Resistance Rds(on):105mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4.9V; Power Dissipation Pd:100W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:18A; Package / Case:D2-PAK; Power Dissipation Pd:100W; Termination Type:SMD; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***et
Trans MOSFET N-CH 200V 19A 3-Pin(2+Tab) TO-263AB Tube
***inecomponents.com
200V N-Channel PowerTrench MOSFET
***ser
MOSFETs 200V N-Channel Pwr Trench
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:19A; On Resistance, Rds(on):130mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:Yes RoHS Compliant: Yes
***et
N-Channel 150V 22A (Ta) 93W (Tc) Surface Mount D²PAK (TO-263AB)
***i-Key
MOSFET N-CH 150V 22A TO-263AB
***el Electronic
Chip Resistor - Surface Mount 470kOhm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 470K OHM 1% 1/10W 0402
***el Nordic
Contact for details
***icroelectronics
N-channel 200 V, 0.065 Ohm, 30 A, D2PAK STripFET(TM) Power MOSFET
***ure Electronics
N-Channel 200 V 30 A 75 mOhm 125 W Power Mosfet - D2PAK
*** Source Electronics
Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 200V 30A D2PAK
***ark
N CH POWER MOSFET, STripFET, 200V, 30A, D2PAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:30A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:125W RoHS Compliant: Yes
***icroelectronics
N-channel 200 V, 0.065 Ohm, 30 A, D2PAK STripFET(TM) Power MOSFET
***ical
Trans MOSFET N-CH 200V 30A Automotive 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
Single N-Channel 200 V 0.075 Ohm 65 nC 150 W Silicon SMT Mosfet - TO-263-3
***(Formerly Allied Electronics)
IRF640SPBF N-channel MOSFET Transistor; 18 A; 200 V; 3-Pin D2PAK
***ure Electronics
Single N-Channel 200 V 0.18 Ohms Surface Mount Power Mosfet - D2PAK-3
***ical
Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) D2PAK
***ark
N CHANNEL MOSFET, 200V, 18A, D2-PAK; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:18A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: No
***emi
N-Channel Power MOSFET, Logic Level, QFET®, 200 V, 31 A, 80 mΩ, D2PAK
***ure Electronics
FQB34N20L Series 200 V 31 A 75 mOhm SMT N-Channel QFET Mosfet - D2PAK-3
***ical
Trans MOSFET N-CH 200V 31A 3-Pin (2+Tab) D2PAK T/R
***r Electronics
Power Field-Effect Transistor, 31A I(D), 200V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ment14 APAC
MOSFET, N, SMD, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:200V; On Resistance Rds(on):75mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:180W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:2; SVHC:No SVHC (19-Dec-2011); Current Id Max:31A; Package / Case:D2-PAK; Power Dissipation Pd:180W; Power Dissipation on 1 Sq. PCB:3.13W; Termination Type:SMD; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;D2Pak;PD 150W;VGS +/-20V;-55
***ure Electronics
Single N-Channel 200 V 0.15 Ohm 67nC HEXFET® Power Mosfet - D2PAK
*** Source Electronics
Trans MOSFET N-CH Si 200V 18A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 200V 18A D2PAK
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***eco
IRF640NSTRRPBF,MOSFET, 200V, 1 8A, 150 MOHM, 44.7 NC QG, D2-
***ark
Channel Type:n Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:18A; Transistor Mounting:surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:150W; No. Of Pins:3Pins Rohs Compliant: Yes
***roFlash
Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
200-250V HEXFET® Power MOSFETs
Infineon 200-250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200-250V HEXFET® Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Infineon HEXFET® Power MOSFETs are known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More
型號 製造商 描述 庫存 價格
IRFS4620TRLPBF
DISTI # 31077275		Infineon Technologies AGTrans MOSFET N-CH 200V 24A 3-Pin(2+Tab) D2PAK T/R2400
  • 8000:$0.6460
  • 4800:$0.6575
  • 3200:$0.6805
  • 1600:$0.7065
  • 800:$0.7324
IRFS4620TRLPBF
DISTI # IRFS4620TRLPBFCT-ND		Infineon Technologies AGMOSFET N-CH 200V 24A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		10316In Stock
  • 100:$1.8186
  • 10:$2.2320
  • 1:$2.4600
IRFS4620TRLPBF
DISTI # IRFS4620TRLPBFDKR-ND		Infineon Technologies AGMOSFET N-CH 200V 24A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		10316In Stock
  • 100:$1.8186
  • 10:$2.2320
  • 1:$2.4600
IRFS4620TRLPBF
DISTI # IRFS4620TRLPBFTR-ND		Infineon Technologies AGMOSFET N-CH 200V 24A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		9600In Stock
  • 800:$1.2773
IRFS4620TRLPBF
DISTI # C1S327400968636		Infineon Technologies AGTrans MOSFET N-CH 200V 24A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		800
  • 200:$1.0600
  • 100:$1.2000
  • 50:$1.4200
  • 10:$1.7300
  • 1:$3.3900
IRFS4620TRLPBF
DISTI # C1S322000495775		Infineon Technologies AGTrans MOSFET N-CH 200V 24A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		4000
  • 2400:$0.7770
  • 1600:$0.8370
  • 800:$1.0900
IRFS4620TRLPBF
DISTI # IRFS4620TRLPBF		Infineon Technologies AGTrans MOSFET N-CH 200V 24A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRFS4620TRLPBF)
RoHS: Compliant
Min Qty: 800
Container: Reel		Americas - 0
  • 800:$0.7629
  • 1600:$0.7359
  • 3200:$0.7089
  • 4800:$0.6849
  • 8000:$0.6729
IRFS4620TRLPBF
DISTI # SP001568008		Infineon Technologies AGTrans MOSFET N-CH 200V 24A 3-Pin(2+Tab) D2PAK T/R (Alt: SP001568008)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel		Europe - 0
  • 800:€0.9259
  • 1600:€0.7579
  • 3200:€0.6949
  • 4800:€0.6409
  • 8000:€0.5949
IRFS4620TRLPBF
DISTI # 70019755		Infineon Technologies AGIRFS4620TRLPBF N-channel MOSFET Transistor,24 A,200 V,3+Tab-Pin D2PAK
RoHS: Compliant		0
  • 800:$1.9000
IRFS4620TRLPBF
DISTI # 942-IRFS4620TRLPBF		Infineon Technologies AGMOSFET MOSFT 200V 24A 78mOhm 25nC Qg
RoHS: Compliant		12228
  • 1:$1.9500
  • 10:$1.6600
  • 100:$1.3300
  • 500:$1.1600
  • 800:$0.9610
IRFS4620TRLPBFInfineon Technologies AGSingle N-Channel 200V 77.5 mOhm 25 nC HEXFET Power Mosfet - D2PAK
RoHS: Compliant		800Reel
  • 800:$0.8300
IRFS4620TRLPBF
DISTI # 9155051P		Infineon Technologies AGMOSFET N-CHANNEL HEXFET 200V 24A D2PAK, RL390
  • 20:£1.0790
  • 100:£0.9610
  • 250:£0.9010
  • 500:£0.8390
IRFS4620TRLPBFInfineon Technologies AGINSTOCK100
    IRFS4620TRLPBF
    DISTI # 2725992    		Infineon Technologies AGMOSFET, N-CH, 200V, 24A, TO-263AB
    RoHS: Compliant    		183
    • 5:£1.0800
    • 25:£1.0200
    • 100:£0.9610
    • 250:£0.9010
    • 500:£0.7270
    IRFS4620TRLPBF
    DISTI # XSFP00000112801    		Infineon Technologies AG 
    RoHS: Compliant    		27459
    • 800:$1.6600
    • 27459:$1.5100
    IRFS4620TRLPBF
    DISTI # 2725992    		Infineon Technologies AGMOSFET, N-CH, 200V, 24A, TO-263AB
    RoHS: Compliant    		170
    • 1:$3.6900
    • 10:$3.3300
    • 100:$2.6800
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    ABS25-32.768KHZ-6-T

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    		 Crystals 32.768KHz 6pF 20ppm -40C +85C
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    C3216X7T2W104K160AE

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    可用性
    庫存:
    Available
    訂購:
    1985
    輸入數量:
    IRFS4620TRLPBF的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$1.95
    US$1.95
    10
    US$1.65
    US$16.50
    100
    US$1.32
    US$132.00
    500
    US$1.16
    US$580.00
    由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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