FF600R12ME4EB11BOSA1

FF600R12ME4EB11BOSA1
Mfr. #:
FF600R12ME4EB11BOSA1
製造商:
Infineon Technologies
描述:
IGBT Modules
生命週期:
製造商新產品
數據表:
FF600R12ME4EB11BOSA1 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
FF600R12ME4EB11BOSA1 更多信息
產品屬性
屬性值
製造商:
英飛凌
產品分類:
IGBT 模塊
RoHS:
Y
產品:
IGBT 矽模塊
配置:
公共發射器
集電極-發射極電壓 VCEO 最大值:
1200 V
集電極-發射極飽和電壓:
1.75 V
25 C 時的連續集電極電流:
600 A
柵極-發射極漏電流:
400 nA
Pd - 功耗:
20 mW
包裝/案例:
152 mm x 62.5 mm x 20.5 mm
最低工作溫度:
- 40 C
最高工作溫度:
+ 150 C
打包:
托盤
品牌:
英飛凌科技
安裝方式:
壓合
最大柵極發射極電壓:
15 V
產品類別:
IGBT 模塊
出廠包裝數量:
6
子類別:
IGBT
第 # 部分別名:
SP001671626
Tags
FF600R12ME4, FF600R12M, FF600R12, FF600R1, FF600, FF60, FF6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
EconoDUAL3 Module with Trench/Fieldstop IGBT4 and Emitter Controlled Diode and NTC 1200V Tray
***ark
Igbt Mod, Dual N-Ch, 1.2Kv, 600A; Transistor Polarity:dual N Channel; Dc Collector Current:600A; Collector Emitter Saturation Voltage Vce(On):1.75V; Power Dissipation Pd:-; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes
***ineon
Summary of Features: EconoDUAL 3 with Common Emitter topology; Low VCEsat; Tvj op = 150C; VISO = 3.4kVrms 1 min ( 4.8kV DC 1 min); Standard Housing; PressFIT control pins and screw power terminals; Compact and robust design with molded terminals | Benefits: 3-level NPC2 configuration based on established EconoDUAL 3 housing; In line with UL requirements for 1500V solar inverters; Compact modules; Easy and most reliable assembly; No plugs and cables required | Target Applications: solar; ups; drives
Infineon EconoDUAL™ 3 with Common Emitter
Infineon EconoDUAL™ 3 with Common Emitter are suited for 1500V and 1000V solar inverters, and are dedicated modules for 3-level NPC2 topologies. The EconoDUAL™ 3 is widely used in 1000V systems for solar applications and provides a new solution for relying on the established EconoDUAL™ 3 housing in future designs. Two new EconoDUAL™ 3 modules with Common Emitter configuration are available, the FF450R12ME4E_B11 and FF600R12ME4E_B11. Both are equipped with the proven PressFIT housing, enabling for fast and cost efficient assembly in the production line.
型號 製造商 描述 庫存 價格
FF600R12ME4EB11BOSA1
DISTI # V99:2348_18787569
Infineon Technologies AGMEDIUM POWER ECONO1
  • 1:$242.6500
FF600R12ME4EB11BOSA1
DISTI # FF600R12ME4EB11BOSA1-ND
Infineon Technologies AGMOD IGBT MED PWR ECONOD-5
RoHS: Compliant
Min Qty: 1
Container: Tray
6In Stock
  • 12:$232.6908
  • 1:$242.9600
FF600R12ME4EB11BOSA1
DISTI # 31575567
Infineon Technologies AGMEDIUM POWER ECONO6
  • 25:$218.9385
  • 10:$222.0570
  • 6:$227.7000
FF600R12ME4EB11BOSA1
DISTI # 30304246
Infineon Technologies AGMEDIUM POWER ECONO1
  • 1:$242.6500
FF600R12ME4EB11BOSA1
DISTI # FF600R12ME4EB11BOSA1
Infineon Technologies AGEconoDUAL3 Module with Trench/Fieldstop IGBT4 and Emitter Controlled Diode and NTC 1200V Tray - Trays (Alt: FF600R12ME4EB11BOSA1)
RoHS: Compliant
Min Qty: 6
Container: Tray
Americas - 0
  • 60:$206.0900
  • 36:$211.1900
  • 24:$216.4900
  • 12:$222.1900
  • 6:$225.0900
FF600R12ME4EB11BOSA1
DISTI # SP001671626
Infineon Technologies AGEconoDUAL3 Module with Trench/Fieldstop IGBT4 and Emitter Controlled Diode and NTC 1200V Tray (Alt: SP001671626)
RoHS: Compliant
Min Qty: 1
Container: Tray
Europe - 0
  • 1000:€204.7900
  • 500:€207.6900
  • 100:€210.0900
  • 50:€213.7900
  • 25:€225.0900
  • 10:€227.4900
  • 1:€234.4900
FF600R12ME4EB11BOSA1
DISTI # 93AC7011
Infineon Technologies AGIGBT MOD, DUAL N-CH, 1.2KV, 600A,Transistor Polarity:Dual N Channel,DC Collector Current:600A,Collector Emitter Saturation Voltage Vce(on):1.75V,Power Dissipation Pd:-,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case RoHS Compliant: Yes3
  • 25:$235.1200
  • 10:$238.4600
  • 5:$244.5300
  • 1:$250.5600
FF600R12ME4EB11BOSA1
DISTI # 726-FF600R12ME4EB11
Infineon Technologies AGIGBT Modules
RoHS: Compliant
8
  • 1:$248.0800
  • 5:$242.1100
  • 10:$236.1000
  • 25:$232.7900
FF600R12ME4EB11BOSA1
DISTI # 2986369
Infineon Technologies AGIGBT MOD, DUAL N-CH, 1.2KV, 600A
RoHS: Compliant
3
  • 1:$349.4200
FF600R12ME4EB11BOSA1
DISTI # 2986369
Infineon Technologies AGIGBT MOD, DUAL N-CH, 1.2KV, 600A3
  • 5:£169.0000
  • 1:£180.0000
圖片 型號 描述
FP150R12KT4

Mfr.#: FP150R12KT4

OMO.#: OMO-FP150R12KT4

IGBT Modules
FP150R12KT4

Mfr.#: FP150R12KT4

OMO.#: OMO-FP150R12KT4-1190

Trans IGBT Module N-CH 1.2KV 150A 43-Pin (Alt: FP150R12KT4)
可用性
庫存:
14
訂購:
1997
輸入數量:
FF600R12ME4EB11BOSA1的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$248.08
US$248.08
5
US$242.11
US$1 210.55
10
US$236.10
US$2 361.00
25
US$232.79
US$5 819.75
由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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