OMO ElectronicOMO Electronic
Expand menu
您好，登錄我的帳戶
0 購物車

SIR624DP-T1-RE3

SIR624DP-T1-RE3
Mfr. #:
SIR624DP-T1-RE3
製造商:
Vishay / Siliconix
描述:
MOSFET 200V Vds 20V Vgs PowerPAK SO-8
生命週期:
製造商新產品
數據表:
SIR624DP-T1-RE3 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
產品屬性
屬性值
製造商：
威世
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
PowerPAK SO-8
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
200 V
Id - 連續漏極電流：
18.6 A
Rds On - 漏源電阻：
60 mOhms
Vgs th - 柵源閾值電壓：
2 V
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
30 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
52 W
配置：
單身的
頻道模式：
增強
商品名：
TrenchFET、PowerPAK
打包：
捲軸
系列：
先生
晶體管類型：
1 N-Channel
品牌：
威世 / Siliconix
正向跨導 - 最小值：
26 S
秋季時間：
8 ns
產品類別：
MOSFET
上升時間：
18 ns
出廠包裝數量：
3000
子類別：
MOSFET
典型關斷延遲時間：
16 ns
典型的開啟延遲時間：
9 ns
Tags
SIR62, SIR6, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Transistor MOSFET N-Channel 200V 18.6A 8-Pin PowerPAK SOIC
***i-Key
N-CHANNEL 200-V (D-S) MOSFET
***ark
Mosfet, N-Ch, 200V, 18.6A, 150Deg C, 52W; Transistor Polarity:n Channel; Continuous Drain Current Id:18.6A; Drain Source Voltage Vds:200V; On Resistance Rds(On):0.05Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 200V, 18.6A, 150DEG C, 52W; Transistor Polarity:N Channel; Continuous Drain Current Id:18.6A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.05ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:52W; Transistor Case Style:PowerPAK SO; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:ThunderFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANAL N, 200V, 18.6A, 150°C, 52W; Polarità Transistor:Canale N; Corrente Continua di Drain Id:18.6A; Tensione Drain Source Vds:200V; Resistenza di Attivazione Rds(on):0.05ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:52W; Modello Case Transistor:PowerPAK SO; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:ThunderFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
圖片 型號 描述
SIR624DP-T1-GE3

Mfr.#: SIR624DP-T1-GE3

OMO.#: OMO-SIR624DP-T1-GE3

 MOSFET 200V Vds 20V Vgs PowerPAK SO-8
SIR624DP-T1-RE3

Mfr.#: SIR624DP-T1-RE3

OMO.#: OMO-SIR624DP-T1-RE3

 MOSFET 200V Vds 20V Vgs PowerPAK SO-8
SIR624DP-T1-GE3

Mfr.#: SIR624DP-T1-GE3

OMO.#: OMO-SIR624DP-T1-GE3-VISHAY

 MOSFET N-CH 200V 18.6A SO-8
可用性
庫存:
Available
訂購:
1000
輸入數量:
SIR624DP-T1-RE3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
從...開始
最新產品
More Newest Products
Top