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FCP850N80Z

FCP850N80Z
Mfr. #:
FCP850N80Z
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET 800V 8A NChn MOSFET SuperFET II, FRFET
生命週期:
製造商新產品
數據表:
FCP850N80Z 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
FCP850N80Z 更多信息
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-220-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
800 V
Id - 連續漏極電流：
8 A
Rds On - 漏源電阻：
850 mOhms
Vgs th - 柵源閾值電壓：
2.5 V
Vgs - 柵源電壓：
20 V, 30 V
Qg - 門電荷：
22 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
136 W
配置：
單身的
頻道模式：
增強
商品名：
超級場效應晶體管 II
打包：
管子
高度：
16.3 mm
長度：
10.67 mm
系列：
FCP850N80Z
晶體管類型：
1 N-Channel
寬度：
4.7 mm
品牌：
安森美半導體/飛兆半導體
正向跨導 - 最小值：
3.5 S
秋季時間：
4.5 ns
產品類別：
MOSFET
上升時間：
10 ns
出廠包裝數量：
800
子類別：
MOSFET
典型關斷延遲時間：
40 ns
典型的開啟延遲時間：
16 ns
單位重量：
0.063493 oz
Tags
FCP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power MOSFET, SUPERFET® II, 800 V, 6 A, 850 mΩ, TO-220
***et Europe
SuperFET2 800V 850mOhm Zener embedded, TO220 PKG
***ical
Trans MOSFET N-CH 800V 8A Tube
***i-Key
SUPERFET2 800V 850MOHM ZENER
***ark
Mosfet, N-Ch, 800V, 8A, To-220-3; Transistor Polarity:n Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:800V; On Resistance Rds(On):0.71Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 800V, 8A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.71ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Dissipation Pd:136W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:SuperFET II Series; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018)
***nell
MOSFET, CAN-N, 800V, 8A, TO-220-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:8A; Tensione Drain Source Vds:800V; Resistenza di Attivazione Rds(on):0.71ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4.5V; Dissipazione di Potenza Pd:136W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:SuperFET II Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018)
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Inaddition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress. Consequently, SuperFET IIMOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power andindustrial power applications.
SuperFET® II Power MOSFETs
ON Semiconductor SuperFET® II Power MOSFETs are a new proprietary generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. These SuperFET® II MOSFETs are suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.Learn More
型號 製造商 描述 庫存 價格
FCP850N80Z
DISTI # V99:2348_16116256		ON SemiconductorSUPERFET2 800V 850MOHM ZENER E755
  • 2500:$0.9982
  • 1000:$1.0517
  • 500:$1.2649
  • 100:$1.4358
  • 10:$1.5167
  • 1:$1.7505
FCP850N80Z
DISTI # V36:1790_16116256		ON SemiconductorSUPERFET2 800V 850MOHM ZENER E0
  • 400000:$0.6343
  • 80000:$0.6367
  • 8000:$0.6396
  • 800:$0.6400
FCP850N80Z
DISTI # FCP850N80Z-ND		ON SemiconductorMOSFET N-CH 800V 8A
RoHS: Compliant
Min Qty: 800
Container: Tube		Temporarily Out of Stock
  • 800:$1.0005
FCP850N80Z
DISTI # 33134473		ON SemiconductorSUPERFET2 800V 850MOHM ZENER E21600
  • 800:$0.6400
FCP850N80Z
DISTI # 25895789		ON SemiconductorSUPERFET2 800V 850MOHM ZENER E755
  • 9:$1.7505
FCP850N80Z
DISTI # FCP850N80Z		ON SemiconductorSuperFET2 800V 850mOhm Zener embedded, TO220 PKG - Bulk (Alt: FCP850N80Z)
Min Qty: 298
Container: Bulk		Americas - 0
  • 2980:$1.0369
  • 1490:$1.0629
  • 894:$1.0759
  • 596:$1.0899
  • 298:$1.0979
FCP850N80Z
DISTI # FCP850N80Z		ON SemiconductorSuperFET2 800V 850mOhm Zener embedded, TO220 PKG - Rail/Tube (Alt: FCP850N80Z)
RoHS: Compliant
Min Qty: 800
Container: Tube		Americas - 0
  • 8000:$0.6719
  • 4800:$0.6889
  • 3200:$0.6979
  • 1600:$0.7069
  • 800:$0.7109
FCP850N80Z
DISTI # FCP850N80Z		ON SemiconductorSuperFET2 800V 850mOhm Zener embedded, TO220 PKG (Alt: FCP850N80Z)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€0.7569
  • 500:€0.7659
  • 100:€0.7819
  • 50:€0.7979
  • 25:€0.8249
  • 10:€0.9299
  • 1:€1.0729
FCP850N80Z
DISTI # FCP850N80Z		ON SemiconductorSuperFET2 800V 850mOhm Zener embedded, TO220 PKG (Alt: FCP850N80Z)
RoHS: Compliant
Min Qty: 800		Asia - 0
  • 40000:$0.8926
  • 20000:$0.9075
  • 8000:$0.9388
  • 4000:$0.9723
  • 2400:$1.0083
  • 1600:$1.0471
  • 800:$1.0890
FCP850N80Z
DISTI # 84Y5820		ON SemiconductorMOSFET, N-CH, 800V, 8A, TO-220-3,Transistor Polarity:N Channel,Continuous Drain Current Id:8A,Drain Source Voltage Vds:800V,On Resistance Rds(on):0.71ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4.5V,Power RoHS Compliant: Yes392
  • 5000:$1.2900
  • 2500:$1.3300
  • 1000:$1.4100
  • 500:$1.6700
  • 100:$1.8700
  • 10:$2.2800
  • 1:$2.6500
FCP850N80Z
DISTI # 512-FCP850N80Z		ON SemiconductorMOSFET 800V 8A NChn MOSFET SuperFET II, FRFET
RoHS: Compliant		928
  • 1:$1.6000
  • 10:$1.3600
  • 100:$1.0800
  • 500:$0.9520
  • 1000:$0.7890
  • 2500:$0.7780
FCP850N80ZFairchild Semiconductor Corporation 
RoHS: Not Compliant		750
  • 1000:$0.8000
  • 500:$0.8500
  • 100:$0.8800
  • 25:$0.9200
  • 1:$0.9900
FCP850N80Z
DISTI # 2565210		ON SemiconductorMOSFET, N-CH, 800V, 8A, TO-220-3
RoHS: Compliant		392
  • 1600:$1.8900
  • 800:$2.0500
  • 100:$2.9300
  • 10:$3.6400
  • 1:$4.0200
FCP850N80Z
DISTI # 2565210		ON SemiconductorMOSFET, N-CH, 800V, 8A, TO-220-3392
  • 500:£0.6900
  • 250:£0.7360
  • 100:£0.7830
  • 25:£0.9880
  • 5:£1.0800
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FCP190N65S3

Mfr.#: FCP190N65S3

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 MOSFET SuperFET3 650V 190 mOhm, TO220F PKG
IPP80R600P7XKSA1

Mfr.#: IPP80R600P7XKSA1

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8020.5068.G

Mfr.#: 8020.5068.G

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可用性
庫存:
928
訂購:
2911
輸入數量:
FCP850N80Z的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$1.60
US$1.60
10
US$1.36
US$13.60
100
US$1.08
US$108.00
500
US$0.95
US$476.00
1000
US$0.79
US$789.00
2500
US$0.78
US$1 945.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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