IHW25N120E1XKSA1

Mfr. #:: IHW25N120E1XKSA1
製造商:: Infineon Technologies
描述:: IGBT NPT/TRENCH 1200V 50A TO247
生命週期:: 製造商新產品
數據表:: IHW25N120E1XKSA1 數據表
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產品屬性
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Tags: IHW25N120E, IHW25N, IHW25, IHW2, IHW

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IHW25N120E1XKSA1 描述

***ical: Trans IGBT Chip N-CH 1200V 50A 231000mW 3-Pin(3+Tab) TO-247 Tube

***ark: Igbt, Single, 1.2Kv, 50A, To-247; Dc Collector Current:50A; Collector Emitter Saturation Voltage Vce(On):1.5V; Power Dissipation Pd:231W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes

***ineon: The new RC-E IGBTs are cost- and feature-optimized specifically for low- to mid-range induction cookers and other resonant applications. The RC-E technology uses an IGBT with monolithically integrated reverse conduction diode to set the new benchmark for price/performance and ease-of-use in the industry. This new family offers Infineons proven quality in RC IGBTs and meets all the needs of so switching applications, including attractive pricing compared to other general purpose IGBTs. | Summary of Features: Low E off and V ce(sat); Designed for so switching applications; Optimized for performance with switching frequencies from 18kHz40kHz; Most commonly used blocking voltage, 1200V | Benefits: Price versus performance leader for cost-e ective designs; Low losses help designs meet energy efficiency standards; Drop-in replacement for existing designs; Soft switching for good EMI behavior | Target Applications: Low- to mid-range induction cookers

Market price

型號	製造商	描述	庫存	價格
IHW25N120E1XKSA1 DISTI # V99:2348_16563132	Infineon Technologies AG	Trans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247 Tube	239	500:$2.4840 250:$2.6890 100:$2.9190 10:$3.3630 1:$4.3483
IHW25N120E1XKSA1 DISTI # V36:1790_16563132	Infineon Technologies AG	Trans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247 Tube	0	240000:$1.7530 120000:$1.7570 24000:$2.4100 2400:$3.7460 240:$3.9800
IHW25N120E1XKSA1 DISTI # IHW25N120E1XKSA1-ND	Infineon Technologies AG	IGBT NPT/TRENCH 1200V 50A TO247 RoHS: Compliant Min Qty: 1 Container: Tube	155In Stock	2640:$2.1064 720:$2.6225 240:$3.0807 25:$3.5548 10:$3.7600 1:$4.1900
IHW25N120E1XKSA1 DISTI # 31691675	Infineon Technologies AG	Trans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247 Tube	239	3:$4.3483
IHW25N120E1XKSA1 DISTI # IHW25N120E1XKSA1	Infineon Technologies AG	Trans IGBT Chip N-CH 1200V 50A 3 TO-247 Tube - Rail/Tube (Alt: IHW25N120E1XKSA1) RoHS: Compliant Min Qty: 240 Container: Tube	Americas - 0	1440:$1.8900 2400:$1.8900 480:$1.9900 960:$1.9900 240:$2.0900
IHW25N120E1XKSA1 DISTI # SP001391910	Infineon Technologies AG	Trans IGBT Chip N-CH 1200V 50A 3 TO-247 Tube (Alt: SP001391910) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1000:€1.4900 500:€1.5900 100:€1.6900 25:€1.7900 50:€1.7900 10:€1.8900 1:€2.0900
IHW25N120E1XKSA1 DISTI # 34AC1619	Infineon Technologies AG	IGBT, SINGLE, 1.2KV, 50A, TO-247,DC Collector Current:50A,Collector Emitter Saturation Voltage Vce(on):1.5V,Power Dissipation Pd:231W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes	2146	500:$2.5100 250:$2.8100 100:$2.9600 50:$3.1100 25:$3.2600 10:$3.4100 1:$4.0200
IHW25N120E1XKSA1 DISTI # 726-IHW25N120E1XKSA1	Infineon Technologies AG	IGBT Transistors IGBT PRODUCTS RoHS: Compliant	2304	1:$3.9800 10:$3.3800 100:$2.9300 250:$2.7800 500:$2.4900
IHW25N120E1XKSA1 DISTI # 2781025	Infineon Technologies AG	IGBT, SINGLE, 1.2KV, 50A, TO-247 RoHS: Compliant	2146	100:$3.2400 10:$3.6500 1:$3.9100
IHW25N120E1XKSA1 DISTI # 2781025	Infineon Technologies AG	IGBT, SINGLE, 1.2KV, 50A, TO-247	2146	500:£1.9400 250:£2.1600 100:£2.2800 10:£2.6400 1:£3.4600

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