MRFE6VP6300HSR5

Mfr. #:: MRFE6VP6300HSR5
製造商:: NXP / Freescale
描述:: RF MOSFET Transistors VHV6 300W50VISM NI780S-4
生命週期:: 製造商新產品
數據表:: MRFE6VP6300HSR5 數據表
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更多信息:: MRFE6VP6300HSR5 更多信息

產品屬性
屬性值

製造商：: 恩智浦

產品分類：: 射頻 MOSFET 晶體管

RoHS：: Y

晶體管極性：: N通道

技術：: 矽

Vds - 漏源擊穿電壓：: 130 V

獲得：: 26.6 dB

輸出功率：: 300 W

最低工作溫度：: - 30 C

最高工作溫度：: + 150 C

安裝方式：: 貼片/貼片

包裝/案例：: NI-780S-4

打包：: 捲軸

配置：: 單身的

工作頻率：: 1.8 MHz to 600 MHz

系列：: MRFE6VP6300

類型：: 射頻功率MOSFET

品牌：: 恩智浦/飛思卡爾

Pd - 功耗：: 1.05 kW

產品類別：: 射頻 MOSFET 晶體管

出廠包裝數量：: 50

子類別：: MOSFET

Vgs - 柵源電壓：: 10 V

Vgs th - 柵源閾值電壓：: 2.2 V

第 # 部分別名：: 935314385178

單位重量：: 0.161213 oz

Tags: MRFE6VP6300H, MRFE6VP63, MRFE6VP6, MRFE6VP, MRFE6V, MRFE6, MRFE, MRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MRFE6VP6300HSR5 描述

***W: RF Power Transistor,1.8 to 600 MHz, 300 W, Typ Gain in dB is 25 @ 130 MHz, 50 V, LDMOS, SOT1826

***escale Semiconductor: Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V

***et: LATERAL N-CHANNEL BROADBAND RF POWER MOSFET, 1.8-600 MHZ, 30

***ical: Trans RF MOSFET N-CH 130V 5-Pin NI-780S T/R

***et Europe: Trans MOSFET N-CH 130V 4-Pin NI-780S T/R

***hardson RFPD: RF POWER TRANSISTOR LDMOS

***i-Key: FET RF 2CH 130V 230MHZ NI780S-4

***ark: RF POWER FET, N CH, 125V, NI-780S-4; Transistor Type:RF MOSFET; Drain Source Voltage Vds:125V; Continuous Drain Current Id:100mA; Power Dissipation Pd:300W; Operating Frequency Min:1.8MHz; Operating Frequency Max:600MHz; Gain:26.5dB ;RoHS Compliant: Yes

MRFE6VP6300HSR5 更多信息

MRFE6VPx Lateral N-Ch Broadband RF Power MOSFETs: NXP's MRFE6VPx Lateral N-Channel Broadband RF Power MOSFETs are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz. They can be used single-ended or in a push-pull configuration and are suitable for linear applications with appropriate biasing. These RF MOSFETs are capable of handling a load mismatch of 65:1 VSWR, a 50 VDC, 230 MHz at all phase angles.Learn More

Market price

型號	製造商	描述	庫存	價格
MRFE6VP6300HSR5 DISTI # MRFE6VP6300HSR5-ND	NXP Semiconductors	FET RF 2CH 130V 230MHZ NI780S-4 RoHS: Compliant Min Qty: 50 Container: Tape & Reel (TR)	Temporarily Out of Stock	50:$95.5168
MRFE6VP6300HSR5 DISTI # MRFE6VP6300HSR5	Avnet, Inc.	Trans MOSFET N-CH 130V 4-Pin NI-780S T/R - Tape and Reel (Alt: MRFE6VP6300HSR5) RoHS: Compliant Min Qty: 50 Container: Reel	Americas - 0	50:$97.2900 100:$93.4900 200:$89.7900 300:$86.5900 500:$84.8900
MRFE6VP6300HSR5 DISTI # 13T4415	NXP Semiconductors	RF POWER FET, N CHANNEL, 125V, NI-780S-4,Drain Source Voltage Vds:125V,Continuous Drain Current Id:100mA,Power Dissipation Pd:300W,Operating Frequency Min:1.8MHz,Operating Frequency Max:600MHz,RF Transistor Case:NI-780S,MSL:- RoHS Compliant: Yes	0	1:$111.5100 10:$105.5200 25:$100.1400 50:$96.8000 100:$88.8200 250:$86.1900 500:$83.4900
MRFE6VP6300HSR5 DISTI # 841-MRFE6VP6300HSR5	NXP Semiconductors	RF MOSFET Transistors VHV6 300W50VISM NI780S-4 RoHS: Compliant	0	50:$95.5200
MRFE6VP6300HSR5 DISTI # MRFE6VP6300HSR5	NXP Semiconductors	RF POWER TRANSISTOR RoHS: Compliant	25	1:$111.6900 10:$103.2200 25:$100.1900

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