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BSC016N06NSATMA1

BSC016N06NSATMA1
Mfr. #:
BSC016N06NSATMA1
製造商:
Infineon Technologies
描述:
MOSFET N-Ch 60V 100A DSON-8 OptiMOS
生命週期:
製造商新產品
數據表:
BSC016N06NSATMA1 數據表
交貨:
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ECAD Model:
更多信息:
BSC016N06NSATMA1 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
TDSON-8
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
60 V
Id - 連續漏極電流：
100 A
Rds On - 漏源電阻：
1.4 mOhms
Vgs th - 柵源閾值電壓：
1.2 V
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
95 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
139 W
配置：
單身的
頻道模式：
增強
商品名：
優化MOS
打包：
捲軸
高度：
1.27 mm
長度：
5.9 mm
系列：
OptiMOS 5
晶體管類型：
1 N-Channel
寬度：
5.15 mm
品牌：
英飛凌科技
正向跨導 - 最小值：
70 S
秋季時間：
9 ns
產品類別：
MOSFET
上升時間：
9 ns
出廠包裝數量：
5000
子類別：
MOSFET
典型關斷延遲時間：
35 ns
典型的開啟延遲時間：
19 ns
第 # 部分別名：
BSC016N06NS BSC16N6NSXT SP000924882
單位重量：
0.007055 oz
Tags
BSC016N06, BSC016, BSC01, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 60 V 1.6 mOhm 71 nC OptiMOS™ Power Mosfet - TDSON-8 FL
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:100A; On Resistance Rds(On):0.0014Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V Rohs Compliant: Yes
***ineon SCT
OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TDSON-8, RoHS
***nell
MOSFET, N CH, 60V, 100A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0014ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V; Power Dissipation Pd: 139W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package, D2PAK-3, RoHS
***ure Electronics
Single N-Channel 60 V 5.1 mOhm 88 nC HEXFET® Power Mosfet - D2PAK
***Yang
Trans MOSFET N-CH 60V 110A 3-Pin D2PAK T/R - Tape and Reel
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 110A I(D), 60V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:110A; On Resistance Rds(On):0.0042Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V Rohs Compliant: Yes
***ark
Mosfet Transistor, N Channel, 160 A, 60 V, 3.3 Mohm, 10 V, 4 V
***ure Electronics
Single N-Channel 60 V 4.2 mOhm 85 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***(Formerly Allied Electronics)
MOSFET; N Ch.; 60V; 160A; 4.2 MOHM; 85 NC QG; D2-PAK; Pb-Free
***C
Trans MOSFET N-CH 60V 160A 3-Pin(2+Tab) D2PAK T/R Trans MOSFET N-CH 60V 160A 3-Pin(2+Tab) D2PAK T/R Trans MOSFET N-CH 60V 160A 3-Pin(2+Tab) D2PAK T/R
***nell
MOSFET, N, 60V, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 160A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissip
***icontronic
Power Field-Effect Transistor, 120A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ure Electronics
N-Channel 60 V 7 mOhm Surface Mount PowerTrench Mosfet D2PAK-3
***emi
N-Channel PowerTrench® MOSFET 60V, 80A, 7mΩ
***Yang
Trans MOSFET N-CH 60V 80A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***r Electronics
Power Field-Effect Transistor, 15A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ment14 APAC
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:60V; On Resistance Rds(on):6.1mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:175W; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:TO-263; Power Dissipation Pd:175W; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
*** Electronics
In a Pack of 5, N-Channel MOSFET, 100 A, 60 V, 8-Pin Power 56 ON Semiconductor FDMS030N06B
***ure Electronics
Single N-Channel 60 V 3 mOhm 75 nC 2.5 W PowerTrench SMT Mosfet - POWER 56-8
***emi
N-Channel PowerTrench® MOSFET 60V, 100A, 3mΩ
***ment14 APAC
MOSFET, N-CH, 60V, 100A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Source Voltage Vds:60V; On Resistance
***r Electronics
Power Field-Effect Transistor, 22.1A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***nell
MOSFET, N-CH, 60V, 100A, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0024ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.3V; Power Dissipation Pd: 104W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***r Electronics
Power Field-Effect Transistor, 80A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ical
Trans MOSFET N-CH 60V 80A Automotive 3-Pin(2+Tab) DPAK T/R
***ure Electronics
N-Channel 60 V 6.5 mO Surface Mount STripFET™ F6 Power Mosfet - TO-252
***icroelectronics
Automotive-grade N-channel 60 V, 4.4 mOhm typ., 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a DPAK package
***el Electronic
NXP MCIMX535DVV1C MPU, CORTEX-A8, I.MX53, R2.1, 529BGA
***icroelectronics SCT
Automotive Power Discrete, 60V, 80A, DPAK, Tape and Reel
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
20-60V OptiMOS Power MOSFETs
Infineon's 20-60V OptiMOS Power MOSFETs are innovative products that serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These devices consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. These help customers that face the challenge of growing power demand, higher efficiency and lower cost.Learn More
型號 製造商 描述 庫存 價格
BSC016N06NSATMA1
DISTI # BSC016N06NSATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 60V 30A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		19997In Stock
  • 1000:$1.1500
  • 500:$1.3879
  • 100:$1.7845
  • 10:$2.2210
  • 1:$2.4600
BSC016N06NSATMA1
DISTI # BSC016N06NSATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 60V 30A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		19997In Stock
  • 1000:$1.1500
  • 500:$1.3879
  • 100:$1.7845
  • 10:$2.2210
  • 1:$2.4600
BSC016N06NSATMA1
DISTI # BSC016N06NSATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 60V 30A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		10000In Stock
  • 5000:$1.0010
BSC016N06NSATMA1
DISTI # BSC016N06NSATMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 30A 8-Pin TDSON EP T/R - Tape and Reel (Alt: BSC016N06NSATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.8059
  • 10000:$0.7769
  • 20000:$0.7489
  • 30000:$0.7239
  • 50000:$0.7109
BSC016N06NSATMA1
DISTI # BSC016N06NS		Infineon Technologies AGTrans MOSFET N-CH 60V 30A 8-Pin TDSON EP T/R (Alt: BSC016N06NS)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 0
    BSC016N06NSATMA1
    DISTI # 79X1327    		Infineon Technologies AGMOSFET, N-CH, 60V, 100A, PG-TDSON- 8,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0014ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes0
    • 1:$2.0600
    • 10:$1.7700
    • 25:$1.6700
    • 50:$1.5600
    • 100:$1.4600
    • 250:$1.3500
    • 500:$1.3000
    • 1000:$1.2600
    BSC016N06NSATMA1.
    DISTI # 27AC1071    		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0014ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power Dissipation Pd:139W,No. of Pins:8Pins RoHS Compliant: Yes0
    • 1:$0.8060
    • 10000:$0.7770
    • 20000:$0.7490
    • 30000:$0.7240
    • 50000:$0.7110
    BSC016N06NS
    DISTI # 726-BSC016N06NS    		Infineon Technologies AGMOSFET N-Ch 60V 100A DSON-8 OptiMOS
    RoHS: Compliant    		143
    • 1:$2.0600
    • 10:$1.7500
    • 100:$1.4000
    • 500:$1.2300
    • 1000:$1.0200
    BSC016N06NSATMA1
    DISTI # 726-BSC016N06NSATMA1    		Infineon Technologies AGMOSFET N-Ch 60V 100A DSON-8 OptiMOS
    RoHS: Compliant    		0
    • 1:$2.0600
    • 10:$1.7500
    • 100:$1.4000
    • 500:$1.2300
    • 1000:$1.0200
    BSC016N06NSATMA1
    DISTI # 2432702    		Infineon Technologies AGMOSFET, N CH, 60V, 100A, TDSON-8
    RoHS: Compliant    		0
    • 1:£1.8900
    • 10:£1.4900
    • 100:£1.2000
    • 250:£1.1200
    • 500:£1.1000
    BSC016N06NSATMA1
    DISTI # 2432702    		Infineon Technologies AGMOSFET, N CH, 60V, 100A, TDSON-8
    RoHS: Compliant    		0
    • 1:$3.2600
    • 10:$2.7800
    • 100:$2.3300
    BSC016N06NSATMA1
    DISTI # 2432702RL    		Infineon Technologies AGMOSFET, N CH, 60V, 100A, TDSON-8
    RoHS: Compliant    		0
    • 1:$3.2600
    • 10:$2.7800
    • 100:$2.3300
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    可用性
    庫存:
    17
    訂購:
    2000
    輸入數量:
    BSC016N06NSATMA1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$2.06
    US$2.06
    10
    US$1.75
    US$17.50
    100
    US$1.40
    US$140.00
    500
    US$1.22
    US$610.00
    1000
    US$1.01
    US$1 010.00
    由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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