AUIRFS4010TRL

Mfr. #:: AUIRFS4010TRL
製造商:: Infineon / IR
描述:: MOSFET 100V 170A 4.7 mOhm Automotive MOSFET
生命週期:: 製造商新產品
數據表:: AUIRFS4010TRL 數據表
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ECAD Model:

產品屬性
屬性值

製造商：: 英飛凌

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: TO-252-3

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 100 V

Id - 連續漏極電流：: 180 A

Rds On - 漏源電阻：: 4.7 mOhms

Vgs th - 柵源閾值電壓：: 4 V

Vgs - 柵源電壓：: 20 V

Qg - 門電荷：: 143 nC

最低工作溫度：: - 55 C

最高工作溫度：: + 175 C

Pd - 功耗：: 375 W

配置：: 單身的

資質：: AEC-Q101

打包：: 捲軸

高度：: 2.3 mm

長度：: 6.5 mm

晶體管類型：: 1 N-Channel

寬度：: 6.22 mm

品牌：: 英飛凌/紅外

正向跨導 - 最小值：: 189 S

秋季時間：: 77 ns

產品類別：: MOSFET

上升時間：: 86 ns

出廠包裝數量：: 800

子類別：: MOSFET

典型關斷延遲時間：: 100 ns

典型的開啟延遲時間：: 21 ns

第 # 部分別名：: SP001520712

單位重量：: 0.139332 oz

Tags: AUIRFS4010TRL, AUIRFS4010T, AUIRFS40, AUIRFS4, AUIRFS, AUIRF, AUIR, AUI

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

AUIRFS4010TRL 描述

***(Formerly Allied Electronics): AUIRFS4010 N-channel MOSFET Transistor; 180 A; 100 V; 3-Pin D2PAK

***ical: Trans MOSFET N-CH Si 100V 180A Automotive 3-Pin(2+Tab) D2PAK Tube

***ernational Rectifier: Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-PAK Package

***ment14 APAC: MOSFET, N-CH, 100V, 180A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0039ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:375W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***ineon SCT: Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area, D2PAK-3, RoHS

***ineon: Benefits: Advanced Process Technology; Ultra Low On-Resistance; 175C Operating Temperature; Fast Switching; Repetitive Avalanche Allowed up to Tjmax; Lead-Free, RoHS Compliant; Automotive Qualified

***-Tronics LLC (USA): Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 100V 180A D2PAK

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ure Electronics: Single N-Channel 100 V 4.7 mOhm 143 nC HEXFET® Power Mosfet - D2PAK

***ment14 APAC: MOSFET, N-CH, 100V, 180A, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Source Voltage Vds:100V; On Resistance

***roFlash: Power Field-Effect Transistor, 180A I(D), 100V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, N-CH, 100V, 180A, TO-263AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 180A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0039ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 375W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***et: Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R

***ark: N CH POWER MOSFET, HEXFET, 100V, 180A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(on):3.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: Yes

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***et: Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK Tube

***C: MOSFET N-CH 100V 180A D2PAK MOSFET N-CH 100V 180A D2PAK

***(Formerly Allied Electronics): MOSFET, 100V, 180A, 4.7MOHM, 143NC QG, D2PAK

***ark: HEXFET Power MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:180A; On Resistance, Rds(on):3.9mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:3-D2PAK ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N-CH, 100V, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(on):3.9mohm; Rds(on) Test Voltage Vgs:20V; Power Dissipation Pd:375W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:9575pF; Current Id Max:180A; Package / Case:D2-PAK; Power Dissipation Pd:375W; Power Dissipation Pd:375W; Pulse Current Idm:720A; Reverse Recovery Time trr Typ:72ns; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

***ure Electronics: FDB035N10 Series 100 V 214 A 3.5 mOhm N-Channel SuperFET® MOSFET - D2PAK-3

***Yang: Trans MOSFET N-CH 100V 214A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel

***emi: N-Channel PowerTrench® MOSFET 100V, 214A, 3.5mΩ

***ment14 APAC: MOSFET, N-CH, 214A, 100V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:214A; Source Voltage Vds:100V; On Resistance

***r Electronics: Power Field-Effect Transistor, 120A I(D), 100V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

***nell: MOSFET, N-CH, 214A, 100V, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 214A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.003ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 333W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***icroelectronics: N-channel 100 V, 3.9 mOhm typ., 180 A STripFET F3 Power MOSFET in H2PAK-2 package

***et: Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) H2PAK T/R

***ponent Stockers USA: 180 A 100 V 0.004 ohm N-CHANNEL Si POWER MOSFET

***ark: MOSFET, N CH, 100V, 180A, H2PAK-2; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:180A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 180A I(D), 100V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ow.cn: STH180N10F3-2 STMicroelectronics Transistors MOSFETs N-CH 100V 180A 3-Pin(2+Tab) H2PAK T/R - Arrow.com

***icroelectronics SCT: Power MOSFETs, 100V, 180A, H2PAK-2, Tape and Reel

***ineon SCT: Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS

***ical: Trans MOSFET N-CH Si 100V 180A Automotive 3-Pin(2+Tab) D2PAK T/R

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, N-CH, 100V, 180A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0034ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:370W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C

***ineon: Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Exhaust

***(Formerly Allied Electronics): IRFS7734PBF N-channel MOSFET Transistor; 183 A; 75 V; 3-Pin D2PAK

***ineon SCT: 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***roFlash: Single N-Channel 75 V 3.5 mOhm 180 nC HEXFET¬Æ Power Mosfet - D2PAK

***ark: TUBE / MOSFET, 75V, 183A, 3.5 Ohm, 180 nC, D2PAK

***nell: MOSFET, N-CH, 75V, 183A, TO-263AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 183A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0028ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V;

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-263 Polarity: N Variants: Enhancement mode Power dissipation: 290 W

*** Stop Electro: Power Field-Effect Transistor, 183A I(D), 75V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ineon: Benefits: Improved gate, avalanche and dynamic dV/dt ruggedness; Fully characterized capacitance and avalanche SOA; Enhanced body diode dV/dt and dI/dt capability; Lead-free, RoHS compliant; StrongIRFET

***ical: Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R

***emi: Power MOSFET, 100V, 2.8mΩ, 180A, N-Channel

***r Electronics: Power Field-Effect Transistor, 100A I(D), 100V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***icroelectronics: N-channel 100 V, 1.9 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-2 package

***ure Electronics: N-Channel 100 V 2.3 mOhm STripFET VII DeepGATE Power Mosfet-H2PAK-2

***ark: MOSFET, N-CH, 100V, 180A, H2PAK-2; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:180A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V RoHS Compliant: Yes

Market price

型號	製造商	描述	庫存	價格
AUIRFS4010TRL DISTI # AUIRFS4010TRL	Infineon Technologies AG	Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: AUIRFS4010TRL) RoHS: Compliant Min Qty: 800 Container: Reel	Americas - 0	800:$2.4900 1600:$2.3900 3200:$2.2900 4800:$2.1900 8000:$2.1900
AUIRFS4010TRL DISTI # 942-AUIRFS4010TRL	Infineon Technologies AG	MOSFET 100V 170A 4.7 mOhm Automotive MOSFET RoHS: Compliant	469	1:$4.6800 10:$3.9800 100:$3.4500 250:$3.2700 500:$2.9400 800:$2.4800 2400:$2.3500

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