FCP125N60E

FCP125N60E
Mfr. #:
FCP125N60E
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET 600V 29A N-Chnl SuperFET Easy-Drive
生命週期:
製造商新產品
數據表:
FCP125N60E 數據表
交貨:
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支付:
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ECAD Model:
更多信息:
FCP125N60E 更多信息
產品屬性
屬性值
製造商:
安森美半導體
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
通孔
包裝/案例:
TO-220-3
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
600 V
Id - 連續漏極電流:
29 A
Rds On - 漏源電阻:
125 mOhms
Vgs th - 柵源閾值電壓:
2.5 V
Vgs - 柵源電壓:
20 V, 30 V
Qg - 門電荷:
75 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
Pd - 功耗:
278 W
配置:
單身的
頻道模式:
增強
商品名:
超級場效應晶體管 II
打包:
管子
高度:
16.3 mm
長度:
10.67 mm
系列:
FCP125N60E
晶體管類型:
1 N-Channel
寬度:
4.7 mm
品牌:
安森美半導體/飛兆半導體
正向跨導 - 最小值:
25 S
秋季時間:
23 ns
產品類別:
MOSFET
上升時間:
20 ns
出廠包裝數量:
800
子類別:
MOSFET
典型關斷延遲時間:
106 ns
典型的開啟延遲時間:
23 ns
單位重量:
0.063493 oz
Tags
FCP125, FCP12, FCP1, FCP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 29 A, 125 mΩ, TO-220
***ical
Trans MOSFET N-CH 600V 19A 3-Pin(3+Tab) TO-220
***et
Trans MOSFET N-CH 600V 29A 3-Pin TO-220 Tube
***i-Key
MOSFET N-CH 600V TO220
***et Europe
SUPERFET2 600V 125OHM SLOW VERSION
***ark
MOSFET, N-CH, 600V, 29A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.102ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power RoHS Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 29A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.102ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:278W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:SuperFET II Series; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018)
***nell
MOSFET, CAN-N, 600V, 29A, TO-220-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:29A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.102ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:278W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:SuperFET II Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018)
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.Consequently, SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET IIMOSFET series. Noted by the “E” part number suffix, this family helps manage EMI issues and allows for easier designimplementation. For faster switching in applications where switching losses must be at an absolute minimum, pleaseconsider the SuperFET II MOSFET series.
SuperFET® II Power MOSFETs
ON Semiconductor SuperFET® II Power MOSFETs are a new proprietary generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. These SuperFET® II MOSFETs are suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.Learn More
型號 製造商 描述 庫存 價格
FCP125N60E
DISTI # V99:2348_14141718
ON SemiconductorSUPERFET2 600V 125OHM SLOW VER490
  • 5000:$1.7280
  • 2500:$1.7560
  • 1000:$1.8170
  • 500:$1.9930
  • 250:$2.2439
  • 100:$2.3830
  • 10:$2.7780
  • 1:$3.6278
FCP125N60E
DISTI # V36:1790_14141718
ON SemiconductorSUPERFET2 600V 125OHM SLOW VER0
  • 800000:$1.4620
  • 400000:$1.4640
  • 80000:$1.7010
  • 8000:$2.1180
  • 800:$2.1870
FCP125N60E
DISTI # FCP125N60E-ND
ON SemiconductorMOSFET N-CH 600V 29A TO220
RoHS: Compliant
Min Qty: 800
Container: Tube
Temporarily Out of Stock
  • 800:$2.1871
FCP125N60E
DISTI # 25887487
ON SemiconductorSUPERFET2 600V 125OHM SLOW VER490
  • 4:$3.6278
FCP125N60E
DISTI # FCP125N60E
ON SemiconductorSUPERFET2 600V 125OHM SLOW VERSION - Rail/Tube (Alt: FCP125N60E)
RoHS: Compliant
Min Qty: 800
Container: Tube
Americas - 0
  • 4800:$1.4900
  • 8000:$1.4900
  • 800:$1.5900
  • 1600:$1.5900
  • 3200:$1.5900
FCP125N60E
DISTI # FCP125N60E
ON SemiconductorSUPERFET2 600V 125OHM SLOW VERSION - Bulk (Alt: FCP125N60E)
Min Qty: 168
Container: Bulk
Americas - 0
  • 840:$1.7900
  • 1680:$1.7900
  • 168:$1.8900
  • 336:$1.8900
  • 504:$1.8900
FCP125N60E
DISTI # 512-FCP125N60E
ON SemiconductorMOSFET 600V 29A N-Chnl SuperFET Easy-Drive
RoHS: Compliant
1048
  • 1:$3.3200
  • 10:$2.8200
  • 100:$2.4400
  • 250:$2.3200
  • 500:$2.0800
  • 1000:$1.7500
  • 2500:$1.6600
  • 5000:$1.6000
FCP125N60EFairchild Semiconductor Corporation 
RoHS: Not Compliant
642
  • 1000:$1.8300
  • 500:$1.9300
  • 100:$2.0000
  • 25:$2.0900
  • 1:$2.2500
FCP125N60E
DISTI # 2565217
ON SemiconductorMOSFET, N-CH, 600V, 29A, TO-220-3
RoHS: Compliant
706
  • 1600:$3.8900
  • 800:$4.1700
  • 100:$5.6900
  • 10:$6.9500
  • 1:$7.7900
FCP125N60E
DISTI # 2565217
ON SemiconductorMOSFET, N-CH, 600V, 29A, TO-220-3707
  • 500:£1.4300
  • 250:£1.5900
  • 100:£1.6700
  • 10:£1.9400
  • 1:£2.5700
圖片 型號 描述
UCC28180DR

Mfr.#: UCC28180DR

OMO.#: OMO-UCC28180DR

Power Factor Correction - PFC 8-PIN CCM PFC CONTROLLER
MBR140SFT1G

Mfr.#: MBR140SFT1G

OMO.#: OMO-MBR140SFT1G

Schottky Diodes & Rectifiers 1A 40V
C3D04060E

Mfr.#: C3D04060E

OMO.#: OMO-C3D04060E

Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 600V, 4A
HSS-B20-CP-01

Mfr.#: HSS-B20-CP-01

OMO.#: OMO-HSS-B20-CP-01

Heat Sinks 18.79 x 22.86x9.52mm clip
65600001009

Mfr.#: 65600001009

OMO.#: OMO-65600001009-LITTELFUSE

Fuse Holder 5 X 20MM FUSE BLOCK
PV36W103C01B00

Mfr.#: PV36W103C01B00

OMO.#: OMO-PV36W103C01B00-BOURNS

Trimmer Resistors - Through Hole 10Kohms 10mm Square 25turn
885342211003

Mfr.#: 885342211003

OMO.#: OMO-885342211003-WURTH-ELECTRONICS

Multilayer Ceramic Capacitors MLCC - SMD/SMT WCAP-CSMH 250V 0.47uF 1812 10%
HSS-B20-CP-01

Mfr.#: HSS-B20-CP-01

OMO.#: OMO-HSS-B20-CP-01-CUI

HEATSINK TO-220 2.6W ALUMINUM
C4532X7R2J104K230KA

Mfr.#: C4532X7R2J104K230KA

OMO.#: OMO-C4532X7R2J104K230KA-TDK

Multilayer Ceramic Capacitors MLCC - SMD/SMT 1812 0.1uF 630volts X7R 10%
C3D04060E

Mfr.#: C3D04060E

OMO.#: OMO-C3D04060E-WOLFSPEED

Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 600V, 4A
可用性
庫存:
Available
訂購:
1984
輸入數量:
FCP125N60E的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$3.32
US$3.32
10
US$2.82
US$28.20
100
US$2.44
US$244.00
250
US$2.32
US$580.00
500
US$2.08
US$1 040.00
1000
US$1.75
US$1 750.00
2500
US$1.66
US$4 150.00
5000
US$1.60
US$8 000.00
由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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