MRFE6VP8600HSR5

Mfr. #:: MRFE6VP8600HSR5
製造商:: NXP / Freescale
描述:: RF MOSFET Transistors VHV6 600W NI1230S 50V
生命週期:: 製造商新產品
數據表:: MRFE6VP8600HSR5 數據表
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ECAD Model:

產品屬性
屬性值

製造商：: 恩智浦

產品分類：: 射頻 MOSFET 晶體管

RoHS：: Y

晶體管極性：: N通道

技術：: 矽

Vds - 漏源擊穿電壓：: 140 V

獲得：: 18.8 dB

輸出功率：: 600 W

最高工作溫度：: + 150 C

安裝方式：: 貼片/貼片

包裝/案例：: NI-1230S

打包：: 捲軸

配置：: 雙重的

工作頻率：: 470 MHz to 860 MHz

系列：: MRFE6VP8600H

類型：: 射頻功率MOSFET

品牌：: 恩智浦/飛思卡爾

正向跨導 - 最小值：: 15.6 S

Pd - 功耗：: 1.52 kW

產品類別：: 射頻 MOSFET 晶體管

出廠包裝數量：: 50

子類別：: MOSFET

Vgs - 柵源電壓：: 10 V

Vgs th - 柵源閾值電壓：: 2.07 V

第 # 部分別名：: 935310858178

單位重量：: 0.467870 oz

Tags: MRFE6VP8, MRFE6VP, MRFE6V, MRFE6, MRFE, MRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MRFE6VP8600HSR5 描述

***W: RF Power Transistor,470 to 860 MHz, 600 W, Typ Gain in dB is 19.3 @ 860 MHz, 50 V, LDMOS, SOT1829

***ical: Trans RF MOSFET N-CH 130V 5-Pin Case 375E-04 T/R

***ark: Rf Fet, 130V, 1.052Kw, Ni-1230S Rohs Compliant: Yes

*** Electronic Components: RF MOSFET Transistors VHV6 600W NI1230S 50V

***el Electronic: LED DRVR 3Segment 3.3V/5V 14-Pin TSSOP T/R

***i-Key: FET RF 2CH 130V 860MHZ NI1230S

***W: RF Power Transistor,1.8 to 600 MHz, 300 W, Typ Gain in dB is 25 @ 130 MHz, 50 V, LDMOS, SOT1827

***escale Semiconductor: Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V

*** Stop Electro: RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

***nell: RF FET, 1.8MHZ-600MHZ, NI-780S; Drain Source Voltage Vds: 130V; Continuous Drain Current Id: -; Power Dissipation Pd: 1.05kW; Operating Frequency Min: 1.8MHz; Operating Frequency Max: 600MHz; RF Transistor Case: NI-780S; No. of Pins: 4Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)

***(Formerly Allied Electronics): IRLL110TRPBF N-channel MOSFET Transistor; 1.5 A; 100 V; 3 + Tab-Pin SOT-223

***eco: Trans MOSFET N Channel 100 Volt 1.5A 4-Pin (3+Tab) SOT-223 Tape and Reel

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - SOT-223-3

*** Source Electronics: Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 100V 1.5A SOT223

***nsix Microsemi: Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

***hard Electronics: Mosfet; Power; N-ch; Vdss 100V; Rds(on) 0.54 Ohm; Id 4.3A; TO-252AA; Pd 25W; Vgs +/-10V

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ark: N Channel Mosfet, 100V, 4.3A, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V Rohs Compliant: No

***ment14 APAC: MOSFET, N, 100V, 4.3A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):540mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:25W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:4.3A; Junction to Case Thermal Resistance A:5°C/W; On State resistance @ Vgs = 10V:540mohm; Package / Case:DPAK; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Pulse Current Idm:17A; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V

***ark: Wideband Rf Power Ldmos Transistor, 1.8-600 Mhz, 1250 W Cw, 50 V Rohs Compliant: Yes

***W: RF Power Transistor,1.8 to 600 MHz, 1250 W, Typ Gain in dB is 22.9 @ 230 MHz, 50 V, LDMOS, SOT1787

***-Wing Technology: Tape & Reel (TR) N-CHANNEL EAR99 MRFE6VP61K25 RF Mosfet 100mA 1250W 24dB 230MHz

***ure Electronics: MRFE6VP6x Series 133 V RF 230 MHz Dual Channel Power LDMOS Transistor - NI-1230

***nell: TRANSISTOR, RF, 133V, NI-1230H-4S; Drain Source Voltage Vds: 133VDC; Continuous Drain Current Id: -; Power Dissipation Pd: 1.333kW; Operating Frequency Min: 1.8MHz; Operating Frequency Max: 600MHz; RF Transistor Case: NI-1230;

***W: RF Power Transistor,1.8 to 600 MHz, 300 W, Typ Gain in dB is 25 @ 130 MHz, 50 V, LDMOS, SOT1827

*** Semiconductors SCT: Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V, CFM4F, RoHS

***ark: RF POWER FET, N CH, 125V, NI-780-4; Transistor Type:RF MOSFET; Drain Source Voltage Vds:125V; Continuous Drain Current Id:100mA; Power Dissipation Pd:300W; Operating Frequency Min:1.8MHz; Operating Frequency Max:600MHz; No. of Pins:4;RoHS Compliant: Yes

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252

***ical: Trans MOSFET N-CH 100V 4.3A 3-Pin(2+Tab) DPAK T/R

***ment14 APAC: MOSFET, N-CH, 100V, 4.3A, TO-252AA

*** Services: CoC and 2-years warranty / RFQ for pricing

***S: French Electronic Distributor since 1988

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V; Threshold Voltage Vgs:2V; Product Range:- Rohs Compliant: No

Market price

型號	製造商	描述	庫存	價格
MRFE6VP8600HSR5 DISTI # 25967845	NXP Semiconductors	Trans RF MOSFET N-CH 130V 5-Pin Case 375E-04 T/R	309	1:$252.0000
MRFE6VP8600HSR5 DISTI # MRFE6VP8600HSR5TR-ND	NXP Semiconductors	FET RF 2CH 130V 860MHZ NI1230S RoHS: Compliant Min Qty: 50 Container: Tape & Reel (TR)	Temporarily Out of Stock	50:$253.8838
MRFE6VP8600HSR5 DISTI # MRFE6VP8600HSR5	Avnet, Inc.	VHV6 600W 50V NI1230S - Tape and Reel (Alt: MRFE6VP8600HSR5) RoHS: Compliant Min Qty: 50 Container: Reel	Americas - 0	50:$278.1900 100:$267.2900 200:$256.8900 300:$247.4900 500:$242.7900
MRFE6VP8600HSR5 DISTI # 841-MRFE6VP8600HSR5	NXP Semiconductors	RF MOSFET Transistors VHV6 600W NI1230S 50V RoHS: Compliant	36	1:$279.2100 5:$272.9800 10:$267.3900 25:$263.4500 50:$253.8800
MRFE6VP8600HSR5 DISTI # MRFE6VP8600HSR5	NXP Semiconductors	RF POWER TRANSISTOR RoHS: Compliant	22	1:$263.1200 10:$256.1900 25:$252.8700

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