IGW40N65H5FKSA1

Mfr. #:: IGW40N65H5FKSA1
製造商:: Infineon Technologies
描述:: IGBT Transistors IGBT PRODUCTS
生命週期:: 製造商新產品
數據表:: IGW40N65H5FKSA1 數據表
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更多信息:: IGW40N65H5FKSA1 更多信息

產品屬性
屬性值

製造商: 英飛凌科技

產品分類: IGBT - 單

系列: 戰壕止損

打包: 管子

部分別名: IGW40N65H5 SP001001742

單位重量: 1.340411 oz

安裝方式: 通孔

包裝盒: TO-247-3

輸入類型: 標準

安裝型: 通孔

供應商-設備-包: PG-TO247-3

配置: 單身的

最大功率: 255W

反向恢復時間trr: -

電流收集器 Ic-Max: 74A

電壓收集器發射極擊穿最大值: 650V

IGBT型: -

電流收集器脈衝Icm: 120A

Vce-on-Max-Vge-Ic: 2.1V @ 15V, 40A

開關能源: 390μJ (on), 120μJ (off)

柵極電荷: 95nC

Td-on-off-25°C: 22ns/165ns

測試條件: 400V, 20A, 15 Ohm, 15V

鈀功耗: 255 W

最高工作溫度: + 175 C

最低工作溫度: - 40 C

集電極-發射極-電壓-VCEO-Max: 650 V

集電極-發射極-飽和-電壓: 1.6 V

25-C 時的連續集電極電流: 74 A

柵極-發射極-漏電流: 100 nA

最大柵極發射極電壓: 20 V

連續集電極電流 Ic-Max: 46 A

Tags: IGW40N65H, IGW40N65, IGW40N6, IGW40N, IGW40, IGW4, IGW

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IGW40N65H5FKSA1 描述

***ical: Trans IGBT Chip N-CH 650V 74A 255000mW 3-Pin(3+Tab) TO-247 Tube

***p One Stop Global: Trans IGBT Chip N-CH 650V 74A 3-Pin(3+Tab) TO-247 Tube

***et Europe: Trans IGBT Chip N-CH 650V 74A 3-Pin TO-247 Tube

***i-Key: IGBT 650V 74A 255W PG-TO247-3

***ronik: IGBT 650V 40A 1.65V TO247-3

***ark: IGBT, 650V, 40A, TO247-3

***ukat: 650V 74A 255W TO247

***ment14 APAC: Prices include import duty and tax. IGBT, 650V, 40A, TO247-3; DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:255W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:TRENCHSTOP 5 Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-40°C; Transistor Type:IGBT

***nell: IGBT, 650V, 40A, TO247-3; Corrente di Collettore CC:40A; Tensione Saturaz Collettore-Emettitore Vce(on):1.65V; Dissipazione di Potenza Pd:255W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TRENCHSTOP 5 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Temperatura di Esercizio Min:-40°C; Tipo di Transistor:IGBT

***ineon: Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons Best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding

IGW40N65H5FKSA1 更多信息

TRENCHSTOP™ 5 IGBTs: Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.

TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs: Infineon TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs are high speed and designed with ultimate efficiency for applications switching faster than 30kHz. The High Speed 5 IGBTs feature TRENCHSTOP™ 5 technology and are co-packed with a RAPID 1 fast and soft antiparallel diode. The H5 IGBTs offer best-in-class efficiency in hard switching and resonant topologies and are a plug-and-play replacement for previous generation IGBTs. Typical applications include UPS, welding converters, solar string inverters, and mid to high range switching frequency converters.

Market price

型號	製造商	描述	庫存	價格
IGW40N65H5FKSA1 DISTI # V99:2348_06377723	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 74A 255000mW 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	235	500:$2.1629 250:$2.4009 100:$2.5110 10:$2.8300 1:$3.5464
IGW40N65H5FKSA1 DISTI # IGW40N65H5FKSA1-ND	Infineon Technologies AG	IGBT 650V 74A 255W PG-TO247-3 RoHS: Compliant Min Qty: 1 Container: Tube	85In Stock	2640:$1.9424 720:$2.4182 240:$2.8407 25:$3.2776 10:$3.4670 1:$3.8600
IGW40N65H5FKSA1 DISTI # 26197292	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 74A 255000mW 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	235	500:$2.1629 250:$2.4009 100:$2.5110 10:$2.8300 4:$3.2240
IGW40N65H5FKSA1 DISTI # IGW40N65H5FKSA1	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 74A 3-Pin TO-247 Tube - Bulk (Alt: IGW40N65H5FKSA1) Min Qty: 209 Container: Bulk	Americas - 0	1045:$1.4900 2090:$1.4900 418:$1.5900 627:$1.5900 209:$1.6900
IGW40N65H5FKSA1 DISTI # IGW40N65H5FKSA1	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 74A 3-Pin TO-247 Tube - Rail/Tube (Alt: IGW40N65H5FKSA1) RoHS: Compliant Min Qty: 240 Container: Tube	Americas - 0	1440:$1.6900 2400:$1.6900 960:$1.7900 240:$1.8900 480:$1.8900
IGW40N65H5FKSA1 DISTI # SP001001742	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 74A 3-Pin TO-247 Tube (Alt: SP001001742) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1000:€1.4400 500:€1.7900 250:€1.9900 100:€2.1000 10:€2.4200 1:€2.8500
IGW40N65H5 DISTI # 726-IGW40N65H5-ES	Infineon Technologies AG	IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT RoHS: Compliant	166	1:$3.6700 10:$3.1200 100:$2.7000 250:$2.5600 500:$2.3000
IGW40N65H5FKSA1 DISTI # 726-IGW40N65H5FKSA1	Infineon Technologies AG	IGBT Transistors IGBT PRODUCTS RoHS: Compliant	242	1:$3.6700 10:$3.1200 100:$2.7000 250:$2.5600 500:$2.3000
IGW40N65H5FKSA1	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 74A I(C), 650V V(BR)CES, N-Channel RoHS: Compliant	4560	1000:$1.5800 500:$1.6600 100:$1.7300 25:$1.8100 1:$1.9400
IGW40N65H5FKSA1 DISTI # IGW40N65H5FKSA1	Infineon Technologies AG	Transistor: IGBT,650V,74A,250W,TO247-3,Series: H5	42	1:$3.4700 3:$3.0000 10:$2.4100 30:$2.1700
IGW40N65H5FKSA1 DISTI # 2363278	Infineon Technologies AG	IGBT, 650V, 40A, TO247-3 RoHS: Compliant	0	500:£1.8000 250:£2.0000 100:£2.1000 10:£2.4300 1:£3.2000
IGW40N65H5FKSA1 DISTI # IGW40N65H5	Infineon Technologies AG	650V 74A 255W TO247 RoHS: Compliant	144	1:€5.5000 10:€2.5000 50:€1.5000 100:€1.4500

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