MR25H128ACDFR

Mfr. #:: MR25H128ACDFR
製造商:: Everspin Technologies
描述:: NVRAM 128Kb 3.3V 16Kx8 SPI
生命週期:: 製造商新產品
數據表:: MR25H128ACDFR 數據表
交貨:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:: MR25H128ACDFR 更多信息

產品屬性
屬性值

製造商：: 恆旋科技

產品分類：: NVRAM

RoHS：: Y

包裝/案例：: DFN-8

系列：: MR25H128A

打包：: 捲軸

品牌：: 恆旋科技

濕氣敏感：: 是的

產品類別：: NVRAM

出廠包裝數量：: 4000

子類別：: 內存和數據存儲

Tags: MR25H12, MR25H1, MR25H, MR25, MR2

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MR25H128ACDFR 更多信息

Serial SPI MRAMs: Everspin Technologies MR25H256 / MR25H10 /MRH25H128 / MR25H40 SPI Serial MRAM devices offer serial EEPROM and serial Flash compatible read/write timing with no write delays and unlimited read/write endurance. Unlike other serial memories, both reads and writes can occur randomly in memory with no delay between writes.

Magnetoresistive Random Access Memory (MRAM): Everspin Technologies Magnetoresistive Random Access Memory (MRAM) uses a 1 Transistor – 1 Magnetic Tunnel Junction (1T-1MTJ) architecture. These MRAM devices offer significantly long Data Retention (20+ years) and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.

Everspin MRAM

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