IKQ40N120CH3XKSA1

Mfr. #:: IKQ40N120CH3XKSA1
製造商:: Infineon Technologies
描述:: IGBT Transistors IGBT PRODUCTS
生命週期:: 製造商新產品
數據表:: IKQ40N120CH3XKSA1 數據表
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ECAD Model:

產品屬性
屬性值

製造商：: 英飛凌

產品分類：: IGBT晶體管

RoHS：: Y

技術：: 矽

包裝/案例：: TO247-3-46

安裝方式：: 通孔

配置：: 單身的

集電極-發射極電壓 VCEO 最大值：: 1200 V

集電極-發射極飽和電壓：: 2 V

最大柵極發射極電壓：: 20 V

25 C 時的連續集電極電流：: 80 A

Pd - 功耗：: 500 W

最低工作溫度：: - 40 C

最高工作溫度：: + 175 C

打包：: 管子

連續集電極電流 Ic 最大值：: 80 A

品牌：: 英飛凌科技

柵極-發射極漏電流：: 100 nA

產品類別：: IGBT晶體管

出廠包裝數量：: 240

子類別：: IGBT

第 # 部分別名：: IKQ40N120CH3 SP001272706

單位重量：: 0.211644 oz

Tags: IKQ4, IKQ

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IKQ40N120CH3XKSA1 描述

***Components: In a Tube of 30, Infineon IKQ40N120CH3XKSA1 P-Channel IGBT, 80 A 1200 V, 3-Pin TO-247

***et Europe: High speed switching series third generation IGBT

***i-Key: IGBT HS SW 1200V 40A TO-247-3

***ark: Igbt, 1.2Kv, 80A, 500W, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):2V; Power Dissipation Pd:500W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. IGBT, 1.2KV, 80A, 500W, TO-247; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):2V; Power Dissipation Pd:500W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: IGBT, 1.2KV, 80A, 500W, TO-247; Corrente di Collettore CC:80A; Tensione Saturaz Collettore-Emettitore Vce(on):2V; Dissipazione di Potenza Pd:500W; Tensione Collettore-Emettitore V(br)ceo:1.2kV; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: Responding to the market requirement to accommodate ever increasing amounts of silicon in smaller, space saving packages, Infineon introduces the new package TO-247PLUS for 1200V IGBT. Higher current capability, improved thermal behaviour. The TO-247PLUS has the same outer dimensions as the industry standard TO-247, but due to the absence of the screw hole, allows up to 75A in 1200V co-packed with full rated 75A diode. | Summary of Features: High power density up to 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint; 20% lower R th(jh) compared to TO-247 3 pin; Extended collector-emitter pin creepage of 4.25 mm; Extended clip creepage due to fully encapsulated front side of the package | Benefits: Higher system power density I c increase keeping the same system thermal performance; Lower thermal resistance R th(jh) and improved by ~15% heat dissipation capability of TO-247PLUS vs TO-247; Higher reliability, extended lifetime of the device | Target Applications: Uninterruptable power suppliers (UPS); Battery Charger; Energy storage; Portable welding converter

Market price

型號	製造商	描述	庫存	價格
IKQ40N120CH3XKSA1 DISTI # IKQ40N120CH3XKSA1-ND	Infineon Technologies AG	IGBT HS SW 1200V 40A TO-247-3 RoHS: Compliant Min Qty: 1 Container: Tube	191In Stock	720:$6.3015 240:$7.2366 25:$8.3344 10:$8.7410 1:$9.6800
IKQ40N120CH3XKSA1 DISTI # IKQ40N120CH3XKSA1	Infineon Technologies AG	High speed switching series third generation IGBT - Rail/Tube (Alt: IKQ40N120CH3XKSA1) RoHS: Compliant Min Qty: 240 Container: Tube	Americas - 0	2400:$4.8900 1440:$4.9900 960:$5.0900 480:$5.2900 240:$5.4900
IKQ40N120CH3XKSA1 DISTI # SP001272706	Infineon Technologies AG	High speed switching series third generation IGBT (Alt: SP001272706) RoHS: Compliant Min Qty: 1	Europe - 0	1000:€3.9900 500:€4.2900 100:€4.4900 50:€4.5900 25:€4.7900 10:€4.9900 1:€5.4900
IKQ40N120CH3XKSA1 DISTI # 93AC7069	Infineon Technologies AG	IGBT, 1.2KV, 80A, 500W, TO-247,DC Collector Current:80A,Collector Emitter Saturation Voltage Vce(on):2V,Power Dissipation Pd:500W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes	170	500:$6.0600 250:$6.6500 100:$6.9600 50:$7.4800 25:$8.0100 10:$8.4000 1:$9.3000
IKQ40N120CH3XKSA1 DISTI # 726-IKQ40N120CH3XKSA	Infineon Technologies AG	IGBT Transistors IGBT PRODUCTS RoHS: Compliant	968	1:$9.2100 10:$8.3200 25:$7.9300 100:$6.8900 250:$6.5800 500:$6.0000
IKQ40N120CH3XKSA1 DISTI # 1623286	Infineon Technologies AG	IGBT 1200V 40A HIGHSPEED3 DIODE TO-247, TU	106	600:£4.0310 300:£4.3190 150:£4.6510 30:£5.0390
IKQ40N120CH3XKSA1 DISTI # 2986434	Infineon Technologies AG	IGBT, 1.2KV, 80A, 500W, TO-247	240	100:£5.0000 50:£5.3800 10:£5.7500 5:£6.6700 1:£7.2000
IKQ40N120CH3XKSA1 DISTI # 2986434	Infineon Technologies AG	IGBT, 1.2KV, 80A, 500W, TO-247 RoHS: Compliant	170	100:$7.3000 250:$7.3000 50:$8.8600 10:$9.0300 5:$9.7300 1:$10.8000

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